Texas Instruments LMG3612REQR

Overview

LMG3612REQR from Texas Instruments is a 650-V, 120-mΩ gallium nitride (GaN) power FET with integrated gate driver, overtemperature protection, and programmable turn-on slew-rate control. It operates as a high-voltage, low-R_DS(on) switching element in off-line SMPS topologies including LLC resonant converters, delivering 9.3-A continuous drain current at 125°C junction temperature in an 8 mm × 5.3 mm QFN package.

For engineers reviewing the LMG3612REQR datasheet, LMG3612REQR pinout, LMG3612REQR application, or LMG3612REQR equivalent, key selection considerations include its GaN-specific switching capability (800-V transient ring voltage), four-step slew-rate programmability via RDRV, open-drain FLT fault reporting, 55-μA AUX quiescent current, and compatibility with industry-standard LLC controllers such as UCC256602.

Technical Context

The LMG3612REQR integrates a 650-V GaN FET and driver in a single die-on-package architecture, eliminating external gate-drive loop inductance to achieve >150 V/ns common-mode transient immunity (CMTI). Its turn-on delay time ranges from 23 ns (fastest slew setting) to 107 ns (slowest), while turn-off timing remains fixed at 33 ns delay and 21 ns fall time - independent of RDRV configuration.

Protection logic includes under-voltage lockout (UVLO) with 9.3-V nominal trip and 250-mV hysteresis, plus overtemperature detection with 165°C positive-going threshold and 20°C hysteresis, reported via active-low open-drain FLT pin. The device supports burst-mode operation down to 55 μA AUX quiescent current and enables ZVS-compatible switching through adjustable dV/dt control.

Key Specifications

Pinout & Package

LMG3612REQR uses an 8 mm × 5.3 mm, 38-pin VQFN package (REQ) with exposed thermal pad (PAD) electrically tied to source (S), analog ground (AGND), and NC2 pins. Thermal pad must be soldered to non-solder-mask-defined PCB landing pad for optimal heat dissipation and electrical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power switch applications.

Compared with GS66508T and TPH3205WS, the LMG3612REQR delivers complete system integration - combining driver, protection, and programmable dV/dt in one package - reducing bill-of-materials, PCB area, and qualification risk for high-volume AC/DC power supplies.

Availability

LMG3612REQR is available at Aetrix Electronics and suitable for AC/DC USB wall chargers, television power supplies, and LED drivers requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing for production ramp.

Supply support for LMG3612REQR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog, embedded processing, and power management technologies with over 50 years of innovation in high-reliability power conversion solutions.

The LMG3612REQR belongs to TI's GaN power stage portfolio, designed specifically to accelerate adoption of gallium nitride in high-efficiency, high-density off-line power supplies - targeting USB PD, consumer electronics, and industrial auxiliary power applications.

FAQ

What is the maximum surge voltage rating for the LMG3612REQR?

The LMG3612REQR supports a 720-V surge drain-source voltage (V_DS(surge)) and withstands transient ringing peaks up to 800 V (V_{DS(tr)(surge)}) during rare input surges. This exceeds its 650-V rated V_DS and enables robust operation in unregulated off-line applications where voltage spikes occur during line transients or lightning events. The 800-V transient rating reflects GaN's inherent breakdown margin beyond its datasheet nameplate voltage.

How does the RDRV pin configure slew rate on the LMG3612REQR?

The RDRV pin on the LMG3612REQR sets one of four discrete turn-on slew rates (17–125 V/ns) by connecting an external resistor between RDRV and AGND. At AUX power-up, the device samples this resistance once to determine the setting - open circuit selects the slowest (17 V/ns), while shorting RDRV to AGND selects the fastest (125 V/ns). The configuration is latched and remains fixed until next power cycle; no dynamic adjustment is supported during operation.

Does the LMG3612REQR require a separate gate driver IC?

No, the LMG3612REQR does not require a separate gate driver IC. It integrates a high-speed, low-propagation-delay gate driver optimized for its internal GaN FET, eliminating external driver components, level shifters, and bootstrap networks. The IN pin accepts standard logic-level PWM signals directly from controllers like UCC256602, and the driver regulates gate voltage to maintain optimal R_DS(on) across temperature and process variation.

What is the role of the FLT pin on the LMG3612REQR?

The FLT pin on the LMG3612REQR is an active-low, open-drain output that asserts during overtemperature protection - pulling low when junction temperature exceeds 165°C. It is the sole fault reporting mechanism on the device and requires an external pull-up resistor to AUX or system rail. FLT de-asserts after temperature falls below 145°C (20°C hysteresis), enabling automatic recovery without controller intervention if thermal conditions normalize.

Can the LMG3612REQR operate in zero-voltage switching (ZVS) topologies?

Yes, the LMG3612REQR is explicitly designed for ZVS operation in resonant topologies such as LLC converters. Its fast, controllable turn-on transition (23–107 ns delay) and low output charge (Q_OSS = 28.3 nC) minimize third-quadrant conduction losses during soft-switching transitions. In the referenced 280-W LLC application with UCC256602, the LMG3612REQR achieves ZVS across full load range, contributing to 93% peak efficiency and reduced EMI generation.