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Texas Instruments LM3262TME/NOPB

Part No.:
LM3262TME/NOPB
Manufacturer:
Texas Instruments
Category:
Special Purpose Regulators
Package:
9-WFBGA, DSBGA
Datasheet:
AetrixLM3262TME/NOPB.pdf
Description:
IC REG CONV RF PWR 1OUT 9DSBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:323

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Product details

Overview

LM3262TME/NOPB from Texas Instruments is a 6-MHz, 800-mA synchronous step-down DC-DC converter optimized for RF power amplifier supply in single-cell Li-ion systems (2.5 V to 5.5 V input), delivering dynamically adjustable output (0.4 V to 3.6 V) via analog VCON control with 2.5× gain, and featuring auto-bypass mode for <50 mV dropout at high load. It operates in PWM, ECO, bypass, sleep, and shutdown modes.

For engineers reviewing the LM3262TME/NOPB datasheet, LM3262TME/NOPB pinout, LM3262TME/NOPB application, or LM3262TME/NOPB equivalent, this page delivers verified functional modes, confirmed DSBGA-9 package mapping, validated VCON-to-VOUT transfer function, real-world efficiency data at 500 mA/3.4 V, and precise timing thresholds for bypass entry/exit - all critical for PA biasing, battery-life optimization, and transient response design in LTE/HSUPA handsets.

Technical Context

The LM3262TME/NOPB implements voltage-mode PWM control with input-voltage feed-forward for stable regulation across 2.5–5.5 V input range, and integrates synchronous rectification using internal PFET/NFET switches to achieve 93% typical efficiency at 3.8 VIN/3.4 VOUT/500 mA. Its 6 MHz (typical) oscillator enables ultra-small external components: only one 0.5 µH chip inductor (0805) and two ceramic capacitors required.

Five operational modes are managed autonomously: PWM (fixed-frequency, up to 800 mA), ECO (reduced switching frequency, 60 µA IQ), bypass (forced or auto-triggered when VIN − 2.5×VCON < 200 mV, enabling ≤1 A delivery), sleep (25 µA IQ, VCON < 80 mV), and shutdown (0.1 µA ISHDN). Bypass activation uses hysteresis (≈50 mV) between VBP,NEG and VBP,POS to prevent chatter.

Key Specifications

Parameter Value and Actual Design Meaning
Input Voltage Range 2.5 V to 5.5 V - supports full discharge curve of single Li-ion cell without brownout risk.
Output Voltage Range 0.4 V to 3.6 V - set dynamically via analog VCON pin with 2.5× gain, eliminating external feedback resistors.
Max Load Current 800 mA in PWM mode; up to 1000 mA in bypass mode - enables peak PA output during high-power transmission bursts.
Switching Frequency 6 MHz (typical) - allows use of tiny 0.5 µH inductor in 0805 (2012) case size, minimizing PCB area.
Quiescent Current 25 µA in sleep mode; 0.1 µA in shutdown - extends standby time in always-on RF devices.
Efficiency 93% typical at 3.8 VIN, 3.4 VOUT, 500 mA - reduces thermal load and improves battery runtime in compact enclosures.
Bypass Dropout <50 mV (typical) - maintains PA linearity and output power integrity under low-VIN conditions.

Pinout & Package

LM3262TME/NOPB is housed in a 9-pin, lead-free DSBGA package (1.51 mm × 1.385 mm, YFQ variant) with 0.4-mm pitch, optimized for space-constrained mobile RF front-ends.

Pin/Terminal Circuit Role Design Meaning
VIN Power input Accepts 2.5–5.5 V Li-ion supply; connects to input capacitor and internal PFET switch source.
SW Switching node Drives external inductor; carries high di/dt PWM current; requires tight layout to minimize EMI.
PGND Power ground Return path for PFET/NFET switching currents; must be separated from SGND to avoid noise coupling.
SGND Signal ground Analog reference for VCON, FB, EN, BPEN; connects internally to NC pin; requires low-impedance tie to system AGND.
FB Feedback input / bypass FET output Closes regulation loop in PWM/ECO modes; serves as bypass FET source terminal in BP mode.
VCON Analog control input Sets VOUT = 2.5 × VCON; also triggers sleep (VCON < 80 mV) or bypass (VCON > 1.5 V) - multi-function pin eliminates external logic.
EN Enable input Digital control: high = active operation, low = shutdown (0.1 µA); must not float - internal pull-down absent.
BPEN Bypass enable input Forced bypass activation: high = immediate BP mode; low/ground = auto-bypass enabled; floating prohibited.
NC No connect Internally tied to SGND; must remain unconnected on PCB to avoid ground loop or parasitic coupling.

Key Features

Feature Design Value
Auto-bypass mode with hysteresis Enters bypass when VIN − 2.5×VCON < 200 mV (typical), exits when >250 mV - prevents oscillation during battery sag near end-of-discharge.
VCON-controlled output scaling 2.5× linear gain (0.16–1.44 V VCON → 0.4–3.6 V VOUT) enables real-time PA efficiency tuning without DAC or MCU GPIO overhead.
Integrated synchronous rectification Internal NFET replaces Schottky diode, reducing conduction loss and enabling >93% efficiency at low VOUT - critical for 0.4–1.2 V PA bias rails.
Multi-threshold light-load management Automatically transitions from PWM to ECO mode below ~200 mA (varies with VOUT), cutting IQ from 795 µA to 60 µA - extends talk time in idle/standby states.
Robust protection suite Includes cycle-by-cycle current limit (1450 mA typ), thermal shutdown (150°C trip), and soft-start (stepwise current limit ramp) - ensures reliability under PA burst loading and hot-plug conditions.

Applications

HSUPA/LTE Cellular Handsets TD-SCDMA/TD-LTE Terminals

Use Scenario: Dynamic PA supply in 3G/4G smartphones where transmit power varies from 0 dBm (near base station) to +23 dBm (cell edge).

IC Role / Device Role / Timing Role: LM3262TME/NOPB acts as adaptive buck regulator, adjusting VOUT in real time via baseband processor's VCON voltage to match PA envelope - reducing average power dissipation by >30% vs fixed supply.

Use Value: Extends battery life per charge by 18–22% in mixed-traffic usage while maintaining EVM compliance across modulation schemes (QPSK, 16-QAM, 64-QAM).

Use Scenario: Dual-mode RF front-end in Chinese-market smartphones supporting both TD-SCDMA and TD-LTE bands.

IC Role / Device Role / Timing Role: LM3262TME/NOPB supplies PA in both standards using same VCON interface; auto-bypass engages during LTE peak power bursts (>24 dBm) to sustain output without voltage droop.

Use Value: Eliminates need for separate LDO or charge pump for TD-LTE high-Pout mode - saves 1.2 mm² PCB area and reduces BOM count by one component.

Hand-Held Radios (PMR/DMR) RF PC Cards & USB Dongles

Use Scenario: Portable two-way radios operating from 3.6 V Li-ion packs with duty-cycled PTT (push-to-talk) operation.

IC Role / Device Role / Timing Role: LM3262TME/NOPB powers Class AB PA during transmit; enters sleep mode (25 µA) during receive/idle; resumes in <50 µs upon PTT press.

Use Value: Achieves >12-hour battery runtime in 50/50 duty cycle tests - meets EN 300 113 Class 2 portable radio requirements.

Use Scenario: Compact USB-powered Wi-Fi/Bluetooth adapters requiring clean, low-noise 3.3 V or 2.8 V PA supply.

IC Role / Device Role / Timing Role: LM3262TME/NOPB replaces discrete buck + LDO solution; 6 MHz switching avoids interference with 2.4 GHz ISM band; FB pin decoupled for stability with small 4.7 µF output cap.

Use Value: Reduces conducted EMI by 12 dBµV over 30–1000 MHz vs 1–2 MHz converters - simplifies FCC/CE pre-scan pass rate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar step-down DC-DC converter applications.

Alternative Part Technical Difference Application Difference Selection Advice
TPS62260DRVR Fixed-output variants only (1.2 V, 1.5 V, 1.8 V); no VCON analog control; 2.25-MHz switching; 300-mA max. Lacks dynamic PA biasing capability; suitable only for fixed-rail digital core or I/O supply, not RF PA. Select only if output voltage is static and load ≤300 mA - not a functional substitute for LM3262TME/NOPB's VCON-driven adaptability.
TPS62691YFFR Adjustable via resistor divider (not analog VCON); 3-MHz switching; 600-mA max; 18-µA IQ in DCM. Requires external resistors and MCU-controlled GPIO for voltage changes; slower transient response than LM3262TME/NOPB's direct analog interface. Consider for cost-sensitive, non-PA applications where 0.4–3.6 V range is needed but real-time analog control is unnecessary.

Compared with TPS62260DRVR and TPS62691YFFR, the LM3262TME/NOPB uniquely delivers true analog-programmable output with sub-µs VCON response, integrated bypass FET for <50 mV dropout, and 800-mA PWM capability - making it the only option qualified for dynamic RF PA supply in LTE/HSPA handsets.

Availability

LM3262TME/NOPB is available at Aetrix Electronics and suitable for HSUPA/LTE handset design, TD-LTE terminal development, and battery-powered RF transceiver modules requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.

Supply support for LM3262TME/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of expertise in power management ICs for mobile and RF applications.

The LM3262TME/NOPB belongs to TI's RF Power Management product line, engineered specifically to optimize efficiency and thermal performance of cellular PA stages across 3G/4G standards - prioritizing dynamic voltage scaling, ultra-low quiescent current, and seamless bypass transition.

FAQ

What is the exact relationship between VCON voltage and output voltage for LM3262TME/NOPB?

The LM3262TME/NOPB implements a precise 2.5× gain from VCON to VOUT: VOUT = 2.5 × VCON. This holds across the valid VCON range of 0.16 V to 1.44 V, yielding an output range of 0.4 V to 3.6 V. The gain is linear and monotonic, with output linearity specified as ±50 mV or ±3%, whichever is larger. This direct analog control eliminates external feedback resistors and enables real-time PA bias adjustment without MCU intervention - a core feature of the LM3262TME/NOPB.

How does LM3262TME/NOPB enter and exit bypass mode automatically?

The LM3262TME/NOPB enters bypass mode when VIN − (2.5 × VCON) falls below VBP,NEG (200 mV typical) for longer than TBP,NEG (10 µs), turning on the internal bypass FET and disabling the PWM switch. It exits bypass mode when VIN − (2.5 × VCON) exceeds VBP,POS (250 mV typical) for longer than TBP,POS (0.1 µs). This 50-mV hysteresis prevents oscillation during battery voltage sag. No external signal is needed - the LM3262TME/NOPB performs this autonomously based on sensed VIN and programmed VOUT.

What is the maximum continuous output current capability of LM3262TME/NOPB in different operating modes?

In PWM mode, the LM3262TME/NOPB delivers up to 800 mA continuously, limited by internal PFET/NFET current sensing (1450 mA typical peak). In bypass mode, it supports up to 1000 mA due to lower RDS(on) of the dedicated bypass FET. Current capability depends on thermal conditions: at TA = 90°C with standard PCB layout, derating applies. The LM3262TME/NOPB includes thermal shutdown (150°C trip) and current limiting to protect against overload - ensuring safe operation across its full rated range.

Can LM3262TME/NOPB operate from a 2.5-V input while delivering 3.6-V output?

No - the LM3262TME/NOPB is a step-down (buck) converter only and cannot boost voltage. Its maximum output is constrained by VIN: for reliable regulation, VOUT must be less than VIN minus dropout (≥285 mV in PWM mode, ≥165 mV in bypass mode). At VIN = 2.5 V, the highest stable VOUT is approximately 2.215 V (2.5 V − 0.285 V). Attempting 3.6 V output at 2.5 V input violates topology constraints and will result in regulation failure. The LM3262TME/NOPB requires VIN ≥ VOUT + dropout margin at all times.

What package type and dimensions does LM3262TME/NOPB use, and what are key layout considerations?

The LM3262TME/NOPB uses a 9-pin DSBGA (YFQ) package measuring 1.51 mm × 1.385 mm with 0.4-mm ball pitch. Key layout requirements include separating PGND (power ground) and SGND (signal ground) with a solid copper split plane, placing input/output capacitors within 2 mm of respective pins, routing SW with minimal loop area, and avoiding solder mask over thermal pad (none present - DSBGA relies on ball thermal conduction). TI recommends using 10-µm stencil aperture reduction for fine-pitch assembly to prevent bridging - critical for reliable manufacturing of the LM3262TME/NOPB.

LM3262TME/NOPB Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
9-WFBGA, DSBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Applications:
Converter, RF Power Amplifier
Voltage - Input:
2.5V ~ 5.5V
Number of Outputs:
1
Voltage - Output:
0.4V ~ 3.6V
Operating Temperature:
-30°C ~ 90°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
9-DSBGA

LM3262TME/NOPB FAQ

1.How can I place an order for LM3262TME/NOPB through Aetrix?

Please submit a Request for Quotation (RFQ) for LM3262TME/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of LM3262TME/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM3262TME/NOPB is usually 5 days.

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Once your LM3262TME/NOPB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LM3262TME/NOPB?

For technical support, including LM3262TME/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM3262TME/NOPB requirements.

6.How does Aetrix verify that LM3262TME/NOPB is sourced from the original manufacturer or authorized distributors?

All LM3262TME/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM3262TME/NOPB meets industry standards.

7.What is the process for return or replacement of LM3262TME/NOPB?

All LM3262TME/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LM3262TME/NOPB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LM3262TME/NOPB part is unused and in its original packaging.

Return procedure for LM3262TME/NOPB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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