Texas Instruments LMG3411R150RWHR

Overview

LMG3411R150 from Texas Instruments is a 600-V, 150-mΩ gallium nitride (GaN) power FET with integrated gate driver, overcurrent protection, and cycle-by-cycle current limiting. It delivers 20-ns propagation delay, adjustable 25–100-V/ns slew rate via RDRV pin, and operates with only a +12-V unregulated supply. It targets high-frequency totem-pole PFC and servo drive power stages where ultra-low switching loss and zero reverse recovery are critical.

For engineers reviewing the LMG3411R150 datasheet, LMG3411R150 pinout, LMG3411R150 application, or LMG3411R150 equivalent, key selection considerations include its integrated negative rail generation (VNEG), fault reporting via push-pull FAULT pin, thermal shutdown at 165°C, and compatibility with synchronous rectification in third-quadrant operation.

Technical Context

The LMG3411R150 implements a direct-drive GaN architecture using an internal buck-boost converter to generate –14-V VNEG for reliable turn-off, eliminating external negative bias supplies. Its gate driver is co-designed with the GaN die to suppress ringing and withstand >150-V/ns dv/dt immunity without false triggering.

It integrates three protection subsystems: cycle-by-cycle overcurrent detection with <50-ns response, overtemperature shutdown with 20°C hysteresis, and independent UVLO on VDD, IN, and LPM pins. The device uses a 32-pin QFN package with dual thermal pads (top and bottom) and zero common-source inductance design for minimal parasitic oscillation.

Key Specifications

Pinout & Package

The LMG3411R150 is housed in an 8.00 mm × 8.00 mm, 32-pin QFN package (RWH) with exposed thermal pad tied to SOURCE. It features dual-side thermal transfer: top-side via thermal pad and bottom-side copper land connected through multiple vias to inner ground planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power switch applications.

Compared with LMG3410R150RWHR, the LMG3411R150RWHR offers automatic fault recovery without controller intervention, improving system availability in transient-overload scenarios; versus GS66508T, it reduces design cycle time and board area by integrating driver, protection, and bias rails - at the cost of slightly higher R_DS(on).

Availability

LMG3411R150 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, notebook PC adapters, LED signage drivers, and servo drive power stages requiring stable component supply and long-term production continuity.

Supply support for LMG3411R150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with leadership in high-reliability GaN process development and qualification.

The LMG341xR150 product line was designed to replace silicon MOSFETs and cascode GaN solutions in high-frequency, high-efficiency power conversion, targeting applications demanding ultra-low switching loss, integrated protection, and simplified layout.

FAQ

What is the key functional difference between LMG3411R150 and LMG3410R150?

The LMG3411R150 implements cycle-by-cycle overcurrent protection, meaning the FAULT signal clears automatically when the IN pin transitions low, allowing immediate re-enablement in the next PWM cycle. In contrast, the LMG3410R150 uses latched OCP - once triggered, it remains off until IN is held low for ≥250 µs or VDD is cycled. Both share identical R_DS(on), thermal specs, pinout, and protection thresholds. This makes LMG3411R150 ideal for applications needing uninterrupted operation during transient overloads, such as servo drives or adaptive PFC controllers.

How does the LMG3411R150 generate its negative gate bias voltage?

The LMG3411R150 integrates an internal buck-boost DC-DC converter that generates a regulated –14-V VNEG output referenced to SOURCE. This negative rail is used directly to pull down the GaN gate during turn-off, ensuring robust blocking even under high dv/dt stress. The converter requires only one external inductor (10 µH) and one output capacitor (1 µF) connected between VNEG and SOURCE. No external negative supply or charge pump circuitry is needed - simplifying design and improving reliability compared to discrete GaN solutions.

What is the purpose of the RDRV pin on the LMG3411R150?

The RDRV pin on the LMG3411R150 allows adjustment of the gate turn-on drive strength by connecting an external resistor to SOURCE. A 15-kΩ resistor yields ~100-V/ns slew rate for fastest switching; 45-kΩ gives ~50-V/ns; and 150-kΩ reduces it to ~25-V/ns. This resistor-based control enables EMI optimization without modifying gate loop inductance or adding external gate resistors - preserving layout integrity while tuning switching behavior across operating conditions. The RDRV pin has no effect on turn-off timing or slew rate.

Can the LMG3411R150 operate without the LDO5V output being loaded?

Yes, the LMG3411R150 can operate without loading the LDO5V output. The internal 5-V LDO is designed to supply up to 5 mA for external digital isolators but remains functional even when unused. If LDO5V is not connected to any load, startup time decreases because no 0.1-µF bypass capacitor is required. However, if an external isolator is used, TI recommends placing a 0.1-µF ceramic capacitor close to the LDO5V pin to ensure stability and noise immunity - especially in high-noise motor drive or PFC environments where the LMG3411R150 is commonly deployed.

What thermal metrics define the LMG3411R150's cooling performance?

The LMG3411R150 specifies R_θJC(bot) = 1.4°C/W (junction-to-case, bottom), R_θJC(top) = 9.9°C/W (junction-to-case, top), and R_θJA = 28.6°C/W (junction-to-ambient, on 2s2p test board). These values reflect its dual thermal path: heat flows efficiently through the bottom thermal pad into PCB copper planes via multiple vias, while the top-side thermal pad supports additional convection or heatsink attachment. At T_j = 125°C, the device supports 6-A continuous drain current - derating linearly to 13.5 A at 100°C - making thermal design highly dependent on bottom-side copper area and via count, not just ambient airflow.