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Texas Instruments LMG3411R050RWHR

Part No.:
LMG3411R050RWHR
Manufacturer:
Texas Instruments
Category:
Power Distribution Switches, Load Drivers
Package:
32-VQFN Exposed Pad
Datasheet:
AetrixLMG3411R050RWHR.pdf
Description:
SMART 50MOHM GAN FET WITH DRIV
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,209

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Product details

Overview

LMG3411R050 from Texas Instruments is a 600-V, 50-mΩ integrated GaN power stage with cycle-by-cycle overcurrent protection, direct-drive gate architecture, and internal buck-boost converter for negative turn-off bias. It delivers 20 ns propagation delay, 25–100 V/ns user-adjustable slew rate, and operates in high-density totem-pole PFC and industrial motor drives.

For engineers reviewing the LMG3411R050 datasheet, LMG3411R050 pinout, LMG3411R050 application, or LMG3411R050 equivalent, key selection considerations include its 32-pin QFN package, cycle-by-cycle OCP behavior (vs. latched OCP in LMG3410R050), RDRV-based slew control, fault status signaling, and integrated -14 V VNEG rail generation.

Technical Context

The LMG3411R050 implements a Direct-Drive GaN architecture using an internal silicon series FET and buck-boost converter to generate VNEG (–14 V) for reliable GaN turn-off-eliminating external negative bias supplies. Its gate driver is trimmed for threshold variation compensation and immune to >150 V/ns drain dv/dt.

It integrates three critical supply rails: 12-V VDD input, 5-V LDO5V output for isolators, and regulated VNEG for gate control. Protection includes <100 ns overcurrent response, UVLO on all supplies, and thermal shutdown at 165 °C with 25 °C hysteresis-enabling self-protected operation without external components.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating600 V maximum blocking voltage-supports 480 V AC line applications and surge-tolerant designs up to 720 V.
RDS(on)57 mΩ at 25 °C-enables low conduction loss in high-current, high-frequency topologies like totem-pole PFC.
Propagation Delay16 ns turn-on, 32 ns turn-off-enables stable MHz-class switching with precise timing control.
Slew Rate Range25–100 V/ns via RDRV resistor-allows EMI optimization while maintaining >150 V/ns dv/dt immunity.
OCP Response<100 ns detection + 35 ns fault assertion-prevents shoot-through and limits single-cycle energy during transients.
Thermal ResistanceRθJC(bot) = 1.0 °C/W-facilitates high-power dissipation via bottom thermal pad with multiple vias to PCB ground plane.
Fault SignalingActive-low push-pull FAULT pin-provides immediate system-level fault indication without external pull-up.

Pinout & Package

LMG3411R050 is housed in an 8.0 mm × 8.0 mm, 32-pin QFN package (RWH) with exposed thermal pad. The package supports high-current routing and low-inductance layout for GaN switching performance.

Pin/TerminalCircuit RoleDesign Meaning
DRAIN (1–11)Power transistor drain nodeHigh-side switch node; connects to bus voltage up to 600 V; multiple pins reduce current density and inductance.
SOURCE (12–16, 18–24)Power transistor source & signal groundCommon reference for gate drive, protection circuits, and thermal sink; tied directly to die attach pad.
VDD (27)+12 V unregulated supply inputPowers internal gate driver, LDO, and buck-boost converter; requires local 10 µF bypassing.
IN (31)CMOS-compatible gate inputNon-inverting logic input; must be held low ≥10 ns after LDO5V regulation to clear FAULT.
RDRV (30)Slew rate control terminalResistor-to-ground sets turn-on drive strength: 15 kΩ → 100 V/ns, 150 kΩ → 25 V/ns.
FAULT (32)Digital fault status outputPush-pull active-low signal indicating OCP, OTP, or UVLO fault; resets automatically per cycle in LMG3411R050.
LDO5V (25)5 V LDO outputSupplies up to 5 mA for external digital isolators; bypass with 1 µF capacitor for stability.
VNEG (26)Negative supply outputRegulated –14 V rail for GaN gate turn-off; bypass with 2.2 µF capacitor to SOURCE.
BBSW (28)Buck-boost switch nodeConnects external inductor between BBSW and SOURCE; enables internal VNEG generation.
LPM (29)Low-power mode enablePulling low disables buck-boost converter and reduces quiescent current to ~80 µA.

Key Features

FeatureDesign Value
Cycle-by-cycle overcurrent protectionEnables continuous operation under transient overloads without latch-up-critical for PFC and motor control where brief current peaks are normal.
User-adjustable slew rate (25–100 V/ns)Allows EMI compliance tuning without sacrificing switching speed or requiring external gate resistors.
Integrated –14 V VNEG generationEliminates need for isolated negative bias supply-reducing BOM count, layout complexity, and cost.
Zero common-source inductanceDirect-drive architecture removes parasitic inductance between gate driver and GaN gate-ensuring clean, ringing-free switching waveforms.
Digital fault status with push-pull outputProvides robust, noise-immune fault reporting compatible with MCU GPIOs-no external pull-up or level-shifting required.

Applications

Industrial Motor DrivesSolar Inverters

Use Scenario: High-efficiency 3-phase inverters for servo and pump drives operating at 20–100 kHz switching frequency.

IC Role / Device Role / Timing Role: Half-bridge high-side GaN power stage with integrated driver and cycle-by-cycle current limiting for torque ripple suppression.

Use Value: Enables >99% efficiency at 10 kW with reduced heatsink size and elimination of external gate bias circuitry.

Use Scenario: String-level DC/AC conversion in residential and commercial solar systems with MPPT tracking.

IC Role / Device Role / Timing Role: Active clamp flyback or totem-pole PFC stage handling 600 V DC input and delivering grid-synchronized AC output.

Use Value: Reduces switching losses by 80% vs. Si MOSFETs, enabling smaller magnetics and higher power density in compact enclosures.

Uninterruptible Power SuppliesHigh-Voltage Battery Chargers

Use Scenario: Online double-conversion UPS systems requiring fast dynamic response and zero transfer time during mains failure.

IC Role / Device Role / Timing Role: Bidirectional 600 V power stage in LLC resonant converter and inverter stages with real-time fault recovery.

Use Value: Cycle-by-cycle OCP prevents shutdown during inrush or short-circuit events-maintaining backup power continuity.

Use Scenario: Onboard chargers for EVs and energy storage systems charging 400–800 V battery packs from AC grid.

IC Role / Device Role / Timing Role: High-frequency totem-pole PFC front-end with adaptive slew control for EMI filtering reduction.

Use Value: Achieves >98.5% PFC efficiency at 3.3 kW/L volume, meeting IEC 61000-3-2 Class A harmonic limits without bulky filters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power stage applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
LMG3410R050Latched overcurrent protection instead of cycle-by-cycle; identical pinout, package, and electrical specs otherwise.Preferred for safety-critical systems requiring hard fault lockout (e.g., medical power supplies).Select LMG3410R050 when system-level fault handling mandates persistent shutdown until manual reset.
GaN Systems GS66508T650 V, 50 mΩ discrete GaN FET with external gate driver; no integrated protection or bias generation.Requires external negative bias supply, OCP sensing, and fault logic-increasing design complexity and board area.Choose GS66508T only when full custom gate drive timing or multi-rail bias control is required beyond LMG3411R050's integrated capabilities.

Compared with LMG3410R050, LMG3411R050 offers automatic fault recovery per PWM cycle-ideal for dynamic loads-while GS66508T demands full external support circuitry, increasing bill-of-materials and validation effort despite higher voltage margin.

Availability

LMG3411R050 is available at Aetrix Electronics and suitable for high-density industrial motor drives, solar inverters, uninterruptible power supplies, and high-voltage battery chargers requiring stable component supply and long-term production continuity.

Supply support for LMG3411R050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of reliability validation in automotive, industrial, and computing markets.

The LMG341x family was designed specifically for high-frequency, high-efficiency power conversion-targeting totem-pole PFC, server PSUs, and renewable energy inverters where GaN's zero reverse recovery and low capacitance deliver measurable system-level gains.

FAQ

What distinguishes LMG3411R050 from LMG3410R050?

The core distinction is overcurrent protection behavior: LMG3411R050 implements cycle-by-cycle current limiting, allowing automatic recovery each PWM cycle after fault clearance, whereas LMG3410R050 uses latched OCP requiring IN pin hold-low or VDD power cycle. All other specifications-including pinout, RDS(on), VDS, and thermal metrics-are identical for both LMG3411R050 and LMG3410R050.

How does the RDRV pin adjust slew rate in LMG3411R050?

The RDRV pin on LMG3411R050 accepts an external resistor to ground that sets the gate drive strength: 15 kΩ yields ~100 V/ns, 45 kΩ yields ~50 V/ns, and 150 kΩ yields ~25 V/ns. This resistor directly controls turn-on dv/dt without altering gate loop inductance or requiring external gate resistors-enabling EMI optimization while preserving fast turn-off characteristics.

Does LMG3411R050 require an external negative voltage supply?

No, LMG3411R050 does not require an external negative voltage supply. It integrates a buck-boost DC-DC converter that generates a regulated –14 V VNEG rail internally from the 12 V VDD input. Users connect an external inductor between BBSW and SOURCE and a 2.2 µF capacitor from VNEG to SOURCE to complete the bias supply.

What is the role of the FAULT pin on LMG3411R050?

The FAULT pin on LMG3411R050 is a push-pull, active-low digital output signaling overcurrent, overtemperature, or UVLO faults. Unlike latched versions, it clears automatically when the IN input goes low-enabling cycle-by-cycle recovery. It interfaces directly with MCU GPIOs and requires no external pull-up resistor due to its internal active drive.

Can LMG3411R050 operate without the LDO5V output connected?

Yes, LMG3411R050 can operate without loading the LDO5V output. The 5 V LDO is optional and intended solely to power external digital isolators or level shifters. If unused, the LDO5V pin should be left floating or bypassed with a 1 µF capacitor to SOURCE for stability-no load is required for core GaN switching functionality.

LMG3411R050RWHR Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Package/Case:
32-VQFN Exposed Pad
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Switch Type:
Load Switch
Number of Outputs:
1
Ratio - Input:Output:
1:1
Output Configuration:
High Side
Output Type:
N-Channel
Interface:
Logic, PWM
Voltage - Load:
480V (Max)
Voltage - Supply (Vcc/Vdd):
9.5V ~ 18V
Current - Output (Max):
12A
Rds On (Typ):
57mOhm
Input Type:
Non-Inverting
Features:
Bootstrap Circuit, 5V Regulated Output
Fault Protection:
Over Current, Over Temperature, UVLO
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-VQFN (8x8)

LMG3411R050RWHR FAQ

1.How can I place an order for LMG3411R050RWHR through Aetrix?

Please submit a Request for Quotation (RFQ) for LMG3411R050RWHR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LMG3411R050RWHR reliable?

The price and inventory of LMG3411R050RWHR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LMG3411R050RWHR is usually 5 days.

3.What payment methods are accepted for LMG3411R050RWHR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LMG3411R050RWHR transactions.

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LMG3411R050RWHR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LMG3411R050RWHR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LMG3411R050RWHR?

For technical support, including LMG3411R050RWHR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LMG3411R050RWHR requirements.

6.How does Aetrix verify that LMG3411R050RWHR is sourced from the original manufacturer or authorized distributors?

All LMG3411R050RWHR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LMG3411R050RWHR meets industry standards.

7.What is the process for return or replacement of LMG3411R050RWHR?

All LMG3411R050RWHR units undergo pre-shipment inspection (PSI). If there is an issue with LMG3411R050RWHR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LMG3411R050RWHR part is unused and in its original packaging.

Return procedure for LMG3411R050RWHR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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