Texas Instruments LMG3411R150RWHT

Overview

LMG3411R150 from Texas Instruments is a 600-V, 150-mΩ gallium nitride (GaN) power FET with integrated gate driver, overcurrent protection, and cycle-by-cycle current limiting. It delivers 20-ns propagation delay, adjustable 25–100-V/ns slew rate via RDRV pin, and operates with only a +12-V unregulated supply. It targets high-frequency totem-pole PFC and servo drive power stages where low switching loss and zero reverse recovery are critical.

For engineers reviewing the LMG3411R150 datasheet, LMG3411R150 pinout, LMG3411R150 application, or LMG3411R150 equivalent, key selection criteria include its GaN-specific protection architecture (cycle-by-cycle OCP), integrated negative rail generation (VNEG), 8 mm × 8 mm QFN thermal performance, and direct-drive gate control eliminating external level shifters.

Technical Context

The LMG3411R150 implements a Direct-Drive GaN architecture using an internal silicon series FET and buck-boost converter to generate –14 V (VNEG) for reliable gate turn-off. Its gate driver is co-designed with the GaN die to eliminate common-source inductance and suppress V_DS ringing during 100-V/ns switching.

Protection is hardware-based and autonomous: overcurrent detection responds in <100 ns, UVLO guards all rails (VDD, LDO5V, VNEG), and OTP triggers at 165 °C with 20 °C hysteresis. The cycle-by-cycle OCP mode distinguishes LMG3411R150 from the latched LMG3410R150, enabling continued operation after transient overloads without full reset.

Key Specifications

Pinout & Package

LMG3411R150 uses an 8.00 mm × 8.00 mm, 32-pin QFN package (RWH) with exposed thermal pad. The package integrates source-connected die attach, low-inductance power loops, and optimized signal routing for GaN's high dv/dt immunity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power switch applications.

Compared with LMG3410R150, LMG3411R150 provides uninterrupted operation after transient overloads-critical for closed-loop servo control. Compared with GS66508T, LMG3411R150 reduces bill-of-materials count by integrating driver, protection, and bias generation, cutting PCB area by ~40%.

Availability

LMG3411R150 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, notebook PC adapters, LED signage systems, and servo drive power stages requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for LMG3411R150 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company designing analog ICs, embedded processors, and power management solutions for industrial, automotive, and communications markets.

The LMG341xR150 product line was developed to simplify high-density GaN adoption by integrating driver, protection, and bias generation into a single 8 mm × 8 mm QFN-targeting 100+ kHz totem-pole PFC, LLC, and motor drive applications.

FAQ

What is the key functional difference between LMG3411R150 and LMG3410R150?

The LMG3411R150 implements cycle-by-cycle overcurrent protection, allowing automatic recovery on the next PWM cycle after a fault, whereas the LMG3410R150 uses latched OCP requiring manual reset via IN pin hold-low or VDD cycling. Both share identical R_DS(on), thermal specs, pinout, and driver architecture-only the OCP response differs. This makes LMG3411R150 ideal for servo drives and PFC where transient overloads must not interrupt control loop continuity.

How does the LMG3411R150 generate its negative gate bias voltage?

The LMG3411R150 integrates an internal buck-boost DC-DC converter that generates –13.9 V (VNEG) referenced to SOURCE, used to actively pull down the GaN gate during turn-off. This eliminates need for external negative bias supplies. The converter requires only one external inductor (10 µH) and one output capacitor (1 µF) tied between VNEG and SOURCE. Startup completes in 650 µs after VDD exceeds UVLO.

Can the LMG3411R150 operate without the LDO5V output being loaded?

Yes-the LMG3411R150 can start up and operate normally even if the LDO5V output is unused or unloaded. The internal 5-V LDO is optional and intended for powering external digital isolators; omitting its 0.1-µF bypass capacitor actually reduces startup time. However, if LDO5V is used, it must be loaded ≤5 mA and bypassed with ≥0.1 µF ceramic capacitor to maintain regulation and noise immunity.

What is the purpose of the RDRV pin on the LMG3411R150?

The RDRV pin on the LMG3411R150 sets the gate drive strength-and thus the turn-on slew rate-by connecting an external resistor (15–150 kΩ) to SOURCE. Lower resistance yields faster slew rates (up to 100 V/ns), higher resistance slows switching (down to 25 V/ns) to reduce EMI. This adjustment is independent of load current and does not affect propagation delay, enabling precise EMI/efficiency trade-off tuning without changing layout or gate resistors.

Does the LMG3411R150 require external protection components such as TVS diodes or RC snubbers?

No-the LMG3411R150 integrates robust hardware protection including overcurrent (<100 ns response), overtemperature (165 °C trip), and UVLO on all rails (VDD, LDO5V, VNEG), making external protection components unnecessary for normal operation. Its 150-V/ns dv/dt immunity and transient overvoltage rating (720 V surge) further eliminate need for snubbers in well-laid-out designs. External TVS may still be considered for extreme system-level surge compliance (e.g., IEC 61000-4-5 Level 4).