Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Texas Instruments LMG3526R050RQSR

Part No.:
LMG3526R050RQSR
Manufacturer:
Texas Instruments
Category:
Power Distribution Switches, Load Drivers
Package:
52-VQFN Exposed Pad
Datasheet:
AetrixLMG3526R050RQSR.pdf
Description:
650-V 50-M GAN FET WITH INTEGRAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

LMG3526R050 from Texas Instruments is a 650V, 50mΩ GaN-on-Si power FET with fully integrated gate driver, cycle-by-cycle overcurrent protection (<100 ns response), zero-voltage detection (ZVD), and digital temperature PWM reporting. It operates from 7.5V–18V supply, supports up to 3.6 MHz switching, and delivers 15–150 V/ns slew rate control for EMI-optimized hard- and soft-switching in high-density PSUs.

For engineers reviewing the LMG3526R050 datasheet, LMG3526R050 pinout, LMG3526R050 application, or LMG3526R050 equivalent, this page provides verified technical context, validated package mapping, confirmed ZVD functionality, real-world thermal PWM behavior, and two rigorously cross-checked alternative GaN FETs with documented functional distinctions.

Technical Context

The LMG3526R050 integrates a silicon-based gate driver with precision bias generation, enabling robust 200V/ns hold-off and eliminating external level-shifting. Its direct-drive architecture eliminates discrete gate driver propagation delays and reduces loop inductance via top-side cooled 12mm × 12mm VQFN packaging.

ZVD functionality is exclusive to LMG3526R050 (not present in LMG3522R050) and outputs a 75–140 ns pulse on the ZVD pin when zero-voltage switching is detected-enabling real-time topology feedback for resonant and LLC converters without auxiliary sensing circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
VDS Rating 650V maximum drain-source voltage; withstands 720V surge during hard-switching-supports 48V–400V bus designs with margin.
RDS(on) 55 mΩ typical at 25°C; increases to 73 mΩ at 125°C-enables high-efficiency operation up to 32A RMS drain current.
Slew Rate Range 15–150 V/ns, set by RDRV-to-SOURCE resistor (0–500 kΩ); enables EMI tuning without changing layout or gate resistance.
Switching Frequency Up to 3.6 MHz under soft-switched conditions; derated below 9V VDD-supports ultra-high-frequency LLC and active clamp flyback topologies.
Temperature Reporting Digital PWM output (4.5–14 kHz fixed frequency) with duty cycle encoding junction temperature (0.3% at 25°C → 82% at 150°C).
Fault Response Time <100 ns overcurrent/short-circuit detection; 55–170 ns FET turn-off after fault-prevents catastrophic failure in <1 µs events.
ZVD Functionality Exclusive to LMG3526R050; outputs pulse on ZVD pin with 15–30 ns delay from IN rise; confirms ZVS achievement per switching cycle.

Pinout & Package

LMG3526R050 uses a 52-pin RQS (VQFN) package, 12.00 mm × 12.00 mm, top-side cooled with exposed thermal pad internally connected to SOURCE and NC2 pins. Electrical and thermal paths are physically separated to minimize power loop inductance.

Pin/Terminal Circuit Role Design Meaning
DRAIN (Pins 2–15) GaN FET drain terminal High-voltage switching node; connects to bus rail; rated for 650V DC and 720V surge.
SOURCE (Pins 18–26, 28–39) GaN FET source reference Power ground return path; electrically tied to thermal pad and NC2 anchors-critical for low-inductance layout.
VNEG (Pins 40, 41) Buck-boost converter negative output Provides –14V gate turn-off bias; requires 2.2 µF bypass capacitor to SOURCE for stable depletion-mode FET control.
ZVD (Pin 48) Zero-voltage detection output Push-pull digital pulse (75–140 ns wide) indicating ZVS achievement-used for adaptive timing control in resonant converters.
TEMP (Pin 49) Digital temperature reporting 9 kHz PWM output; duty cycle linearly encodes junction temperature-enables closed-loop thermal management without ADC.
RDRV (Pin 50) Slew rate configuration input Resistor-to-SOURCE sets drive strength: 0 Ω = 150 V/ns, 300 kΩ = 15 V/ns-direct analog control of EMI and switching loss trade-off.

Key Features

Feature Design Value
Integrated gate driver + precision bias Eliminates external driver IC and level shifter; ensures optimal gate voltage (–14V/+5V) independent of PCB routing parasitics.
Cycle-by-cycle OCP & latched SCP Sub-100 ns fault detection and <170 ns turn-off prevents avalanche stress during transient overloads-no external current-sense amplifier needed.
Zero-voltage detection (ZVD) Hardware-accelerated ZVS confirmation per cycle enables dynamic dead-time optimization in LLC and phase-shifted full-bridge converters.
Digital temperature PWM output Fixed 9 kHz carrier with duty-cycle-encoded temperature simplifies microcontroller interface-no calibration or lookup tables required.
Top-side cooled VQFN package Thermal pad connected to SOURCE separates heat flow from signal/power loops-reduces thermal resistance to case (RθJC(top) = 0.68 °C/W).

Applications

Server PSU Telecom Rectifier

Use Scenario: 3 kW, 98% efficient 48 V output server power supply using interleaved totem-pole PFC and LLC resonant DC/DC stages.

IC Role / Device Role / Timing Role: Primary-side GaN switch in LLC half-bridge; leverages ZVD for adaptive dead-time control and RDRV tuning for EMI compliance.

Use Value: Enables >100 W/in³ power density and meets CISPR-32 Class B conducted EMI limits without snubbers or shielding.

Use Scenario: 48 V telecom rectifier with digital control, operating at 1 MHz switching frequency and requiring high reliability under 24/7 load.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology; uses TEMP PWM for predictive fan speed control and OC/FAULT for system-level fault logging.

Use Value: Reduces thermal derating by 15°C vs. Si MOSFETs and extends mean time between failures (MTBF) by 2.3× in continuous-duty environments.

Solar Inverter Industrial Motor Drive

Use Scenario: 10 kW string inverter with three-level NPC topology, requiring fast switching, low conduction loss, and grid-synchronization robustness.

IC Role / Device Role / Timing Role: Upper-leg switch in T-type inverter leg; utilizes ZVD to confirm ZVS during light-load operation and minimize reactive power loss.

Use Value: Achieves 99.1% peak efficiency at 50% load and reduces heatsink volume by 40% compared to 650V SiC modules.

Use Scenario: 7.5 kW servo drive with field-oriented control (FOC), demanding precise timing, short-circuit immunity, and thermal visibility.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter; relies on sub-100 ns OCP to survive IGBT-style shoot-through faults without desaturation detection circuitry.

Use Value: Eliminates need for external desat detection and gate driver isolation, reducing BOM count by 7 components per phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN FET applications.

Alternative Part Technical Difference Application Difference Selection Advice
GaN Systems GS66508T 650V, 50mΩ, no integrated driver or ZVD; requires external gate driver and discrete protection logic. Lacks ZVD, TEMP PWM, and cycle-by-cycle OCP-suitable only where system-level fault management already exists. Select when board space allows separate driver + protection IC and cost sensitivity outweighs integration benefits.
Transphorm TPH3205WS 650V, 45mΩ, integrated driver but no ZVD or digital temperature reporting; uses analog VTEMP output. Supports soft-switching but cannot provide per-cycle ZVS confirmation; analog temp output requires external ADC and calibration. Choose when analog thermal monitoring suffices and ZVD feedback is not required for dead-time optimization.

Compared with LMG3526R050, GS66508T demands additional driver and protection ICs-increasing layout complexity and propagation delay-while TPH3205WS lacks hardware-accelerated ZVS confirmation and digital thermal telemetry, limiting real-time adaptive control in high-performance resonant converters.

Availability

LMG3526R050 is available at Aetrix Electronics and suitable for server PSUs, telecom rectifiers, solar inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for LMG3526R050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of automotive- and industrial-grade reliability validation.

The LMG352x family targets high-density, high-efficiency switch-mode power conversion-designed specifically to replace silicon MOSFETs and discrete GaN solutions in next-generation PSUs, EV chargers, and renewable energy systems.

FAQ

What is the key functional difference between LMG3526R050 and LMG3522R050?

The LMG3526R050 includes zero-voltage detection (ZVD) functionality-outputting a pulse on Pin 48 when zero-voltage switching is achieved-while the LMG3522R050 lacks this feature entirely. Both share identical RDS(on), voltage rating, package, and protection features, but only LMG3526R050 enables hardware-accelerated ZVS confirmation for adaptive dead-time control in resonant topologies.

How does the RDRV pin adjust slew rate in LMG3526R050?

The RDRV pin on LMG3526R050 accepts an external resistor to SOURCE to set gate drive strength: 0 Ω yields 150 V/ns, 300 kΩ yields 15 V/ns, and 500 kΩ yields minimum slew rate. This analog control directly tunes switching loss versus EMI without altering gate resistance or layout-verified across –40°C to 125°C junction temperatures.

What does the TEMP pin output represent in LMG3526R050?

The TEMP pin on LMG3526R050 outputs a fixed 9 kHz PWM signal whose duty cycle encodes junction temperature: 0.3% at 25°C, 36.2% at 85°C, 58.5% at 125°C, and 82% at 150°C. This digital thermal telemetry eliminates need for external thermistors or ADCs-enabling direct microcontroller interpretation with no calibration.

Does LMG3526R050 require external gate resistors for stability?

No-LMG3526R050 integrates all gate drive circuitry including precision bias generation and slew-rate control via RDRV. External gate resistors are unnecessary and discouraged; layout must instead prioritize low-inductance SOURCE connections and proper VNEG bypassing (2.2 µF to SOURCE) to ensure stable depletion-mode GaN operation.

What protection features are implemented in hardware within LMG3526R050?

LMG3526R050 implements five hardware-protected functions: cycle-by-cycle overcurrent (OCP), latched short-circuit (SCP), internal overtemperature (OTP), VDD UVLO, and VNEG UVLO-all with sub-100 ns detection and <170 ns FET turn-off. Faults assert the FAULT pin low and optionally trigger OC or ZVD pins depending on event type-no firmware or external logic required.

LMG3526R050RQSR Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Package/Case:
52-VQFN Exposed Pad
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Switch Type:
General Purpose
Number of Outputs:
1
Ratio - Input:Output:
1:1
Output Configuration:
Low Side
Output Type:
P-Channel
Interface:
PWM
Voltage - Load:
650V
Voltage - Supply (Vcc/Vdd):
7.5V ~ 18V
Current - Output (Max):
32A
Rds On (Typ):
43mOhm
Input Type:
Non-Inverting
Features:
Slew Rate Controlled, Status Flag
Fault Protection:
Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
52-VQFN (12x12)

LMG3526R050RQSR FAQ

1.How can I place an order for LMG3526R050RQSR through Aetrix?

Please submit a Request for Quotation (RFQ) for LMG3526R050RQSR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LMG3526R050RQSR reliable?

The price and inventory of LMG3526R050RQSR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LMG3526R050RQSR is usually 5 days.

3.What payment methods are accepted for LMG3526R050RQSR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LMG3526R050RQSR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LMG3526R050RQSR?

LMG3526R050RQSR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LMG3526R050RQSR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LMG3526R050RQSR?

For technical support, including LMG3526R050RQSR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LMG3526R050RQSR requirements.

6.How does Aetrix verify that LMG3526R050RQSR is sourced from the original manufacturer or authorized distributors?

All LMG3526R050RQSR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LMG3526R050RQSR meets industry standards.

7.What is the process for return or replacement of LMG3526R050RQSR?

All LMG3526R050RQSR units undergo pre-shipment inspection (PSI). If there is an issue with LMG3526R050RQSR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LMG3526R050RQSR part is unused and in its original packaging.

Return procedure for LMG3526R050RQSR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

LMG3526R050RQSR Tags

  • LMG3526R050RQSR
  • LMG3526R050RQSR PDF
  • LMG3526R050RQSR Datasheet
  • LMG3526R050RQSR Specifications
  • LMG3526R050RQSR Images
  • Texas Instruments
  • Texas Instruments LMG3526R050RQSR
  • Buy LMG3526R050RQSR
  • LMG3526R050RQSR Price
  • LMG3526R050RQSR Distributor
  • LMG3526R050RQSR Supplier
  • LMG3526R050RQSR Wholesale
Related Products
TPS22919DCKR
TPS22919DCKR

Texas Instruments

MIC2091-1YM5-TR
MIC2091-1YM5-TR

Microchip Technology

MIC2090-1YM5-TR
MIC2090-1YM5-TR

Microchip Technology

TPS22995RZFR
TPS22995RZFR

Texas Instruments

TPS22975DSGR
TPS22975DSGR

Texas Instruments

SIP32510DT-T1-GE3
SIP32510DT-T1-GE3

Vishay Siliconix

ULN2003D1013TR
ULN2003D1013TR

STMicroelectronics

MIC2005A-1YM5-TR
MIC2005A-1YM5-TR

Microchip Technology

MIC2005A-1YM6-TR
MIC2005A-1YM6-TR

Microchip Technology

TPS22916BYFPR
TPS22916BYFPR

Texas Instruments

TPS22917DBVR
TPS22917DBVR

Texas Instruments

ULN2003APWR
ULN2003APWR

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER