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STMicroelectronics LET9060TR
- Part No.:
- LET9060TR
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet:
-
LET9060TR.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:8,612
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Product details
Overview
LET9060TR from STMicroelectronics is a 60 W N-channel enhancement-mode lateral MOSFET in PowerSO-10RF (formed lead) package, operating at 28 V with 17.2 dB gain at 960 MHz and 60% drain efficiency. It serves as a high-power RF amplifier stage in base station transmitters, delivering broadband performance up to 1 GHz with 20:1 load mismatch tolerance.
For engineers reviewing the LET9060TR datasheet, LET9060TR pinout, LET9060TR application, or LET9060TR equivalent, key selection criteria include its 80 V V(BR)DSS rating, 1.0 °C/W junction-case thermal resistance, 77 pF Ciss, common-source configuration, and suitability for industrial RF power amplification requiring stable gain linearity and SMD assembly compatibility.
Technical Context
The LET9060TR employs ST's LDMOS technology optimized for RF power amplification in common-source topology. Its static characteristics include VGS(Q) = 2.0–5.0 V at ID = 100 mA and VDS(ON) = 0.8–1.2 V at VGS = 10 V/ID = 3 A, supporting precise gate biasing and low conduction loss.
Dynamic operation is characterized by POUT = 60 W at 960 MHz under 28 V supply and 300 mA quiescent drain current, achieving GPS = 17.2 dB and ηD = 70% peak drain efficiency. The device maintains robust RF performance across full 360° phase-angle load mismatch up to 20:1 VSWR.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 80 V - Withstands transient voltage spikes up to 80 V without breakdown in drain-source path. |
| POUT @ 960 MHz | 60 W - Delivers 60 W RF output power into 50 Ω load at 960 MHz under standard test conditions. |
| GPS @ 960 MHz | 17.2 dB - Provides 52× voltage gain, enabling compact driver-stage design in multi-stage amplifiers. |
| ηD @ 960 MHz | 70 % - Achieves high DC-to-RF conversion efficiency, reducing thermal load and heatsink requirements. |
| RthJC | 1.0 °C/W - Enables direct thermal coupling to heatsink with minimal temperature rise per watt dissipated. |
| Ciss | 77 pF - Defines input capacitance affecting matching network design and stability at UHF frequencies. |
| Load Mismatch | 20:1 VSWR - Tolerates severe impedance mismatches without damage, critical for antenna-coupled base station PA stages. |
Pinout & Package
LET9060TR is housed in PowerSO-10RF (formed lead) plastic package - ST's first JEDEC-approved high-power SMD RF package, featuring gull-wing leads and optimized RF layout for minimal parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate | Control electrode | Accepts DC bias and RF drive signal; requires external gate resistor for stability and ESD protection. |
| Source | Reference node | Common return path for RF and DC currents; connected directly to ground plane for low-inductance RF return. |
| Drain | Power output node | Delivers amplified RF output; electrically isolated from package tab but thermally coupled to case for heat transfer. |
Key Features
| Feature | Design Value |
|---|---|
| Common-source configuration | Enables standard Class AB RF amplifier design with predictable input/output impedance and gain behavior. |
| PowerSO-10RF package | JEDEC-compliant SMD footprint with gull-wing leads supports automated assembly and delivers 1.0 °C/W thermal resistance. |
| 20:1 load mismatch tolerance | Eliminates need for external circulators or isolators in base station front-end designs under antenna detuning conditions. |
| 165 °C max junction temperature | Supports operation in high ambient environments (e.g., outdoor macrocell enclosures) with appropriate thermal management. |
Applications
| Cellular Base Station Transmitter | UHF Broadcast Amplifier |
|---|---|
Use Scenario: Final-stage RF power amplification in 900 MHz macrocell base stations with dynamic antenna load variations. IC Role / Device Role / Timing Role: High-efficiency, high-linearity N-channel RF power MOSFET operating in common-source Class AB mode. Use Value: Delivers 60 W output with 17.2 dB gain and withstands 20:1 VSWR, reducing system-level protection circuitry and improving reliability. | Use Scenario: Medium-power UHF TV transmitter final amplifier operating at 470–862 MHz. IC Role / Device Role / Timing Role: Broadband RF power transistor biased at 28 V with 300 mA IDQ for linear amplification. Use Value: 70% drain efficiency minimizes cooling requirements in air-cooled broadcast cabinets; 80 V V(BR)DSS accommodates supply ripple and transients. |
| Industrial RF Heating Driver | Land Mobile Radio (LMR) Repeater PA |
Use Scenario: Solid-state RF generator for dielectric heating systems operating near 915 MHz ISM band. IC Role / Device Role / Timing Role: High-reliability lateral MOSFET delivering continuous 60 W RF power with excellent thermal stability. Use Value: 1.0 °C/W RthJC enables direct mounting to aluminum heatsinks, simplifying thermal design for 24/7 industrial duty cycles. | Use Scenario: High-linearity repeater output stage in public safety LMR systems covering 806–869 MHz. IC Role / Device Role / Timing Role: Common-source RF power amplifier ensuring spectral purity and adjacent channel leakage ratio (ACLR) compliance. Use Value: Superior linearity from ST's LDMOS process reduces out-of-band emissions, meeting FCC Part 90 spectral mask requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2060NR1 | Higher POUT (60 W @ 2.14 GHz), GaN-on-SiC substrate, 28 V operation, RthJC = 0.75 °C/W | Optimized for higher-frequency 3G/4G small cells; requires different gate biasing and thermal interface design | Select for >1.5 GHz operation where bandwidth and efficiency outweigh cost and thermal design complexity |
| PD85006 | LDMOS, 60 W @ 900 MHz, 28 V, RthJC = 1.25 °C/W, PowerSO-10RF straight-lead variant | Same family but straight-lead package; identical electrical specs but different PCB footprint and reflow profile | Select when using straight-lead assembly processes or legacy board layouts designed for LET9060S/STR |
Compared with MRF6V2060NR1 and PD85006, LET9060TR offers optimal balance of UHF gain, thermal performance, and SMD manufacturability in formed-lead PowerSO-10RF - making it preferred for cost-sensitive, high-volume 900 MHz base station and industrial RF amplifier designs.
Availability
LET9060TR is available at Aetrix Electronics and suitable for cellular infrastructure, broadcast transmission, industrial RF heating, and land mobile radio systems requiring stable component supply and JEDEC-compliant SMD packaging.
Supply support for LET9060TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and communications markets.
LET9060TR belongs to ST's LdmoST plastic RF power transistor product line, engineered specifically for high-efficiency, high-reliability UHF power amplification in commercial and industrial wireless infrastructure.
FAQ
What is the recommended gate bias voltage for LET9060TR in Class AB operation?
The LET9060TR specifies VGS(Q) = 2.0–5.0 V at ID = 100 mA, with typical bias set between 3.2 V and 3.8 V for 300 mA quiescent drain current. External gate resistors (10–47 Ω) are required for stability and ESD protection; gate voltage must remain within -0.5 V to +15 V absolute maximum ratings.
Can LET9060TR be used in push-pull configuration?
Yes - LET9060TR supports push-pull operation due to its matched N-channel characteristics and symmetric thermal layout in PowerSO-10RF. Designers must ensure balanced gate drive, symmetrical output matching, and shared heatsinking to maintain current sharing and thermal equilibrium between devices.
Is LET9060TR RoHS-compliant and halogen-free?
Yes - LET9060TR is manufactured in ST's ECOPACK®-compliant PowerSO-10RF package, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. Full compliance documentation is available via ST's quality portal under document number ECOPACK01.
What is the maximum safe operating area (SOA) limit at TC = 70 °C?
At TC = 70 °C, LET9060TR has PDISS = 95 W maximum power dissipation. Combined with V(BR)DSS = 80 V and ID = 12 A, the SOA boundary is defined by the thermal limit (95 W), second breakdown limit (curved region above 10 µs pulse width), and resistive limit (VDS < 80 V, ID < 12 A). Derating is required above 70 °C case temperature.
LET9060TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 960MHz
- Gain:
- 17.2dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 12A
- Noise Figure:
- -
- Current - Test:
- 300 mA
- Power - Output:
- 60W
- Voltage - Rated:
- 80 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Formed Lead)
LET9060TR FAQ
1.How can I place an order for LET9060TR through Aetrix?
Please submit a Request for Quotation (RFQ) for LET9060TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LET9060TR reliable?
The price and inventory of LET9060TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LET9060TR is usually 5 days.
3.What payment methods are accepted for LET9060TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LET9060TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LET9060TR?
LET9060TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LET9060TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LET9060TR?
For technical support, including LET9060TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LET9060TR requirements.
6.How does Aetrix verify that LET9060TR is sourced from the original manufacturer or authorized distributors?
All LET9060TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LET9060TR meets industry standards.
7.What is the process for return or replacement of LET9060TR?
All LET9060TR units undergo pre-shipment inspection (PSI). If there is an issue with LET9060TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LET9060TR part is unused and in its original packaging.
Return procedure for LET9060TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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