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STMicroelectronics LET9070FB
- Part No.:
- LET9070FB
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- M250
- Datasheet:
-
LET9070FB.pdf
- Description:
- RF MOSFET LDMOS 28V M250
- Quantity:
- Payment:
- Shipping:
Inventory:8,801
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Product details
Overview
LET9070FB from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 70 W output power at 945 MHz with 16 dB gain and 60–65% drain efficiency at 28 V supply, designed for base station amplifiers requiring high linearity up to 1.0 GHz.
For engineers reviewing the LET9070FB datasheet, LET9070FB pinout, LET9070FB application, or LET9070FB equivalent, key selection considerations include thermal resistance (1.0 °C/W), gate-source voltage range (−10 to +15 V), drain-source breakdown voltage (80 V), load mismatch tolerance (20:1 VSWR), and BeO-free M250 hermetic package compliance with RoHS Directive 2002/95/EC.
Technical Context
The LET9070FB operates in common-source mode with fixed bias (IDQ = 400 mA) and delivers broadband RF power amplification from DC to 1.0 GHz. Its lateral MOSFET architecture enables excellent thermal stability and high gain flatness across frequency, supported by low input/output capacitances (CISS = 78 pF, COSS = 42 pF) and transconductance of 2.5 mho.
Designed for Class AB operation at 28 V, it maintains stable POUT and GPS under varying load conditions-including full 20:1 VSWR at all phase angles-enabling robust deployment in cellular infrastructure where impedance mismatch resilience is critical for reliability and signal integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 80 V - Ensures safe operation with 28 V rail and transient margin in base station PA stages |
| POUT @ 945 MHz | 70 W - Delivers sufficient RF output for macrocell and microcell BTS final stage amplification |
| GPS @ 945 MHz | 16 dB - Enables single-stage gain targeting without cascaded amplifiers in 900 MHz band designs |
| Drain Efficiency | 60–65 % - Reduces heat generation and cooling requirements in densely packed RF modules |
| Rth(JC) | 1.0 °C/W - Supports high-power dissipation (130 W at TC = 70 °C) with minimal junction-to-case temperature rise |
| VGS Range | −10 to +15 V - Allows flexible gate drive design including negative turn-off for improved linearity and stability |
| Load Mismatch | 20:1 VSWR - Tolerates severe antenna mismatch without device failure or performance collapse |
Pinout & Package
The LET9070FB is housed in the M250 (.230 × .360 inch, 2-lead, non-hermetic with flange) ceramic/metal hermetic package, featuring a flanged metal base for direct heatsink mounting and optimized RF grounding via the source terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1. Drain | RF Power Output Node | High-current RF output path; requires low-inductance RF choke and matching network connection |
| 2. Gate | Control Input Terminal | DC-biased control node; sensitive to ESD (bidirectional protection integrated); requires stable gate bias network |
| 3. Source | Common Reference & Ground Path | RF and DC return path; electrically tied to flange for thermal and RF grounding in PCB layout |
Key Features
| Feature | Design Value |
|---|---|
| BeO-free ceramic package | Eliminates beryllium oxide toxicity risk while maintaining high thermal conductivity for industrial safety compliance |
| Common-source configuration | Enables standard RF amplifier topology with predictable input/output impedance behavior and simplified matching |
| Bidirectional ESD protection | Integrated on-chip protection withstands ±1 kV HBM, reducing external TVS dependency in front-end RF stages |
| Excellent thermal stability | Junction temperature up to 200 °C with stable gain and efficiency drift < 0.1 dB/°C over operating range |
Applications
| Macrocell Base Station PA | Microcell Remote Radio Head |
|---|---|
Use Scenario: Final-stage RF power amplification in 900 MHz cellular macrocell base stations handling multi-carrier signals. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power transistor operating in Class AB common-source mode. Use Value: Delivers 70 W POUT with 65% efficiency and 16 dB gain, enabling compact PA design with reduced cooling overhead and extended MTBF. | Use Scenario: Compact, remotely mounted RF power amplifier in distributed antenna systems (DAS) for indoor coverage. IC Role / Device Role / Timing Role: Broadband RF power transistor supporting 800–1000 MHz band with high VSWR tolerance. Use Value: Withstands 20:1 load mismatch at all phase angles, eliminating need for circulators or isolators in space-constrained RRH enclosures. |
| ISM Band Industrial Transmitter | Land Mobile Radio (LMR) Repeater |
Use Scenario: High-reliability RF amplifier in 915 MHz ISM-band industrial telemetry and wireless sensor networks. IC Role / Device Role / Timing Role: Fixed-bias RF power transistor delivering stable output under wide ambient temperature variation. Use Value: Maintains gain flatness and efficiency across −40 °C to +85 °C case temperature due to lateral MOSFET thermal stability. | Use Scenario: Linear repeater amplifier in public safety LMR systems operating in 800/900 MHz bands. IC Role / Device Role / Timing Role: High-linearity RF power transistor minimizing adjacent channel interference in narrowband FM systems. Use Value: Achieves >60% drain efficiency at 400 mA quiescent current, extending battery backup runtime in emergency repeater deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2750HR5 | Higher POUT (750 W), GaN-on-SiC, 28 V, Rth(JC) = 0.25 °C/W, 1.8–2.2 GHz range | Targeted at higher-frequency macrocell and active antenna systems; not suitable for 945 MHz legacy designs without retuning | Select only when upgrading to GaN-based infrastructure with revised matching networks and thermal management |
| PD85003-E | LDMOS, 30 W POUT @ 945 MHz, Rth(JC) = 1.3 °C/W, same M250 footprint but lower power rating | Lower-cost alternative for lower-tier BTS or lab test setups where 70 W headroom is unnecessary | Use where thermal budget allows higher Rth(JC) and system-level output power can be reduced by 57% |
Compared with MRF6VP2750HR5 and PD85003-E, the LET9070FB provides optimal balance of proven 945 MHz performance, mature thermal design (1.0 °C/W), and drop-in compatibility in existing M250-based 28 V base station PA layouts-without requiring GaN gate drive redesign or derating for thermal limits.
Availability
LET9070FB is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, and industrial ISM transmitters requiring stable component supply with long-lifecycle support and traceable sourcing.
Supply support for LET9070FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and RF components for industrial, automotive, and communications markets.
The LET9070FB belongs to ST's LdmoST family of lateral DMOS RF power transistors, engineered specifically for high-efficiency, high-linearity, broadband amplification in commercial and industrial wireless infrastructure.
FAQ
What is the recommended gate bias voltage for linear operation?
The LET9070FB achieves optimal linearity and efficiency at IDQ = 400 mA, requiring a gate-source voltage of approximately 3.2–3.8 V under typical 28 V drain conditions. This is set using a stable resistive divider or active bias circuit with temperature compensation to maintain quiescent current across thermal drift.
Can LET9070FB operate at 35 V drain supply?
Yes-the device supports 35 V operation per absolute maximum ratings and demonstrates 100 W POUT capability at that voltage. However, thermal management must be re-evaluated: junction temperature rises faster due to increased power dissipation, and Rth(JC) remains 1.0 °C/W, requiring enhanced heatsinking or derating above 28 V.
Is external ESD protection required despite built-in bidirectional ESD?
No external ESD protection is required during board assembly or normal operation, as the LET9070FB integrates bidirectional on-chip ESD structures rated to ±1 kV HBM. However, handling precautions (grounded wrist straps, ESD-safe workstations) remain mandatory prior to soldering to prevent latent damage.
Does the M250 package require solder paste or conductive epoxy for heatsink attachment?
The M250 package flange is designed for mechanical clamping or screw-mounting to a heatsink; conductive epoxy is not required or recommended. Thermal interface material (e.g., silicone grease or phase-change pad) must be applied between flange and heatsink surface to minimize thermal resistance-solder paste is incompatible with the ceramic/metal construction and risks cracking.
LET9070FB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- M250
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 16dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 1µA
- Noise Figure:
- -
- Current - Test:
- 400 mA
- Power - Output:
- 70W
- Voltage - Rated:
- 80 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- M250
LET9070FB FAQ
1.How can I place an order for LET9070FB through Aetrix?
Please submit a Request for Quotation (RFQ) for LET9070FB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LET9070FB reliable?
The price and inventory of LET9070FB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LET9070FB is usually 5 days.
3.What payment methods are accepted for LET9070FB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LET9070FB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LET9070FB?
LET9070FB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LET9070FB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LET9070FB?
For technical support, including LET9070FB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LET9070FB requirements.
6.How does Aetrix verify that LET9070FB is sourced from the original manufacturer or authorized distributors?
All LET9070FB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LET9070FB meets industry standards.
7.What is the process for return or replacement of LET9070FB?
All LET9070FB units undergo pre-shipment inspection (PSI). If there is an issue with LET9070FB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LET9070FB part is unused and in its original packaging.
Return procedure for LET9070FB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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