Texas Instruments LMG3522R050RQST

Overview

LMG3522R050 from Texas Instruments is a 650V, 50mΩ GaN-on-Si power FET with fully integrated gate driver, cycle-by-cycle overcurrent protection (<100ns response), 15–150V/ns adjustable slew rate, and digital temperature PWM output. It operates from 7.5V–18V supply and delivers clean hard-switching performance in high-density server PSUs and telecom rectifiers.

For engineers reviewing the LMG3522R050 datasheet, LMG3522R050 pinout, LMG3522R050 application, or LMG3522R050 equivalent, this page provides verified package mapping (RQS VQFN-52), confirmed thermal metrics (RθJC(top) = 0.68°C/W), validated protection thresholds (OC trip: 45–65A), real-world slew-rate control via RDRV pin (0–500kΩ), and accurate SOA boundaries up to 50A/520V.

Technical Context

The LMG3522R050 implements a depletion-mode GaN HEMT controlled by an integrated silicon gate driver with programmable drive strength. Its direct-drive architecture eliminates external level-shifting and enables sub-5ns turn-on rise time (tr(on) = 2.5–4ns) and <60ns turn-off delay (td(off) = 44–60ns) under 10A load at 400V bus.

Protection is implemented at silicon-die level: overcurrent detection uses internal current-sense with <100ns fault-to-turnoff latency (toff(OC) = 110–170ns); overtemperature shutdown triggers at 175°C junction with 30°C hysteresis; UVLO monitors both VDD (6.0–7.6V threshold) and VNEG (–13.6 to –12.1V).

Key Specifications

Pinout & Package

LMG3522R050 uses a 12mm × 12mm top-side cooled RQS package (VQFN-52) with isolated thermal pad connected to SOURCE and NC2 pins. Electrical and thermal paths are physically separated to minimize power loop inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN FET applications.

Compared with LMG3526R050, the LMG3522R050 omits ZVD functionality while retaining identical switching performance, protection, and thermal behavior - making it optimal for hard-switched topologies like boost PFC. Against GS66508T, the LMG3522R050 reduces component count by integrating driver, protection, and sensing, lowering total system BOM cost and layout risk.

Availability

LMG3522R050 is available at Aetrix Electronics and suitable for server PSU primary switches, telecom rectifier half-bridges, and solar inverter DC optimizers requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for LMG3522R050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power devices.

The LMG352xR050 product line was designed specifically for high-density, high-efficiency switch-mode power converters - targeting merchant network/server PSUs, telecom infrastructure, and industrial motor drives where GaN's speed and efficiency advantages deliver measurable system-level gains.

FAQ

What is the maximum continuous drain current rating for LMG3522R050?

The LMG3522R050 is rated for 32A RMS drain current under recommended operating conditions (T_J ≤ 125°C, V_DD = 9–18V). Its absolute maximum pulsed drain current is 96A for t_p < 10µs, but sustained operation above 32A requires careful thermal design due to R_DS(on) increase with temperature. The device's 0.68°C/W RθJC(top) enables effective top-side cooling to maintain safe junction temperatures.

Does LMG3522R050 support zero-voltage switching (ZVS) detection?

No, the LMG3522R050 does not include zero-voltage detection (ZVD) functionality. That feature is exclusive to the LMG3526R050 variant, which adds a dedicated ZVD pin that outputs a pulse when ZVS is achieved. The LMG3522R050 retains all other specifications - identical R_DS(on), protection features, package, and slew-rate control - making it ideal for hard-switched topologies where ZVD feedback is unnecessary.

How is temperature reported by LMG3522R050?

The LMG3522R050 reports junction temperature via a fixed 9kHz PWM output on the TEMP pin (Pin 49). The duty cycle encodes temperature linearly: 0.3–6% at 25°C, 36–44% at 85°C, 58–70% at 125°C, and 82% at 150°C. This eliminates external temperature sensors and ADCs, allowing direct MCU GPIO capture and simple firmware decoding without calibration.

What is the purpose of the RDRV pin on LMG3522R050?

The RDRV pin (Pin 50) sets the gate drive strength to control slew rate from 15V/ns to 150V/ns. Connecting a resistor between RDRV and SOURCE selects the value: 0Ω yields 150V/ns, 300kΩ yields 15V/ns. This allows EMI optimization without changing PCB layout or gate resistors - critical for meeting CISPR-32 Class B emissions limits while maintaining high efficiency in high-frequency converters.

Can LMG3522R050 be used in place of a discrete GaN FET + driver solution?

Yes, the LMG3522R050 replaces both discrete GaN FETs and gate drivers in high-voltage power stages. Its integrated driver, protection (OCP, SCP, OTP, UVLO), and temperature reporting eliminate six to eight external components - reducing layout area by >30%, minimizing parasitic inductance, and improving timing consistency across temperature and unit-to-unit variation compared to discrete implementations.