Texas Instruments LMG3411R070RWHT

Overview

LMG3411R070 from Texas Instruments is a 600-V, 70-mΩ GaN power stage with integrated gate driver and cycle-by-cycle overcurrent protection, designed for high-frequency hard-switching in half-bridge topologies. It delivers 20 ns propagation delay, user-adjustable 25–100 V/ns slew rate, and operates with only a single +12 V unregulated supply - enabling ultra-dense totem-pole PFC and industrial motor drives.

For engineers reviewing the LMG3411R070 datasheet, LMG3411R070 pinout, LMG3411R070 application, or LMG3411R070 equivalent, key selection considerations include its cycle-by-cycle OCP behavior versus latched alternatives, QFN-32 thermal performance (0.5°C/W R_θJC(bot)), 150 V/ns dv/dt immunity, and integrated negative rail generation for robust GaN turn-off.

Technical Context

The LMG3411R070 implements a Direct-Drive GaN architecture with an internal buck-boost converter generating –14 V (VNEG) for reliable gate turn-off, eliminating external negative bias supplies. Its silicon series FET ensures safe startup and UVLO-controlled sequencing across all rails (VDD, IN, LPM).

It integrates three critical subsystems: a process-tuned gate driver with 20 ns t_pd,on, a 5-V LDO (LDO5V) capable of 5 mA for digital isolators, and fault logic delivering <50 ns current-fault response with programmable blanking via RDRV. Cycle-by-cycle OCP resets automatically when IN goes low, distinguishing it functionally from LMG3410R070.

Key Specifications

Pinout & Package

LMG3411R070 uses an 8.0 mm × 8.0 mm thermally enhanced QFN-32 package (RWH) with exposed thermal pad (PAD) tied to SOURCE. The package supports high-current routing via multiple SOURCE pins (12–16, 18–24) and low-inductance gate drive paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power stage applications.

Compared with LMG3410R070, LMG3411R070 offers automatic fault recovery per PWM cycle - critical for dynamic loads - while GS66508T demands full external support circuitry but allows independent optimization of driver strength and protection thresholds.

Availability

LMG3411R070 is available at Aetrix Electronics and suitable for high-density industrial and consumer power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable GaN sourcing.

Supply support for LMG3411R070 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of automotive-grade reliability validation and industrial qualification expertise.

The LMG341x family was developed to replace cascode GaN and silicon MOSFETs in high-frequency power conversion, targeting >1-MHz operation with integrated protection, simplified layout, and reduced system-level EMI.

FAQ

What distinguishes LMG3411R070 from LMG3410R070?

The LMG3411R070 implements cycle-by-cycle overcurrent protection, meaning the device shuts off during overcurrent events but automatically resumes normal switching once the IN pin goes low - ideal for transient-heavy applications like motor drives. In contrast, LMG3410R070 uses latched OCP and remains off until manually reset via IN low pulse (>350 µs) or VDD power cycle. All other electrical, thermal, and pinout specifications are identical between the two parts.

Does LMG3411R070 require an external negative voltage supply?

No. The LMG3411R070 integrates an internal buck-boost converter that generates a regulated –13.9 V rail (VNEG) for reliable GaN turn-off. This eliminates the need for external isolated supplies or charge pumps. Users must connect only a 22-µH inductor between BBSW and SOURCE, and a 2.2-µF capacitor from VNEG to SOURCE - no additional active circuitry is required for gate biasing.

How is slew rate adjusted on the LMG3411R070?

Slew rate on the LMG3411R070 is set by connecting a resistor (RDRV) from pin 30 (RDRV) to SOURCE. Values from 15 kΩ to 100 kΩ yield turn-on dv/dt from 100 V/ns down to 25 V/ns. This resistor directly controls gate drive strength without altering timing margins or requiring external gate resistors - enabling EMI tuning while preserving 20 ns propagation delay and <100 ns fault response.

Can LMG3411R070 be paralleled for higher current capacity?

Yes, the LMG3411R070 supports paralleling with identical units using matched gate drive paths and symmetrical PCB layout. Key requirements include individual RDRV resistors (to ensure consistent slew rates), dedicated VNEG bypass capacitors per device, and balanced DRAIN/SOURCE copper areas. TI's Application Report SLUA905 details layout guidelines, current sharing validation, and thermal derating curves for up to four parallel devices.

What thermal interface materials are recommended for LMG3411R070?

For optimal thermal performance, TI recommends soldering the exposed thermal pad (PAD) directly to a solid copper plane on the PCB using ≥6 thermal vias (0.3-mm diameter, filled or capped). No thermal interface material (TIM) is required between the package and board - the QFN-32 RWH design relies on solder joint conduction. For ambient temperatures above 85°C or power dissipation >30 W, forced airflow (≥200 LFM) over the top surface further reduces junction-to-ambient resistance.