Texas Instruments LMG3522R050RQSR

Overview

LMG3522R050 from Texas Instruments is a 650V, 50mΩ GaN-on-Si power FET with fully integrated gate driver, cycle-by-cycle overcurrent protection (<100ns response), digital temperature PWM reporting (9kHz fixed frequency), and 15–150V/ns adjustable slew rate. It operates from 7.5V–18V supply and delivers clean hard-switching performance in high-density server PSUs and telecom rectifiers.

For engineers reviewing the LMG3522R050 datasheet, LMG3522R050 pinout, LMG3522R050 application, or LMG3522R050 equivalent, key selection considerations include its 52-pin VQFN package with top-side cooling, integrated buck-boost converter for negative gate bias (VNEG), RDRV-based slew-rate tuning, and absence of zero-voltage detection (ZVD) - distinguishing it from LMG3526R050.

Technical Context

The LMG3522R050 integrates a silicon-based gate driver with precision internal gate bias generation, enabling robust 200V/ns hold-off and eliminating external bias rails. Its direct-drive architecture eliminates Miller capacitance sensitivity and supports up to 3.6MHz switching in hard-switched topologies.

Protection is implemented at silicon level: overcurrent/short-circuit faults trigger sub-100ns shutdown with latched fault signaling via FAULT and OC pins; internal UVLO monitors both VDD (6.4–7.6V threshold) and VNEG (–13.3 to –12.1V); thermal shutdown activates at 175°C GaN junction temperature with 30°C hysteresis.

Key Specifications

Pinout & Package

LMG3522R050 uses a 12mm × 12mm, 52-pin VQFN package (RQS) with exposed thermal pad. Electrical and thermal paths are physically separated: SOURCE and NC2 pins connect internally to the thermal pad, while DRAIN connects to NC1 anchors - minimizing power loop inductance and enabling top-side cooling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN FET applications.

Compared with LMG3526R050, LMG3522R050 removes ZVD functionality while retaining identical electrical specs and protection - making it optimal for cost-sensitive hard-switched applications. Against GS66508T, LMG3522R050 integrates driver, bias, protection, and thermal reporting, reducing bill-of-materials and improving reliability in high-volume server and telecom designs.

Availability

LMG3522R050 is available at Aetrix Electronics and suitable for server PSUs, telecom rectifiers, and solar inverters requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for LMG3522R050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of automotive-grade reliability validation and industrial qualification.

The LMG352x series was developed to replace silicon MOSFETs in high-frequency, high-efficiency power conversion - targeting datacenter, telecom, and renewable energy applications where power density and thermal management are critical.

FAQ

What is the maximum recommended drain current for continuous operation of the LMG3522R050?

The LMG3522R050 supports 32 A RMS drain current under recommended operating conditions. This value assumes proper PCB thermal design with top-side cooling, 0.68°C/W junction-to-case (top) thermal resistance, and ambient temperature ≤ 85°C. Exceeding 32 A RMS risks exceeding the 125°C maximum recommended junction temperature during sustained operation.

Does the LMG3522R050 include zero-voltage detection (ZVD) functionality?

No, the LMG3522R050 does not include zero-voltage detection. That feature is exclusive to the LMG3526R050 variant. The LMG3522R050 pinout omits the ZVD pin (Pin 48 on LMG3526R050 is designated OC on LMG3522R050), and its functional block diagram confirms absence of ZVD circuitry - making it intended for hard-switched topologies only.

How is slew rate adjusted on the LMG3522R050, and what resistor values correspond to specific rates?

Slew rate on the LMG3522R050 is set by connecting a resistor between RDRV (Pin 50) and SOURCE. A 0Ω connection yields 150 V/ns; 300 kΩ yields 15 V/ns; and tying RDRV to LDO5V gives 100 V/ns. The relationship is monotonic but non-linear - Figure 5-4 in the datasheet shows measured slew rate vs. RDRV resistance across temperature.

What protection features are implemented in hardware within the LMG3522R050?

The LMG3522R050 implements five hardware-level protections: cycle-by-cycle overcurrent (55 A threshold), latched short-circuit (80 A threshold), GaN junction overtemperature (175°C trip), VDD UVLO (6.4–7.6V window), and VNEG UVLO (–13.3 to –12.1V). All fault responses occur autonomously without MCU intervention and assert dedicated OC and FAULT outputs.

Can the LMG3522R050 be used in synchronous rectification or third-quadrant conduction applications?

Yes, the LMG3522R050 supports third-quadrant conduction with a typical source-drain voltage of 3.0–5.3 V at 15 A. Its ideal-diode mode control includes VT(3rd) threshold detection (±0.15 V) and zero-current detection (±0.2 A), enabling controlled body-diode replacement in LLC and phase-shifted full-bridge topologies - though ZVD feedback is unavailable.