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Texas Instruments LM74800QDRRRQ1

Part No.:
LM74800QDRRRQ1
Manufacturer:
Texas Instruments
Category:
OR Controllers, Ideal Diodes
Package:
12-WFDFN Exposed Pad
Datasheet:
AetrixLM74800QDRRRQ1.pdf
Description:
3-V TO 65-V, AUTOMOTIVE IDEAL DI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,192

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Product details

Overview

LM74800QDRRRQ1 from Texas Instruments is an AEC-Q100 Grade 1 automotive ideal diode controller that drives back-to-back N-channel MOSFETs in common drain or common source topologies to replace Schottky diodes in 12-V/24-V battery systems. It delivers 10.5-mV forward voltage regulation, –4.5-mV reverse detection threshold with 0.5-µs response, and supports 200-V unsuppressed load dump protection in 24-V ECU designs such as ADAS domain controllers and camera ECUs.

For engineers reviewing the LM74800QDRRRQ1 datasheet, LM74800QDRRRQ1 pinout, LM74800QDRRRQ1 application, or LM74800QDRRRQ1 equivalent, key selection criteria include its linear-regulation-based reverse current blocking, dual gate drive (DGATE/HGATE), adjustable overvoltage cutoff, 3-V to 65-V input range, and WSON-12 package compatibility with automotive thermal and transient requirements per ISO7637 and ISO16750.

Technical Context

The LM74800QDRRRQ1 implements a closed-loop linear regulator for DGATE control to maintain precise 10.5-mV A–C forward voltage drop, enabling graceful MOSFET turn-off during slow ramp-down transients while ensuring zero DC reverse current. Its fast comparator-based reverse detection (–4.5 mV, 0.5 µs) handles micro-short events independently of the regulation loop.

Dual independent gate drivers-DGATE (20-mA peak source, 2.6-A sink) and HGATE (75-µA source, 260-mA sink)-support separate control of low-side and high-side MOSFETs. The charge pump (CAP/VS) sustains gate drive above 12.2 V with 2.7-mA typical sourcing, enabling robust N-FET operation across the full 3–65-V input range.

Key Specifications

Parameter Value and Actual Design Meaning
Input Voltage Range3 V to 65 V - Supports direct connection to 12-V and 24-V automotive batteries including load dump transients.
Forward Voltage Regulation10.5 mV (typ) - Enables ultra-low conduction loss replacement of Schottky diodes with predictable power dissipation.
Reverse Detection Threshold–4.5 mV - Triggers sub-µs shutdown to block reverse current before damaging energy transfer occurs.
DGATE Peak Sink Current2.6 A - Ensures rapid MOSFET turn-off under fault conditions, critical for ISO7637 pulse immunity.
Shutdown Quiescent Current2.87 µA - Minimizes battery drain during vehicle sleep mode without external disconnect switches.
Charge Pump Output Voltage12.2 V to 13.2 V - Maintains sufficient gate overdrive for N-FETs across full temperature and supply range.
Ambient Temperature Range–40°C to +125°C - Qualified per AEC-Q100 Grade 1 for under-hood and ECU module deployment.

Pinout & Package

The LM74800QDRRRQ1 is housed in a thermally enhanced 12-pin WSON package (3.0 mm × 3.0 mm, exposed thermal pad not connected to GND). Pin functions are validated per TI SNOSD95C Rev C.

Pin/Terminal Circuit Role Design Meaning
DGATEDiode gate driver outputDrives gate of low-side N-MOSFET; 20-mA source / 2.6-A sink capability enables fast switching.
AAnode sensing nodeConnects to source of low-side MOSFET; monitors forward/reverse voltage drop for regulation and protection.
VSNSVoltage sense inputMonitors battery rail via resistor ladder; internal switch (SW) disconnects ladder during shutdown to reduce leakage.
OVOvervoltage threshold inputConfigures adjustable cut-off threshold (1.13–1.26 V) using external resistor divider for load dump protection.
EN/UVLOEnable and UVLO inputEnables device above 1.23 V; pulls low to enter 2.87-µA shutdown; supports microcontroller-controlled power sequencing.
HGATEHigh-side gate driver outputControls gate of high-side N-MOSFET for ON/OFF load disconnect and overvoltage cutoff functionality.
OUTOutput rail senseConnects to source of high-side MOSFET; provides reference for HGATE control and load monitoring.
VSIC supply inputPower input for internal circuitry; requires 100-nF decoupling to GND; supports up to 65 V.
CAPCharge pump outputDrives external 100-nF capacitor to generate boosted gate drive voltage for N-FETs.
CCathode sensing nodeConnects to drain of low-side MOSFET; completes A–C differential measurement for ideal diode control.

Key Features

Feature Design Value
Linear-regulated forward voltage controlMaintains 10.5-mV A–C drop across full temperature and load range, eliminating thermal runaway in Schottky replacements.
Fast reverse current detection–4.5-mV threshold with 0.5-µs response ensures compliance with ISO16750-2 micro-short test profiles.
Adjustable overvoltage protectionProgrammable cutoff via OV pin resistor ladder enables tailored response to 200-V unsuppressed load dumps in 24-V systems.
Low-shutdown current2.87-µA ISHDN allows direct battery connection in always-on ECUs without auxiliary power switches.
Back-to-back N-MOSFET supportIndependent DGATE/HGATE drivers enable flexible common-drain (ORing) or common-source (load dump protection) configurations.

Applications

ADAS Domain Controller Power Path Camera ECU Reverse Polarity Protection

Use Scenario: Protects multi-rail ADAS domain controller from battery reversal, load dump, and inrush during hot-swap events.

IC Role / Device Role / Timing Role: Ideal diode controller managing dual N-MOSFETs in common-source topology to isolate 24-V input and clamp 200-V transients.

Use Value: Eliminates need for bulky TVS + Schottky stacks while maintaining <10.5-mV conduction loss and meeting LV124 pulse test requirements.

Use Scenario: Secures rear-view and surround-view camera modules against reverse battery connection during service or assembly.

IC Role / Device Role / Timing Role: Controls single low-side N-MOSFET as ideal diode with linear regulation and sub-µs reverse blocking.

Use Value: Prevents >100-µA reverse leakage at –14 V and ensures zero DC reverse current flow per AEC-Q100 stress testing.

Automotive Head Unit Battery Backup USB Hub Redundant Power ORing

Use Scenario: Maintains clean 12-V supply to infotainment head unit during engine cranking and stop-start cycles.

IC Role / Device Role / Timing Role: Implements common-drain back-to-back MOSFET configuration with mid-point used for ORing with secondary power path.

Use Value: Delivers <10.5-mV forward drop and <2.8-µs forward transition time to sustain VOUT during 6-V cranking dips without brownout.

Use Scenario: Enables seamless switchover between primary and backup 5-V USB power rails in telematics gateways.

IC Role / Device Role / Timing Role: Functions as ideal diode controller in common-drain topology with mid-point shared across two LM7480x-Q1 devices.

Use Value: Achieves <100-ns reverse isolation and <3-µs forward turn-on, minimizing data corruption during power source handover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ideal diode controller applications.

Alternative Part Technical Difference Application Difference Selection Advice
LM74801QDRRRQ1Uses comparator-only reverse blocking (no linear regulation); faster reverse turn-off but no 10.5-mV VF holdup.Suitable for applications prioritizing micro-short immunity over precise forward drop control (e.g., simple reverse polarity guards).Select LM74801QDRRRQ1 when linear regulation is unnecessary and lowest possible reverse response time is required.
TPS2491RGETSingle-gate controller (HGATE only); no DGATE or A–C regulation; fixed 13-V OVP; no load dump rating.Limited to basic high-side switch control without reverse battery or ideal diode functionality.Choose TPS2491RGET only for non-automotive, low-transient environments requiring simple ON/OFF load control.

Compared with LM74801QDRRRQ1 and TPS2491RGET, the LM74800QDRRRQ1 uniquely combines linear-regulated forward voltage control, dual-gate drive, and 200-V load dump support-making it the only option qualified for demanding automotive power path protection where both precision conduction loss and transient robustness are mandatory.

Availability

LM74800QDRRRQ1 is available at Aetrix Electronics and suitable for automotive battery protection, ADAS domain controllers, and camera ECU designs requiring stable component supply across extended temperature and long product lifecycles.

Supply support for LM74800QDRRRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with deep expertise in automotive-grade power management ICs.

The LM7480x-Q1 product line was designed specifically for automotive power path protection-delivering integrated ideal diode control, load disconnect, and programmable overvoltage cutoff in a single AEC-Q100-qualified device.

FAQ

What is the forward voltage regulation accuracy of the LM74800QDRRRQ1?

The LM74800QDRRRQ1 regulates the forward voltage drop between pins A and C to 10.5 mV (typical), with a specified range of 6.8 mV to 13.4 mV across temperature and process variation. This linear regulation ensures consistent conduction loss and eliminates thermal runaway risks inherent in discrete Schottky solutions. The LM74800QDRRRQ1 achieves this via an internal amplifier controlling DGATE voltage in real time.

How does the LM74800QDRRRQ1 handle reverse battery conditions?

The LM74800QDRRRQ1 blocks reverse current down to –65 V using a dual-stage approach: a fast comparator triggers DGATE turn-off within 0.5 µs when A–C drops to –4.5 mV, while the linear regulator ensures zero DC reverse current flow. Its A pin withstands –65 V, and cathode leakage remains below 32 µA at –14 V, satisfying AEC-Q100 reverse polarity stress requirements.

Can the LM74800QDRRRQ1 protect against 200-V load dumps in 24-V systems?

Yes-the LM74800QDRRRQ1 supports 200-V unsuppressed load dump protection when configured with external N-MOSFETs in common-source topology and paired with appropriate TVS diodes. Its 65-V absolute maximum rating, adjustable OV threshold, and HGATE-controlled high-side FET enable clamping and disconnection during extended overvoltage events per ISO7637-2 Pulse 5a.

What is the role of the CAP and VS pins on the LM74800QDRRRQ1?

The CAP and VS pins form the charge pump interface: a 100-nF capacitor is placed between them to generate boosted gate drive voltage. The LM74800QDRRRQ1 sources up to 2.7 mA into CAP to sustain 12.2–13.2 V across CAP–VS, enabling reliable N-channel MOSFET drive across the full 3–65-V input range. This eliminates need for external high-voltage gate drivers.

Is the LM74800QDRRRQ1 pin-compatible with the LM74801QDRRRQ1?

Yes-the LM74800QDRRRQ1 and LM74801QDRRRQ1 share identical WSON-12 pinout, electrical ratings, and package dimensions. They differ only in internal control architecture: LM74800QDRRRQ1 uses linear regulation + comparator for reverse blocking, while LM74801QDRRRQ1 uses comparator-only. PCB layout and external components are fully interchangeable.

LM74800QDRRRQ1 Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
12-WFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
N+1 ORing Controller
FET Type:
N-Channel
Ratio - Input:Output:
1:1
Internal Switch(s):
No
Delay Time - ON:
2.6 µs
Delay Time - OFF:
500 ns
Current - Output (Max):
2.6A
Current - Supply:
413 µA
Voltage - Supply:
3V ~ 65V
Applications:
Redundant Power Supplies
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
12-WSON (3x3)

LM74800QDRRRQ1 FAQ

1.How can I place an order for LM74800QDRRRQ1 through Aetrix?

Please submit a Request for Quotation (RFQ) for LM74800QDRRRQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LM74800QDRRRQ1 reliable?

The price and inventory of LM74800QDRRRQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM74800QDRRRQ1 is usually 5 days.

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LM74800QDRRRQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LM74800QDRRRQ1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LM74800QDRRRQ1?

For technical support, including LM74800QDRRRQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM74800QDRRRQ1 requirements.

6.How does Aetrix verify that LM74800QDRRRQ1 is sourced from the original manufacturer or authorized distributors?

All LM74800QDRRRQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM74800QDRRRQ1 meets industry standards.

7.What is the process for return or replacement of LM74800QDRRRQ1?

All LM74800QDRRRQ1 units undergo pre-shipment inspection (PSI). If there is an issue with LM74800QDRRRQ1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LM74800QDRRRQ1 part is unused and in its original packaging.

Return procedure for LM74800QDRRRQ1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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