Texas Instruments LMG3410R050RWHT

Overview

LMG3410R050 from Texas Instruments is a 600-V, 50-mΩ integrated GaN power stage with monolithically embedded gate driver, overcurrent protection (latched), overtemperature shutdown, and UVLO on all supply rails. It delivers 34-A continuous drain current at 25°C, supports >100 V/ns slew rates, and enables MHz-class totem-pole PFC and high-density industrial power supplies.

For engineers reviewing the LMG3410R050 datasheet, LMG3410R050 pinout, LMG3410R050 application, or LMG3410R050 equivalent, this page provides verified technical context, confirmed pin functions, real-world switching performance data, thermal metrics, and validated alternative options for high-voltage GaN power stage selection.

Technical Context

The LMG3410R050 implements a Direct-Drive GaN architecture with an internal buck-boost converter generating –14 V (VNEG) for reliable gate turn-off and zero common-source inductance. Its integrated driver achieves 16 ns turn-on propagation delay and 32 ns turn-off propagation delay at 400 V VDS, with RDRV-adjustable slew rate (25–100 V/ns).

It features latched overcurrent protection triggering at 40.4–77.6 A within 35 ns, 165°C overtemperature trip with 25°C hysteresis, and dual-rail UVLO (VDD turn-on at 9.1 V, turn-off at 8.5 V). The device operates without external protection components and sustains >150 V/ns dv/dt immunity during hard-switching.

Key Specifications

Pinout & Package

LMG3410R050 uses an 8.00 mm × 8.00 mm QFN-32 package (RWH) with exposed thermal pad (PAD) tied to SOURCE. The package integrates low-inductance power and signal routing optimized for high dv/dt immunity and minimal gate loop inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power stage applications.

Compared with GS66508T and IPS65R045S7, the LMG3410R050 reduces system-level design risk by integrating driver, protection, and bias generation - eliminating gate loop sensitivity, reducing component count, and guaranteeing sub-100 ns OCP response without controller dependency.

Availability

LMG3410R050 is available at Aetrix Electronics and suitable for high-density industrial and consumer power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for LMG3410R050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with decades of reliability validation in automotive and industrial markets.

The LMG341x series was designed specifically for high-frequency, high-efficiency power conversion - targeting totem-pole PFC, server PSUs, and renewable energy systems where GaN's zero Q_rr and low C_oss deliver measurable system-level advantages.

FAQ

What is the key difference between LMG3410R050 and LMG3411R050?

The LMG3410R050 implements latched overcurrent protection: once triggered, the device remains off until IN is held low ≥350 µs or VDD is cycled. In contrast, LMG3411R050 uses cycle-by-cycle OCP, allowing automatic recovery each PWM cycle. Both share identical pinout, R_DS(on), thermal specs, and driver architecture - only fault behavior differs.

Does LMG3410R050 require an external negative voltage supply?

No. The LMG3410R050 integrates a buck-boost DC-DC converter that generates –14 V (VNEG) internally. This eliminates the need for an external isolated negative rail. Users connect only an external inductor (10 µH) and 2.2-µF output capacitor to BBSW and VNEG pins - no external bias IC or transformer is required.

How does the RDRV pin adjust slew rate in LMG3410R050?

The RDRV pin accepts a resistor to ground (15–150 kΩ) that sets the gate drive strength. A 15-kΩ resistor yields ~100 V/ns turn-on slew rate; 45 kΩ yields ~50 V/ns; 150 kΩ yields ~25 V/ns. This adjustment directly controls EMI profile and switching loss trade-offs without modifying gate resistance or layout - all within the IC's internal driver circuitry.

What thermal interface is required for LMG3410R050's exposed pad?

The LMG3410R050's thermal pad (PAD) must be soldered to a large copper area on the PCB and connected to SOURCE via ≥6 thermal vias (0.3-mm diameter, filled or capped). TI specifies R_θJC(bot) = 1.0 °C/W under these conditions. Failure to implement adequate thermal vias increases junction temperature by >25°C at 27-A continuous current, risking OTP shutdown.

Can LMG3410R050 operate without the LDO5V output connected?

Yes. The LDO5V output is optional and intended solely for powering external digital isolators. If unused, it may be left floating or bypassed with a 1-µF capacitor. The LMG3410R050's internal operation - including gate drive, protection, and VNEG generation - is fully independent of LDO5V loading or connection status.