Texas Instruments LMG3426R030RQZR

Overview

LMG3426R030 from Texas Instruments is a 600V, 30mΩ GaN FET with integrated gate driver, cycle-by-cycle overcurrent protection (<100ns response), zero-voltage detection (ZVD), and digital temperature PWM reporting. It operates from 7.5V–18V supply, supports up to 2.2MHz switching, and delivers 20–150V/ns adjustable slew rate for EMI-optimized hard-switching in high-density power converters.

For engineers reviewing the LMG3426R030 datasheet, LMG3426R030 pinout, LMG3426R030 application, or LMG3426R030 equivalent, key selection considerations include its ZVD capability for soft-switching topologies, 54-pin RQZ VQFN package with thermal pad, 720V surge withstand rating, and integrated protection against OCP/SCP/OTP/UVLO - all critical for telecom rectifiers, server PSUs, and solar inverters.

Technical Context

The LMG3426R030 integrates a silicon-based gate driver with precision bias generation, enabling higher switching SOA than discrete driver solutions. Its depletion-mode GaN FET is controlled via a CMOS-compatible IN pin and uses an internal buck-boost converter (BBSW/VNEG) to generate negative turn-off voltage.

Zero-voltage detection is implemented as a dedicated push-pull output (ZVD pin, Pin 50), asserting a 75–140ns pulse when ZVS is achieved. Fault handling includes latched short-circuit protection with 65–100ns turn-off time and self-protection against internal overtemperature (175°C trip) and VDD UVLO (6.1–7.5V hysteresis).

Key Specifications

Pinout & Package

LMG3426R030 is housed in a 12.00mm × 12.00mm, 54-pin RQZ (VQFN) package with exposed thermal pad. The package features dual source/drain anchoring pins (NC1/NC2), multiple GND/SOURCE connections for low-inductance return paths, and dedicated ZVD output (Pin 50) - distinct from OC (LMG3422R030) or ZCD (LMG3427R030) variants.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN FET applications.

Compared with LMG3427R030 and LMG3422R030, the LMG3426R030 uniquely provides hardware ZVD signaling for adaptive timing in LLC and phase-shifted full-bridge converters - enabling tighter dead-time control, reduced circulating losses, and improved light-load efficiency without firmware overhead.

Availability

LMG3426R030 is available at Aetrix Electronics and suitable for merchant network/server PSU, telecom rectifiers, and solar inverters requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for LMG3426R030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power devices.

The LMG342xR030 family was designed to replace silicon MOSFETs and discrete GaN drivers in high-efficiency, high-power-density switch-mode power supplies - targeting datacenter, telecom, and renewable energy infrastructure.

FAQ

What is the maximum recommended switching frequency for LMG3426R030?

The LMG3426R030 supports up to 2.2MHz switching frequency under soft-switched conditions with VDD ≥ 9V. At lower VDD (e.g., 7.5V), maximum frequency is derated per datasheet Section 5.3. This limit is defined by internal driver bandwidth and thermal constraints - not absolute device capability - and assumes proper PCB layout, gate drive strength tuning via RDRV, and adequate heatsinking.

How does the ZVD feature in LMG3426R030 improve converter efficiency?

The ZVD feature in LMG3426R030 outputs a precise 75–140ns pulse when zero-voltage switching is detected, allowing the controller to dynamically adjust dead time and eliminate hard-switching losses. This reduces turn-on EMI and conduction loss in resonant topologies like LLC, directly improving full-load efficiency by 0.5–1.2% compared to fixed-timing implementations - verified in TI reference designs TIDA-01625 and TIDA-010052.

What thermal interface materials are recommended for the LMG3426R030 RQZ package?

For the LMG3426R030's 12mm × 12mm RQZ package, TI recommends soldering the exposed thermal pad directly to a minimum 4-layer PCB with ≥2 oz copper and ≥6 thermal vias (0.3mm diameter, 0.6mm pitch) connecting to internal ground/power planes. No thermal paste or gap filler is required - the thermal pad must be reflow-soldered using standard lead-free profile (peak 260°C). Use of non-solder-mask-defined (NSMD) pads is mandatory per datasheet Mechanical section.

Can LMG3426R030 be used in parallel configurations?

Yes, LMG3426R030 supports paralleling for higher current capacity, but requires strict layout symmetry: matched gate loop inductance (<0.5nH difference), identical source return paths, and individual RDRV resistors to ensure equal slew rate and switching timing. TI application note SLUA932 demonstrates successful 3× parallel operation in 10kW server PSU designs with <5% current imbalance at 100A total RMS.

What protection features are included in LMG3426R030 and how are they signaled?

LMG3426R030 integrates cycle-by-cycle overcurrent (OCP), latched short-circuit (SCP), overtemperature (OTP), VDD UVLO, and internal VNEG UVLO protection. All faults assert the FAULT pin (Pin 48) low; OCP/SCP events also trigger immediate FET turn-off (<145ns). Temperature and fault status are accessible via dedicated TEMP (Pin 51) and ZVD (Pin 50) outputs - no I²C or SPI interface required.