Texas Instruments LMV831MGE/NOPB

Overview

LMV831MGE/NOPB from Texas Instruments is a single-channel, rail-to-rail output, CMOS-input operational amplifier optimized for EMI-hardened precision signal conditioning in low-power, high-noise environments. It delivers 3.3-MHz gain-bandwidth, 240-µA supply current per channel, 1-mV max input offset voltage, 12 nV/√Hz input voltage noise at 1 kHz, and 120-dB EMI rejection ratio at 1.8 GHz - enabling robust photodiode preamplification and piezoelectric sensor interfacing in portable medical and industrial instrumentation.

For engineers reviewing the LMV831MGE/NOPB datasheet, LMV831MGE/NOPB pinout, LMV831MGE/NOPB application, or LMV831MGE/NOPB equivalent, this page provides verified circuit role (precision low-noise op-amp), package mapping (5-pin SC70), thermal metrics (RθJA = 267.7°C/W), EMI performance data (120 dB @ 1.8 GHz), and validated alternatives for battery-powered sensor front-ends requiring −40°C to 125°C operation.

Technical Context

The LMV831MGE/NOPB employs a CMOS input stage with 0.1-pA typical input bias current and rail-to-rail output swing, supporting ground-sensing applications across its 2.7-V to 5.5-V supply range. Its unity-gain-stable architecture maintains phase margin ≥65° with capacitive loads up to 200 pF, and achieves 91-dB CMRR and 93-dB PSRR at 25°C.

EMI hardening is implemented via on-chip RF filtering and differential input rejection, delivering 120-dB EMIRR at 1.8 GHz - measured as 20·log(V_{RF_PEAK}/ΔV_OS) - making it suitable for proximity to cellular, Wi-Fi, and Bluetooth transceivers without external shielding.

Key Specifications

Pinout & Package

The LMV831MGE/NOPB is housed in a 5-pin SC70 package (1.25 mm × 2.00 mm body size), optimized for space-constrained PCB layouts in portable equipment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar operational amplifier applications.

Compared with TLV9001IDBVR and OPA333AIDBVR, the LMV831MGE/NOPB uniquely balances 3.3-MHz bandwidth, 120-dB EMI rejection, and −40°C to 125°C operation - making it the only option among the three qualified for RF-immune, wide-temperature, battery-operated sensor signal chains.

Availability

LMV831MGE/NOPB is available at Aetrix Electronics and suitable for photodiode preamplifiers, piezoelectric sensor interfaces, and portable gas monitors requiring stable component supply across automotive, industrial, and medical OEM programs.

Supply support for LMV831MGE/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with over 90 years of innovation in precision amplifiers and signal chain solutions.

The LMV83x product line was engineered specifically for EMI-hardened, low-power operational amplifier applications in portable and wireless-adjacent systems - prioritizing RF immunity without sacrificing bandwidth or precision.

FAQ

What is the maximum capacitive load the LMV831MGE/NOPB can drive while maintaining stability?

The LMV831MGE/NOPB maintains ≥65° phase margin and unity-gain stability with capacitive loads up to 200 pF, as confirmed in TI's SNOSAZ6C datasheet Figure 25. This allows direct connection to ADC input capacitors, long PCB traces, or unbuffered filter stages without external isolation resistors - critical for maintaining signal fidelity in compact sensor modules where board space limits discrete compensation components.

Does the LMV831MGE/NOPB support true rail-to-rail input common-mode range?

No, the LMV831MGE/NOPB features rail-to-rail *output* swing but not rail-to-rail *input*. Its input common-mode voltage range extends from −0.1 V to 2.1 V at 3.3-V supply (or −0.1 V to 3.8 V at 5-V supply), as specified in Section 6.5 of the datasheet. The input stage includes ground-sensing capability (CMVR includes 0 V), but does not accept signals at the positive rail - requiring design attention when buffering high-side bridge sensors.

How is EMI rejection quantified for the LMV831MGE/NOPB, and what test conditions apply?

EMI rejection is quantified as EMI Rejection Ratio (EMIRR), defined by TI as EMIRR = 20·log(V_{RF_PEAK}/ΔV_OS). For the LMV831MGE/NOPB, this is measured at 1.8 GHz with 100-mV_PEAK (−20 dBV_P) RF injection on both IN+ and IN−, yielding 120 dB. This metric reflects worst-case induced offset shift under real-world cellular band interference, validated per JEDEC JESD85 methodology.

What thermal performance can be expected from the LMV831MGE/NOPB in a standard 2-layer PCB layout?

In a standard 2-layer PCB with JEDEC-standard copper pour (1-inch² 2-oz copper on top/bottom layers), the LMV831MGE/NOPB exhibits R_θJA = 267.7°C/W (Section 6.4). At 240 µA supply current and 3.3-V supply, power dissipation is ~0.8 mW - resulting in <0.2°C junction-to-ambient rise. This confirms suitability for thermally constrained spaces like hearing aids and wearable biosensors without heatsinking.

Is the LMV831MGE/NOPB pin-compatible with other members of the LMV83x family?

No - the LMV831MGE/NOPB (5-pin SC70) is not pin-compatible with the LMV832 (8-pin VSSOP) or LMV834 (14-pin TSSOP). Each variant has distinct pin counts, functions, and footprints. The LMV831MGE/NOPB's 5-pin configuration integrates only one amplifier channel with dedicated IN+, IN−, OUTPUT, V+, and V− pins - requiring unique PCB layout and cannot be substituted without redesign.