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Texas Instruments LMV711IDCKR

Part No.:
LMV711IDCKR
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixLMV711IDCKR.pdf
Description:
IC OPAMP GP 1 CIRCUIT SC70-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,354

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Product details

Overview

LMV711IDCKR from Texas Instruments is a single, low-power, rail-to-rail input/output (RRIO) operational amplifier in SC-70-6 package, featuring 5 MHz gain bandwidth, 5 V/µs slew rate, 0.4 mV typical input offset voltage, and active shutdown with <10 µs turn-on time-designed for precision signal conditioning in battery-powered RF power control circuits.

For engineers reviewing the LMV711IDCKR datasheet, LMV711IDCKR pinout, LMV711IDCKR application, or LMV711IDCKR equivalent, this page delivers verified electrical specifications, SC-70-6 terminal mapping, real-world use cases in GSM/CDMA power amp control and AGC loops, and two validated alternative op-amps with documented functional and interface differences.

Technical Context

The LMV711IDCKR employs BiCMOS input stage architecture enabling rail-to-rail input common-mode range (–0.2 V to 5.2 V at 5 V supply) and rail-to-rail output swing into 600 Ω load. Its internal Class AB output stage delivers ±25 mA sourcing/sinking capability while maintaining stability under capacitive loads.

Shutdown functionality is implemented via dedicated SHDN pin (pin 5), asserting logic-low disables amplifier output and reduces ICC to 0.2 µA typical-enabling rapid power cycling in time-critical wireless subsystems without external sequencing circuitry.

Key Specifications

Parameter Value and Actual Design Meaning
Supply Voltage 2.7 V to 5 V - supports dual-cell Li-ion and single-cell alkaline/battery systems without LDO pre-regulation.
Gain Bandwidth Product 5 MHz - enables stable closed-loop operation up to 100 kHz with ≥60° phase margin into 10 kΩ//100 pF loads.
Slew Rate 5 V/µs - ensures ≤200 ns settling to 0.1% for 2 V step inputs, critical for fast AGC response in CDMA transceivers.
Input Offset Voltage 0.4 mV typ, 3 mV max - minimizes DC error in precision current-sense feedback paths for PA bias control.
Shutdown Current 0.2 µA typ - reduces system standby power by >99.9% versus active mode (1.7 mA), extending battery life in idle intervals.
Output Drive ±25 mA into 600 Ω - directly drives RF power detector diodes or DAC reference buffers without external gain stages.
Input Voltage Noise 20 nV/√Hz at 1 kHz - preserves SNR in low-level RF envelope detection and temperature compensation circuits.

Pinout & Package

LMV711IDCKR uses SC-70-6 (DCK) package: 2.0 mm × 1.25 mm footprint, 0.65 mm pitch, 0.9 mm max height - optimized for space-constrained mobile RF front-end modules.

Pin/Terminal Circuit Role Design Meaning
1 OUT Amplifier output node - rail-to-rail swing into 600 Ω, capable of sourcing/sinking 25 mA for direct interface to RF detector diodes.
2 VCC− Negative supply rail - accepts ground or negative bias; input common-mode extends 200 mV beyond this rail.
3 IN+ Non-inverting input - high-impedance BiCMOS node (4 pA bias current) for precision sensor or reference signal routing.
4 VCC+ Positive supply rail - operates from 2.7 V to 5 V; PSRR >70 dB ensures immunity to digital supply noise.
5 SHUTDOWN Dedicated enable control - logic-high (>2 V) enables amplifier; logic-low (<0.8 V) forces output high-impedance and cuts ICC to 0.2 µA.
6 IN− Inverting input - matched to IN+ for <3 mV offset; used in closed-loop configurations for PA bias current regulation.

Key Features

Feature Design Value
Rail-to-rail input and output Enables full dynamic range utilization across 2.7–5 V supplies - eliminates level-shifting components in single-supply RF detector interfaces.
Active shutdown with fast wake-up <10 µs turn-on time allows synchronous power gating with TDMA burst timing, reducing average current in GSM/GPRS transmit slots.
High output current drive ±25 mA capability supports direct driving of RF power detector diodes and low-impedance DAC reference buffers without external transistors.
Low input offset voltage 0.4 mV typical offset ensures <0.5% error in closed-loop PA bias current control at 100 mA setpoint - critical for EVM compliance.
Wide input common-mode range Operates with inputs 200 mV beyond rails - accommodates ground-referenced sensors and rail-splitter references in compact RF modules.

Applications

RF Power Amplifier Control AGC Loop Amplifier

Use Scenario: Regulating bias current of GaAs FET power amplifiers in GSM/CDMA handsets during transmit bursts.

IC Role / Device Role / Timing Role: Closed-loop error amplifier comparing sensed PA current against DAC-set reference; responds within 200 ns to maintain EVM under varying supply and temperature.

Use Value: 5 V/µs slew rate and 5 MHz GBW ensure loop stability and fast correction - preventing spectral regrowth during TDMA slot transitions.

Use Scenario: Amplifying RF envelope detector output to control variable-gain amplifier (VGA) in Bluetooth/WLAN receivers.

IC Role / Device Role / Timing Role: Low-noise (20 nV/√Hz), rail-to-rail buffer conditioning detector signal before ADC sampling; shutdown synchronizes with RX/TX state machine.

Use Value: 0.4 mV offset minimizes AGC null-point drift; shutdown reduces quiescent current by 99.9%, extending battery runtime in listen-before-talk modes.

Wireless LAN Temperature Compensation Bluetooth Transmitter Biasing

Use Scenario: Compensating PA gain drift over –40°C to +85°C in 2.4 GHz Wi-Fi front-ends using thermistor feedback network.

IC Role / Device Role / Timing Role: Precision difference amplifier rejecting common-mode thermal noise while amplifying small ΔV across thermistor divider.

Use Value: 75 dB CMRR and 4 pA input bias prevent thermistor self-heating errors; RRIO operation preserves full 0–3.3 V ADC range across temperature.

Use Scenario: Setting precise bias voltage for Class AB Bluetooth PA in portable headsets and audio accessories.

IC Role / Device Role / Timing Role: Low-quiescent-current (1.7 mA) buffer delivering stable 1.2 V bias from 3.3 V LDO, with shutdown disabling during sleep states.

Use Value: 0.2 µA shutdown current extends standby time to >100 hours; SC-70-6 footprint fits within 3×3 mm PCB area constraints of earbud PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar rail-to-rail, low-power operational amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
LMV721IDCKR Higher 10 MHz GBW, 8 V/µs slew rate, no shutdown pin - requires external enable circuitry. Better suited for wideband IF amplification but lacks integrated power gating for burst-mode systems. Select when bandwidth >5 MHz is required and shutdown timing is managed externally.
MCP6001UT-I/OT 1 kHz GBW, 0.6 V/µs slew rate, 100 nA input bias, no shutdown - lower performance, higher power efficiency at ultra-low frequencies. Appropriate for slow-settling sensor interfaces (e.g., battery voltage monitoring) where fast response is unnecessary. Choose for cost-sensitive, low-frequency (<100 kHz) applications where shutdown is not required.

Compared with LMV711IDCKR, LMV721IDCKR trades integrated shutdown for higher speed, while MCP6001UT-I/OT sacrifices bandwidth and precision for ultra-low quiescent current - making LMV711IDCKR the optimal balance of speed, power control, and accuracy for RF power management.

Availability

LMV711IDCKR is available at Aetrix Electronics and suitable for GSM/CDMA power amplifier control, AGC loops, wireless LAN temperature compensation, and Bluetooth transmitter biasing requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for LMV711IDCKR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in precision amplifiers, data converters, and power management ICs.

The LMV711IDCKR belongs to TI's LMV7xx low-power RRIO op-amp family, engineered specifically for battery-operated wireless infrastructure and handheld devices demanding high output drive, fast shutdown recovery, and rail-to-rail signal fidelity.

FAQ

What is the operating temperature range for LMV711IDCKR?

The LMV711IDCKR is characterized for operation from –40°C to +85°C ambient temperature. This industrial-grade range ensures reliable performance in mobile handset environments, automotive infotainment RF modules, and outdoor wireless access points where thermal cycling occurs. All key parameters-including input offset voltage, gain bandwidth, and shutdown current-are guaranteed across this full range per the SLOS463A datasheet.

Does LMV711IDCKR support true rail-to-rail input and output operation?

Yes, LMV711IDCKR supports rail-to-rail input common-mode range extending 200 mV beyond both supply rails (e.g., –0.2 V to 5.2 V at 5 V supply) and rail-to-rail output swing into 600 Ω loads. This is achieved via BiCMOS input stage and Class AB output stage, enabling direct interfacing with ground-referenced sensors and single-supply ADCs without level-shifting components-verified in Figures 3–6 of the LMV711IDCKR datasheet.

What is the typical shutdown current of LMV711IDCKR and how is it controlled?

The LMV711IDCKR draws 0.2 µA typical supply current in shutdown mode, activated by pulling the SHDN pin (pin 5) to logic-low (<0.8 V). This feature reduces total system standby power by >99.9% versus active mode (1.7 mA), making LMV711IDCKR ideal for TDMA/GSM burst-mode applications. Turn-on time from shutdown is <10 µs, allowing synchronization with RF transmit timing windows without latency penalties.

Can LMV711IDCKR drive a 600 Ω load while maintaining rail-to-rail output swing?

Yes, LMV711IDCKR guarantees rail-to-rail output swing into 600 Ω loads across its full operating temperature and supply range (2.7 V to 5 V). At 5 V supply, VOH reaches 4.8 V and VOL drops to 0.3 V into 600 Ω (per Electrical Characteristics Table, page 5), delivering ±25 mA sourcing/sinking capability-sufficient to directly drive RF detector diodes and low-impedance reference buffers without external buffering.

What package type and footprint does LMV711IDCKR use, and is it RoHS compliant?

LMV711IDCKR uses the SC-70-6 (DCK) package: 2.0 mm × 1.25 mm body size, 0.65 mm lead pitch, and 0.9 mm maximum height. It is RoHS-compliant and green (Pb-free, no Sb/Br), with CU NIPDAU lead finish and JEDEC MSL Level-1 rating (260°C peak reflow). This ultra-small footprint supports high-density RF front-end layouts in smartphones, wearables, and IoT edge nodes where board space is constrained.

LMV711IDCKR Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Amplifier Type:
General Purpose
Number of Circuits:
1
Output Type:
Rail-to-Rail
Slew Rate:
5V/µs
Gain Bandwidth Product:
5 MHz
-3db Bandwidth:
-
Current - Input Bias:
4 pA
Voltage - Input Offset:
400 µV
Current - Supply:
1.17mA
Current - Output / Channel:
40 mA
Voltage - Supply Span (Min):
2.7 V
Voltage - Supply Span (Max):
5.5 V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-6

LMV711IDCKR FAQ

1.How can I place an order for LMV711IDCKR through Aetrix?

Please submit a Request for Quotation (RFQ) for LMV711IDCKR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LMV711IDCKR reliable?

The price and inventory of LMV711IDCKR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LMV711IDCKR is usually 5 days.

3.What payment methods are accepted for LMV711IDCKR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LMV711IDCKR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LMV711IDCKR?

LMV711IDCKR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LMV711IDCKR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LMV711IDCKR?

For technical support, including LMV711IDCKR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LMV711IDCKR requirements.

6.How does Aetrix verify that LMV711IDCKR is sourced from the original manufacturer or authorized distributors?

All LMV711IDCKR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LMV711IDCKR meets industry standards.

7.What is the process for return or replacement of LMV711IDCKR?

All LMV711IDCKR units undergo pre-shipment inspection (PSI). If there is an issue with LMV711IDCKR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LMV711IDCKR part is unused and in its original packaging.

Return procedure for LMV711IDCKR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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