Texas Instruments LMG3616REQR

Overview

LMG3616REQR from Texas Instruments is a 650-V, 270-mΩ gallium nitride (GaN) power FET with integrated gate driver, overtemperature protection, and programmable turn-on slew rate control. It operates with 10–26 V AUX supply, delivers ≤3.2 A continuous drain current, and features 23–77 ns turn-on delay depending on slew-rate setting. It targets high-density AC/DC converters such as USB wall chargers and TV auxiliary supplies.

For engineers reviewing the LMG3616REQR datasheet, LMG3616REQR pinout, LMG3616REQR application, or LMG3616REQR equivalent, key selection criteria include its 650-V GaN breakdown margin (800 V surge), adjustable EMI-optimized slew rates (20–150 V/ns), open-drain FLT fault reporting, 55 µA AUX quiescent current, and 8 mm × 5.3 mm 38-pin VQFN thermal package.

Technical Context

The LMG3616REQR integrates a GaN FET and driver in a single die-on-package architecture, eliminating external gate loop inductance and enabling >150 V/ns slew rates with controlled ringing. Its RDRV pin selects one of four discrete turn-on slew rates via external resistor, independent of turn-off timing (32 ns fixed td(off)).

Protection is implemented at silicon level: under-voltage lockout (UVLO) activates at 8.9–9.7 V AUX, while overtemperature detection triggers at 165°C with 20°C hysteresis and reports via active-low open-drain FLT. The device supports zero-voltage switching (ZVS) and discontinuous-conduction mode (DCM) topologies without requiring external bootstrap or level-shift circuitry.

Key Specifications

Pinout & Package

LMG3616REQR uses an 8 mm × 5.3 mm 38-pin VQFN package with exposed thermal pad (PAD), optimized for high-power density PCB layouts. Thermal pad is internally connected to source (S), analog ground (AGND), and NC2 pins, and must be soldered to a non-solder-mask-defined copper pour for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power FET applications.

Compared with GS66508T and TPH3205WS, LMG3616REQR uniquely combines driver integration, four-point slew-rate control, and open-drain FLT reporting in a single 8 mm × 5.3 mm package-reducing system-level component count and simplifying thermal/fault management in compact AC/DC designs.

Availability

LMG3616REQR is available at Aetrix Electronics and suitable for USB-C wall chargers, TV auxiliary power supplies, and gaming laptop adapters requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for LMG3616REQR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management technologies, with leadership in high-reliability GaN solutions for power conversion.

The LMG3616REQR belongs to TI's high-voltage GaN power stage family, designed specifically for high-frequency, high-efficiency AC/DC and DC/DC converters targeting consumer, industrial, and enterprise power applications.

FAQ

What is the maximum continuous drain current rating for the LMG3616REQR?

The LMG3616REQR supports ±3.2 A continuous drain current (ID(cnts)) under recommended operating conditions (TJ ≤ 125°C, VAUX = 10–26 V). This rating accounts for thermal limits in the 8 mm × 5.3 mm VQFN package with proper PCB thermal design. Peak pulsed current is 10.7 A for <10 µs pulses, but sustained operation must remain within the continuous limit to avoid junction overheating.

How does the RDRV pin configure turn-on slew rate on the LMG3616REQR?

The RDRV pin on the LMG3616REQR sets one of four discrete turn-on slew rates (20/50/75/150 V/ns) by connecting an external resistor between RDRV and AGND. Resistance values of ~120 kΩ, 47 kΩ, 22 kΩ, or 5.6 kΩ select settings 0–3 respectively; open-circuit and short-circuit are valid for slowest and fastest settings. Configuration occurs once at AUX power-up and remains fixed during operation.

Does the LMG3616REQR support zero-voltage switching (ZVS) topologies?

Yes, the LMG3616REQR is explicitly designed for ZVS operation in resonant topologies like LLC. Its fast turn-on delay (as low as 23 ns), low QOSS (14 nC), and programmable slew rate enable clean ZVS transitions across wide load ranges. TI's reference design with UCC25660 confirms reliable ZVS down to 10% load in 140-W LLC converters using LMG3616REQR.

What protection features are implemented in the LMG3616REQR?

The LMG3616REQR integrates under-voltage lockout (UVLO) that disables switching if AUX drops below 8.9 V, and overtemperature protection that asserts the FLT pin at 165°C junction temperature. No overcurrent or overvoltage protection is implemented internally-the device relies on system-level controllers for those functions. FLT is the sole hardware fault indicator and is open-drain active-low.

Can the LMG3616REQR replace silicon MOSFETs in existing 650-V designs without layout changes?

No-direct replacement is not recommended. While the LMG3616REQR shares the same 650-V rating, its 38-pin VQFN package, integrated driver, and different gate drive characteristics (e.g., IN pin logic thresholds, RDRV configuration) require PCB layout revision, gate loop optimization, and controller timing adjustment. TI provides migration guides, but LMG3616REQR is intended for new GaN-optimized designs-not drop-in silicon swaps.