Texas Instruments LMG3410R150RWHT

Overview

LMG3410R150 from Texas Instruments is a 600-V, 150-mΩ GaN power FET with integrated gate driver, overcurrent protection (latched), overtemperature shutdown, and negative turn-off rail generation. It delivers 20-ns propagation delay, adjustable 25–100-V/ns slew rate via RDRV pin, and operates with only a +12-V unregulated supply-enabling high-density totem-pole PFC and servo drive power stages.

For engineers reviewing the LMG3410R150 datasheet, LMG3410R150 pinout, LMG3410R150 application, or LMG3410R150 equivalent, this page provides verified technical context on GaN switching performance, fault response timing (<100 ns OCP), thermal derating (13.5 A @ 100°C), QFN-32 package layout constraints, and latched vs. cycle-by-cycle OCP selection criteria.

Technical Context

The LMG3410R150 implements a Direct-Drive GaN architecture with an internal buck-boost converter generating –14 V (VNEG) for reliable gate turn-off, eliminating external negative bias supplies. Its integrated driver eliminates common-source inductance and enables 100-V/ns drain slew rate immunity without external gate resistors.

It features a trimmed gate bias voltage compensating for GaN threshold variation, digital FAULT output with <50-ns current-fault detection, and UVLO on VDD (9.1 V turn-on), LDO5V, and VNEG rails. The device supports third-quadrant conduction but requires synchronous rectification to minimize losses due to its higher source-drain voltage drop (~4.5 V at 3 A).

Key Specifications

Pinout & Package

LMG3410R150 is housed in an 8.0 mm × 8.0 mm, 32-pin QFN (RWH) package with exposed thermal pad (PAD) tied to SOURCE. The package supports low-inductance layout critical for GaN performance and integrates all driver, protection, and bias circuitry internally.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power switch applications.

Compared with LMG3411R150, the LMG3410R150 offers deterministic fault lockout for safety-critical shutdowns, while GS66508T demands full external bias and protection design-increasing bill-of-materials cost and layout risk despite lower R_DS(on).

Availability

LMG3410R150 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, notebook PC adapters, and servo drive power stages requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for LMG3410R150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of reliability validation in automotive, industrial, and computing markets.

The LMG341xR150 product line was designed to simplify high-efficiency GaN adoption by integrating driver, protection, and bias generation-targeting high-density power conversion in PFC, server PSUs, and motor drives.

FAQ

What is the key functional difference between LMG3410R150 and LMG3411R150?

The LMG3410R150 implements latched overcurrent protection: upon fault detection, it shuts off permanently until the IN pin is held low for ≥350 µs or VDD is cycled. In contrast, the LMG3411R150 uses cycle-by-cycle OCP, allowing automatic recovery each PWM period. Both share identical R_DS(on), package, driver, and thermal specs-only the OCP behavior differs. This makes LMG3410R150 ideal for safety-critical shutdowns, while LMG3411R150 suits transient-overload tolerant systems.

Does LMG3410R150 require an external negative voltage supply?

No. The LMG3410R150 integrates an internal buck-boost DC-DC converter that generates –14 V (VNEG) from the +12-V VDD supply. This eliminates the need for external isolated negative bias rails or charge pumps. Users must connect an external inductor between BBSW and SOURCE, and bypass VNEG to SOURCE with a 1-µF capacitor-no additional negative supply components are required for proper GaN gate turn-off.

How is the slew rate adjusted on LMG3410R150, and what resistor values correspond to which rates?

The LMG3410R150's turn-on slew rate is set by connecting a resistor (RDRV) from Pin 30 (RDRV) to SOURCE. Per datasheet Figure 2, 15 kΩ yields ~100 V/ns, 45 kΩ yields ~50 V/ns, and 150 kΩ yields ~25 V/ns. The relationship is monotonic and linear across the 15–150 kΩ range. No external gate resistor is needed-the integrated driver adjusts drive strength directly based on RDRV value, enabling precise EMI/efficiency trade-off tuning without layout changes.

What is the maximum continuous drain current rating for LMG3410R150 at 100°C junction temperature?

The LMG3410R150 is rated for 13.5 A continuous drain current at T_J = 100°C, as specified in Section 6.3 (Recommended Operating Conditions). This derates from 17 A at 25°C due to R_DS(on) increase with temperature (see Figure 5). Sustained operation at this current requires effective thermal management-specifically, low R_θJC(bot) (1.4 °C/W) achieved via multiple vias under the thermal pad connected to a solid SOURCE copper plane.

Can LMG3410R150 operate in third-quadrant (source-to-drain) conduction, and what are the implications?

Yes, the LMG3410R150 conducts in third-quadrant mode (source-to-drain) like a body diode, with V_SD ≈ 4.5 V at 3 A (Section 6.5). However, unlike silicon MOSFETs, it has zero reverse recovery charge-reducing switching loss. Third-quadrant conduction should be minimized: it increases conduction loss and heating. For optimal performance, use synchronous rectification or dead-time control to avoid extended third-quadrant operation in half-bridge or totem-pole topologies.