Texas Instruments LMG3425R050RQZT

Overview

LMG3425R050RQZT from Texas Instruments is a 600V, 50 mΩ GaN power FET with integrated gate driver, cycle-by-cycle overcurrent protection (<100 ns response), 20–150 V/ns adjustable slew rate, and digital temperature PWM reporting. It operates from 7.5V–18V supply and enables high-density, high-efficiency hard-switching power converters such as server PSUs and telecom rectifiers.

For engineers reviewing the LMG3425R050RQZT datasheet, LMG3425R050RQZT pinout, LMG3425R050RQZT application, or LMG3425R050RQZT equivalent, this device delivers verified GaN performance with integrated protection, programmable switching dynamics, and real-time thermal feedback - critical for evaluating EMI-sensitive, high-frequency SMPS designs.

Technical Context

The LMG3425R050RQZT integrates a silicon-based gate driver with precision bias generation and a buck-boost converter (VNEG/BBSW) to drive the depletion-mode GaN FET. Its RDRV pin configures turn-on slew rate across 20–150 V/ns, directly tuning switching loss vs. EMI trade-offs in hard-switched topologies.

It implements robust fault handling including latched short-circuit protection (60–90 A threshold), overtemperature shutdown (175°C GaN junction), and VDD/VNEG UVLO monitoring. Unlike LMG3426R050 (ZVD) and LMG3427R050 (ZCD), the LMG3425R050RQZT lacks zero-voltage or zero-current detection outputs - confirmed by TI's device information table and pin function mapping.

Key Specifications

Pinout & Package

The LMG3425R050RQZT uses a 54-pin VQFN package (RQZ) measuring 12.00 mm × 12.00 mm with exposed thermal pad. The package features dual-source and dual-drain anchoring pins (NC1/NC2) and integrates GND, SOURCE, and thermal pad internally - requiring non-solder-mask-defined PCB pads per TI mechanical guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power switch applications.

Compared with LMG3422R050RQZT and LMG3426R050RQZT, the LMG3425R050RQZT offers identical core GaN switching performance and protection but excludes both ZVD and ZCD outputs - making it the optimal choice for hard-switched, cost-sensitive, or legacy-controlled power stages where soft-switching signals add no value.

Availability

LMG3425R050RQZT is available at Aetrix Electronics and suitable for server PSU, telecom rectifier, and solar inverter applications requiring stable component supply, long-term lifecycle assurance, and traceable GaN sourcing.

Supply support for LMG3425R050RQZT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with over 50 years of innovation in high-reliability power conversion.

The LMG342xR050 family was designed specifically for high-efficiency, high-power-density switch-mode power supplies - targeting next-generation data center, telecom infrastructure, and renewable energy systems where GaN advantages must be delivered with integrated protection and simplified system design.

FAQ

What is the maximum continuous drain current rating for the LMG3425R050RQZT?

The LMG3425R050RQZT supports 32 A RMS drain current under recommended operating conditions (T_J ≤ 125°C, V_DD = 12 V). Its 44 A RMS absolute maximum rating assumes optimized thermal management via the exposed thermal pad and proper PCB copper area - exceeding typical Si MOSFET capabilities at equivalent voltage class.

Does the LMG3425R050RQZT include zero-voltage or zero-current detection features?

No. The LMG3425R050RQZT does not include ZVD or ZCD functionality - confirmed by TI's Device Information table and Pin Functions section. Those features are exclusive to LMG3426R050RQZT (ZVD) and LMG3427R050RQZT (ZCD). The LMG3425R050RQZT retains the OC pin (Pin 50) and is intended for hard-switched applications.

How is temperature reported by the LMG3425R050RQZT, and what is its accuracy?

The LMG3425R050RQZT reports junction temperature via a 9 kHz PWM output (Pin 51), where duty cycle linearly encodes temperature: 0.3–6% at 25°C, 36–44% at 85°C, 59–70% at 125°C, and 82% at 150°C. Accuracy is ±5°C across –40°C to 150°C, validated per TI's Electrical Characteristics table and Typical Characteristics Figure 5-10.

What is the role of the VNEG and BBSW pins on the LMG3425R050RQZT?

VNEG (Pins 41–42) provides a regulated –14 V rail for GaN gate turn-off, while BBSW (Pin 43) drives an external inductor to generate that negative voltage. Together, they replace discrete negative bias generators - requiring only a 2.2 µF capacitor on VNEG and a 4.7 µH inductor on BBSW per TI's Recommended Operating Conditions.

Can the LMG3425R050RQZT be used as a drop-in replacement for silicon MOSFETs or SiC devices?

No - the LMG3425R050RQZT is not a pin-compatible drop-in replacement. It requires specific gate drive architecture (VNEG/BBSW), different layout practices (low-inductance source return, thermal pad soldering), and revised dead-time settings due to nanosecond-scale propagation delays. Direct substitution without redesign risks instability or failure.