Texas Instruments LMG3410R050RWHR

Overview

LMG3410R050 from Texas Instruments is a 600-V, 50-mΩ integrated GaN power stage with monolithically integrated gate driver, overcurrent protection (latched), overtemperature protection, and UVLO. It delivers 34-A continuous drain current at 25°C, supports >100 V/ns slew rates, and enables high-density totem-pole PFC and industrial motor drives.

For engineers reviewing the LMG3410R050 datasheet, LMG3410R050 pinout, LMG3410R050 application, or LMG3410R050 equivalent, key selection considerations include its 8 mm × 8 mm QFN-32 package, adjustable 25–100 V/ns slew rate via RDRV, latched OCP response (<100 ns), and integrated -14 V negative gate supply for robust GaN turn-off.

Technical Context

The LMG3410R050 implements a Direct-Drive GaN architecture with an internal buck-boost converter generating VNEG (−14 V) for reliable gate control-eliminating external negative bias supplies. Its zero reverse recovery charge and ultra-low Coss (89 pF at 400 V) enable hard-switching at MHz frequencies without body-diode losses.

It integrates protection logic with <35 ns current fault detection, 165°C thermal shutdown with 25°C hysteresis, and independent UVLO on VDD (9.1 V turn-on). The 20 ns propagation delay (turn-on), 5.2 ns turn-on delay, and 2.9 ns rise time support precise timing in high-frequency half-bridge topologies.

Key Specifications

Pinout & Package

LMG3410R050 is housed in an 8.00 mm × 8.00 mm thermally enhanced QFN-32 package with exposed thermal pad (PAD) tied to SOURCE for low-inductance, low-thermal-resistance mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power stage applications.

Compared with LMG3411R050, the LMG3410R050 provides deterministic fault containment via latched shutdown, while GS66508T demands full external gate control infrastructure-making LMG3410R050 optimal for rapid, reliable, and compact GaN adoption in industrial power systems.

Availability

LMG3410R050 is available at Aetrix Electronics and suitable for high-density industrial motor drives, solar inverters, uninterruptible power supplies, and high-efficiency telecom PSUs requiring stable component supply across multi-year production cycles.

Supply support for LMG3410R050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of automotive- and industrial-grade reliability validation.

The LMG341xR050 product line was designed to simplify GaN adoption in high-voltage, high-frequency power conversion-delivering integrated driver, protection, and bias generation in a single QFN package for industrial, renewable energy, and computing power applications.

FAQ

What is the key difference between LMG3410R050 and LMG3411R050?

The LMG3410R050 implements latched overcurrent protection: once triggered, the device remains off until IN is held low ≥350 µs or VDD is cycled. In contrast, LMG3411R050 uses cycle-by-cycle OCP, automatically recovering each PWM cycle. Both share identical pinout, R_DS(on), thermal specs, and package-only fault behavior differs. This makes LMG3410R050 ideal for safety-critical shutdown scenarios where uncontrolled restart is unacceptable.

How does the LMG3410R050 achieve robust turn-off without an external negative supply?

The LMG3410R050 integrates an internal buck-boost DC-DC converter that generates a regulated −14 V VNEG rail referenced to SOURCE. This negative voltage is applied directly to the GaN gate during turn-off, ensuring strong depletion-mode control and immunity to >150 V/ns dV/dt transients. No external isolated supply or charge pump is needed-reducing BOM count and layout complexity while maintaining reliable GaN switching.

What is the role of the RDRV pin on the LMG3410R050?

The RDRV pin on the LMG3410R050 sets the gate drive strength and thus the drain slew rate (dv/dt) during turn-on. Connecting a resistor from RDRV to SOURCE selects the slew rate: 15 kΩ yields ~100 V/ns, 45 kΩ yields ~50 V/ns, and 150 kΩ yields ~25 V/ns. This allows designers to optimize EMI performance and switching loss without changing gate resistors or driver layout-enabling one hardware design to meet multiple regulatory or efficiency targets.

Can the LMG3410R050 operate in third-quadrant mode, and what are the implications?

Yes, the LMG3410R050 conducts in third-quadrant mode (source-to-drain) with a typical V_SD of 5.27 V at 10 A-significantly higher than silicon MOSFET body diodes. While usable for synchronous rectification, prolonged third-quadrant conduction causes high conduction loss. TI recommends minimizing third-quadrant duration via precise dead-time control or using complementary devices in half-bridge configurations to avoid excessive heating in the LMG3410R050.

What thermal management practices are recommended for the LMG3410R050 in high-power applications?

For sustained 34-A operation, the LMG3410R050 requires low-thermal-resistance PCB layout: the exposed thermal pad (PAD) must be connected to a large internal copper plane or external heatsink using ≥9 thermal vias (0.3-mm diameter, 0.5-mm pitch). With R_θJC(bot) = 1.0 °C/W, junction temperature rise is minimized when the bottom-side thermal path dominates. Avoid relying solely on top-side convection; ambient temperature must stay ≤125°C at the case to maintain safe T_j ≤150°C.