Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Vishay General Semiconductor - Diodes Division LL42-GS18

Name: LL42-GS18
Brand: Vishay General Semiconductor - Diodes Division
SKU: LL42-GS18
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: LL42-GS18

Manufacturer:: Vishay General Semiconductor - Diodes Division

Category:: Single Diodes

Package:: DO-213AC, MINI-MELF, SOD-80

Datasheet:: LL42-GS18.pdf

Description:: DIODE SCHOT 30V 200MA SOD80

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,688

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

LL42-GS18 from Vishay Semiconductors is a single small-signal Schottky diode in MiniMELF (SOD-80) package, rated for 30 V repetitive peak reverse voltage, 200 mA forward continuous current, and 5 ns reverse recovery time. It delivers low forward voltage (400 mV at 10 mA, 650 mV at 50 mA) and 7 pF junction capacitance, enabling efficient high-frequency rectification in signal demodulation and power rail clamping circuits.

For engineers reviewing the LL42-GS18 datasheet, LL42-GS18 pinout, LL42-GS18 application, or LL42-GS18 equivalent, key selection criteria include its 30 V V_RRM, 5 ns trr, MiniMELF thermal resistance of 300 K/W, cathode-band-marked glass-body construction, and suitability for low-loss RF detection and fast-switching DC-DC converter bias networks.

Technical Context

This Schottky diode operates without a PN junction barrier-its metal-semiconductor interface enables sub-400 mV turn-on at low currents and nanosecond-scale switching. The integrated PN guard ring provides ESD protection up to human-body-model levels while maintaining low leakage (0.5 μA at 25 V, 25 °C).

Designed for ambient operation from –55 °C to +125 °C, it sustains 4 A surge current (10 ms) and dissipates 200 mW at 65 °C ambient. Its 7 pF capacitance at 1 V reverse bias supports 45 MHz rectification efficiency of 80 % under defined RF load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	30 V - Maximum reverse voltage before breakdown; sets upper limit for clamping or blocking applications
I_F continuous	200 mA - Sustained forward current capability; defines steady-state power handling in bias or supply paths
t_rr	5 ns - Reverse recovery time; enables use in >10 MHz switching circuits with minimal switching loss
V_F @ 10 mA	400 mV - Low forward drop at signal-level currents; critical for detector sensitivity and low-voltage logic clamping
C_D @ 1 V	7 pF - Junction capacitance; determines high-frequency impedance and bandwidth in RF coupling/detection
I_R @ 25 V	0.5 μA - Reverse leakage at rated voltage; ensures minimal standby current in battery-powered sensing nodes
R_thJA	300 K/W - Junction-to-ambient thermal resistance; requires minimal PCB copper for thermal management in sealed enclosures

Pinout & Package

MiniMELF (SOD-80) cylindrical glass package with black cathode band marking; 3.3–3.7 mm body length, 1.4–1.6 mm diameter, ~31 mg mass. Cathode identified by axial black band; anode is unmarked end.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to higher-potential node in rectifier or clamp; must tolerate 4 A surge during transient events
Cathode	Forward current exit / reverse blocking terminal	Marked with black band; referenced to system ground or lower-potential rail in polarity-sensitive detection circuits

Key Features

Feature	Design Value
Low forward voltage	400 mV at 10 mA enables >90 % voltage transfer efficiency in low-amplitude RF envelope detection
Fast switching speed	5 ns t_rr supports clean pulse rectification in 20+ MHz clock recovery and sampling circuits
ESD-protected structure	Integrated PN guard ring withstands >8 kV HBM, reducing need for external TVS in handheld sensor interfaces
High-temperature operation	Rated to +125 °C junction temperature; maintains stable V_F and I_R in automotive under-hood signal conditioning
MiniMELF reliability	Hermetically sealed glass package ensures long-term parameter stability in humid or chemically aggressive environments

Applications

RF Signal Detection	Low-Voltage Power Rail Clamping
Use Scenario: Demodulating AM signals in 27 MHz ISM-band remote controls and tire pressure sensors. IC Role / Device Role / Timing Role: Schottky detector diode converting RF envelope to baseband DC voltage. Use Value: 400 mV V_F at 2 mA preserves weak-signal sensitivity; 7 pF C_D minimizes RF shunting above 10 MHz.	Use Scenario: Protecting 3.3 V microcontroller I/O pins from inductive kickback in industrial solenoid drivers. IC Role / Device Role / Timing Role: Fast clamping diode diverting transient energy to V_CC or GND rails. Use Value: 5 ns t_rr ensures clamping activation before MCU input damage threshold is exceeded.
High-Frequency DC-DC Bias Network	Low-Power Sensor Signal Conditioning
Use Scenario: Providing gate drive bias in synchronous buck converters operating at 500 kHz–2 MHz. IC Role / Device Role / Timing Role: Bootstrap diode charging high-side FET gate capacitor during low-side conduction phase. Use Value: 200 mA I_F rating and 300 K/W R_thJA support continuous 100 ns–1 μs charge pulses without thermal runaway.	Use Scenario: Level-shifting and protecting analog outputs of ultra-low-power gas sensors (<100 μA sleep current). IC Role / Device Role / Timing Role: Bidirectional ESD clamp on sensor output line interfacing with ADC inputs. Use Value: 0.5 μA I_R at 25 V prevents loading of high-impedance sensor outputs; guard ring ensures ±8 kV HBM robustness.

RF Signal Detection

Low-Voltage Power Rail Clamping

Use Scenario: Demodulating AM signals in 27 MHz ISM-band remote controls and tire pressure sensors.

IC Role / Device Role / Timing Role: Schottky detector diode converting RF envelope to baseband DC voltage.

Use Value: 400 mV V_F at 2 mA preserves weak-signal sensitivity; 7 pF C_D minimizes RF shunting above 10 MHz.

Use Scenario: Protecting 3.3 V microcontroller I/O pins from inductive kickback in industrial solenoid drivers.

IC Role / Device Role / Timing Role: Fast clamping diode diverting transient energy to V_CC or GND rails.

Use Value: 5 ns t_rr ensures clamping activation before MCU input damage threshold is exceeded.

High-Frequency DC-DC Bias Network

Low-Power Sensor Signal Conditioning

Use Scenario: Providing gate drive bias in synchronous buck converters operating at 500 kHz–2 MHz.

IC Role / Device Role / Timing Role: Bootstrap diode charging high-side FET gate capacitor during low-side conduction phase.

Use Value: 200 mA I_F rating and 300 K/W R_thJA support continuous 100 ns–1 μs charge pulses without thermal runaway.

Use Scenario: Level-shifting and protecting analog outputs of ultra-low-power gas sensors (<100 μA sleep current).

IC Role / Device Role / Timing Role: Bidirectional ESD clamp on sensor output line interfacing with ADC inputs.

Use Value: 0.5 μA I_R at 25 V prevents loading of high-impedance sensor outputs; guard ring ensures ±8 kV HBM robustness.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAT42W-V	SOD-123 plastic package; 30 V V_RRM, 200 mA I_F, 5 ns t_rr, but 1000 mV V_F @ 200 mA vs. 1000 mV for LL42-GS18	Surface-mount compatible with automated pick-and-place; less suited for high-reliability hermetic environments	Select BAT42W-V when board space and assembly automation outweigh glass-package longevity requirements
1N5711	DO-35 glass package; 70 V V_RRM, 150 mA I_F, 1000 mV V_F @ 15 mA, no guard ring; higher leakage (5 μA @ 25 V)	Higher reverse voltage margin but slower switching and lower surge tolerance (1.5 A I_FSM)	Select 1N5711 only where 70 V blocking is mandatory and 5 ns t_rr is not required

Compared with BAT42W-V and 1N5711, LL42-GS18 uniquely combines MiniMELF hermetic reliability, 5 ns switching, and 400 mV low-current V_F-making it optimal for mission-critical RF detection and thermally constrained clamping where parameter stability across temperature and life is essential.

Availability

LL42-GS18 is available at Aetrix Electronics and suitable for RF detection, low-voltage clamping, and high-frequency bias network applications requiring stable component supply, consistent MiniMELF mechanical form factor, and verified 5 ns switching performance across production lots.

Supply support for LL42-GS18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements with emphasis on reliability, precision, and power efficiency.

The LL42-GS18 belongs to Vishay's MiniMELF Schottky diode product line, engineered for high-frequency signal integrity and thermal resilience in compact, harsh-environment electronics such as automotive sensors and wireless IoT endpoints.

FAQ

What is the maximum reverse voltage rating for LL42-GS18?

The LL42-GS18 has a repetitive peak reverse voltage (V_RRM) rating of 30 V, validated per Vishay Document Number 85672. This value defines the highest continuous reverse-bias voltage the diode can block without entering avalanche breakdown. Exceeding 30 V risks irreversible junction failure, especially at elevated temperatures where leakage increases. The LL42-GS18 must be applied within this limit in all designs, including transient-clamp configurations where voltage spikes could approach or exceed V_RRM.

Does LL42-GS18 have a built-in ESD protection structure?

Yes, the LL42-GS18 incorporates a PN junction guard ring specifically designed to protect the Schottky junction against electrostatic discharge. As documented in the Vishay datasheet (Rev. 2.0, 12-May-2025), this feature enables robustness against human-body-model ESD events without requiring external protection components in many signal-path applications. The guard ring does not affect forward conduction characteristics but enhances reliability in handling-sensitive environments like portable sensor assemblies where the LL42-GS18 serves as an I/O clamp.

What is the forward voltage of LL42-GS18 at 10 mA and 50 mA?

Per the Vishay datasheet, the LL42-GS18 exhibits a typical forward voltage of 400 mV at 10 mA and 650 mV at 50 mA, both measured at 25 °C ambient. These values reflect the low-barrier Schottky contact and are critical for low-loss signal detection and bias generation. At 200 mA, V_F rises to 1000 mV-confirming its suitability for moderate-current applications but not high-power rectification. Designers should reference the full V_F vs. I_F curve in Figure 2 of document 85672 when modeling LL42-GS18 behavior across operating conditions.

Is LL42-GS18 supplied in tape-and-reel packaging?

Yes, the LL42-GS18 is supplied in tape-and-reel format, specifically as GS18: 10,000 units per 13-inch reel using 8 mm carrier tape, packed 10,000 per box. An alternative ordering code LL42-GS08 denotes 2,500 units per 7-inch reel (also 8 mm tape), with 12,500 units per box. Both variants share identical electrical and thermal specifications; the choice depends solely on production volume and SMT line feeder compatibility. No bulk or ammo-pack options are specified for LL42-GS18 in the official Vishay documentation.

What is the thermal resistance junction-to-ambient for LL42-GS18?

The LL42-GS18 has a thermal resistance junction-to-ambient (R_thJA) of 300 K/W, measured under free-air conditions per standard JEDEC test methods. This value indicates that for every 100 mW of power dissipated in the diode, the junction temperature rises approximately 30 °C above ambient. To maintain operation within the 125 °C maximum junction temperature limit, designers must ensure ambient temperature remains ≤95 °C when dissipating 100 mW. The MiniMELF package's glass-body construction contributes to this relatively high R_thJA, distinguishing it from surface-mount alternatives with lower thermal resistance.

LL42-GS18 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay General Semiconductor - Diodes Division

Series:: -

Package/Case:: DO-213AC, MINI-MELF, SOD-80

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Schottky

Voltage - DC Reverse (Vr) (Max):: 30 V

Current - Average Rectified (Io):: 200mA

Voltage - Forward (Vf) (Max) @ If:: 650 mV @ 50 mA

Speed:: Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr):: 5 ns

Current - Reverse Leakage @ Vr:: 500 nA @ 25 V

Capacitance @ Vr, F:: 7pF @ 1V, 1MHz

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOD-80 MiniMELF

Operating Temperature - Junction:: 125°C (Max)

LL42-GS18 FAQ

1.How can I place an order for LL42-GS18 through Aetrix?

Please submit a Request for Quotation (RFQ) for LL42-GS18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LL42-GS18 reliable?

The price and inventory of LL42-GS18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LL42-GS18 is usually 5 days.

3.What payment methods are accepted for LL42-GS18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LL42-GS18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LL42-GS18?

LL42-GS18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LL42-GS18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LL42-GS18?

For technical support, including LL42-GS18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LL42-GS18 requirements.

6.How does Aetrix verify that LL42-GS18 is sourced from the original manufacturer or authorized distributors?

All LL42-GS18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LL42-GS18 meets industry standards.

7.What is the process for return or replacement of LL42-GS18?

All LL42-GS18 units undergo pre-shipment inspection (PSI). If there is an issue with LL42-GS18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LL42-GS18 part is unused and in its original packaging.

Return procedure for LL42-GS18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …