Texas Instruments LMG3426R030RQZT

Overview

LMG3426R030 from Texas Instruments is a 600V, 30mΩ GaN FET with integrated gate driver, cycle-by-cycle overcurrent protection (<100ns response), zero-voltage detection (ZVD), and digital temperature PWM reporting. It operates from 7.5V–18V supply, supports up to 2.2MHz switching, and delivers 20–150V/ns adjustable slew rate for EMI-optimized hard-switching in high-density PSUs.

For engineers reviewing the LMG3426R030 datasheet, LMG3426R030 pinout, LMG3426R030 application, or LMG3426R030 equivalent, this device enables rapid adoption of GaN in telecom rectifiers, server PSUs, and solar inverters-where fast fault response, precise thermal monitoring, and ZVS-enabling timing signals are critical selection criteria.

Technical Context

The LMG3426R030 integrates a silicon-based gate driver with precision bias regulation, enabling robust 600V GaN FET operation without external level-shifting. Its internal buck-boost converter generates VNEG (–14V) for reliable depletion-mode GaN turn-off, while the RDRV pin sets drive strength to tune slew rate from 20V/ns to 150V/ns via external resistor.

ZVD functionality provides a 75–140ns pulse on the dedicated ZVD pin when zero-voltage switching is detected-enabling real-time synchronization in resonant topologies. Fault handling includes latched short-circuit protection, self-monitoring OTP/UVLO, and push-pull FAULT output with <100ns overcurrent response.

Key Specifications

Pinout & Package

LMG3426R030 uses a 54-pin VQFN (RQZ) package measuring 12.00mm × 12.00mm with exposed thermal pad. The low-inductance layout integrates DRAIN (pins 2–15), SOURCE (pins 18–40), and GND (pins 44, 45, 49) across multiple parallel terminals to minimize loop inductance and improve thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN FET applications.

Compared with LMG3427R030, the LMG3426R030 provides hardware ZVS timing for voltage-mode control, while GS66508T demands external circuitry for equivalent functionality-making LMG3426R030 optimal for rapid, high-reliability GaN adoption in telecom and server PSUs.

Availability

LMG3426R030 is available at Aetrix Electronics and suitable for merchant network/server PSU, telecom rectifier, and solar inverter applications requiring stable component supply, JEDEC JEP180 qualification, and long-term industrial lifecycle support.

Supply support for LMG3426R030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion solutions.

The LMG342x family was designed specifically for high-frequency, high-density switch-mode power converters-integrating GaN FETs, drivers, protections, and telemetry to eliminate design barriers in next-generation PSUs and inverters.

FAQ

What is the maximum recommended operating temperature for the LMG3426R030?

The LMG3426R030 has a maximum operating junction temperature of 150°C, with overtemperature shutdown triggered at 175°C. Its thermal PWM output encodes temperature from 25°C (0.3–6% duty) to 150°C (82% duty), enabling closed-loop thermal management. The RQZ package achieves 0.55°C/W junction-to-case thermal resistance, supporting high-power operation with proper heatsinking.

How does the ZVD feature in the LMG3426R030 differ from standard zero-voltage sensing circuits?

The LMG3426R030's ZVD feature is an on-die, hardware-accelerated detection block that outputs a 75–140ns pulse directly synchronized to actual ZVS events-without software latency or external comparators. Unlike discrete solutions, it measures internal V_DS dynamics with sub-ns timing accuracy and integrates seamlessly with the gate driver, enabling deterministic dead-time optimization in real time.

Can the LMG3426R030 be used in hard-switching topologies without ZVS?

Yes, the LMG3426R030 is qualified per JEDEC JEP180 for hard-switching topologies and withstands 720V surges during switching. Its 20–150V/ns slew rate adjustment via RDRV allows controlled ring suppression, and its 600V rating with 800V transient capability ensures robustness in non-resonant PFC and LLC primary-side designs-even without ZVS.

What is the function of the RDRV pin on the LMG3426R030, and how does it affect performance?

The RDRV pin on the LMG3426R030 sets gate drive strength by selecting internal current sources: tying to GND enables 150V/ns slew rate, connecting to LDO5V yields 100V/ns, and using 300kΩ resistor achieves 20V/ns. This direct hardware control allows EMI optimization and switching loss tuning without firmware changes-critical for meeting CISPR standards across varying loads.

Does the LMG3426R030 require external components for basic operation, and what are the minimum required?

Yes-the LMG3426R030 requires four minimum external components: a 2.2µF capacitor on VNEG, a 4.7µH inductor on BBSW, a pull-up resistor on IN (if driven open-drain), and an RDRV-to-GND resistor for slew rate setting. The integrated LDO5V (5V/25mA) and buck-boost converter eliminate need for auxiliary supplies, reducing bill-of-materials by up to seven components versus discrete GaN solutions.