Texas Instruments LMV831MG/NOPB

Overview

LMV831MG/NOPB from Texas Instruments is a single-channel, rail-to-rail output, CMOS-input operational amplifier optimized for EMI-hardened signal conditioning in precision sensor interfaces and low-power portable systems. It operates from 2.7 V to 5.5 V, draws only 240 µA per channel, delivers 3.3-MHz gain-bandwidth, 2 V/µs slew rate, and achieves 120 dB EMI rejection at 2.4 GHz - enabling stable operation near RF sources like cellular transceivers and Wi-Fi modules.

For engineers reviewing the LMV831MG/NOPB datasheet, LMV831MG/NOPB pinout, LMV831MG/NOPB application, or LMV831MG/NOPB equivalent, this page provides verified specifications, SC70-5 package layout, real-world use cases in piezoelectric sensing and photodiode preamplification, and validated alternative options for EMI-sensitive analog front-ends.

Technical Context

The LMV831MG/NOPB employs a CMOS input stage with 0.1 pA typical input bias current and rail-to-rail output swing, supporting ground-sensing inputs across its full common-mode range (−0.1 V to V+ − 1.2 V at 3.3 V). Its unity-gain-stable architecture maintains phase margin ≥65° with capacitive loads up to 200 pF, eliminating need for external compensation in buffer or filter configurations.

EMI hardening is implemented at the transistor level, not via external filtering: the device rejects RF interference through internal differential input rejection and on-die filtering, achieving 120 dB EMIRR at 2.4 GHz - a design feature confirmed for the LMV831 variant specifically, not extrapolated from family-level claims.

Key Specifications

Pinout & Package

The LMV831MG/NOPB is housed in a 5-pin SC70 package (1.25 mm × 2.00 mm), optimized for space-constrained PCB layouts in wearables and IoT edge nodes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar operational amplifier applications.

Compared with TLV9001IDBVR and OPA333AIDBVR, the LMV831MG/NOPB uniquely balances EMI resilience (120 dB), bandwidth (3.3 MHz), and low power (240 µA) - making it the only option among the three qualified for RF-noisy portable medical and industrial sensor nodes requiring both precision and robustness.

Availability

LMV831MG/NOPB is available at Aetrix Electronics and suitable for piezoelectric sensing, photodiode pre-amplification, and portable medical instrumentation requiring stable component supply across extended product lifecycles.

Supply support for LMV831MG/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with over 50 years of innovation in precision amplifiers and signal chain solutions.

The LMV83x series was designed specifically for EMI-hardened analog front-ends in consumer, medical, and industrial equipment exposed to cellular, Wi-Fi, and Bluetooth RF fields - addressing a documented gap in legacy op-amp immunity.

FAQ

What is the maximum capacitive load the LMV831MG/NOPB can drive while maintaining stability?

The LMV831MG/NOPB is unity-gain stable and maintains ≥65° phase margin with capacitive loads up to 200 pF, as verified in TI's SNOSAZ6C datasheet Figure 25. This allows direct driving of ADC input capacitance or long PCB traces without external isolation resistors - a key advantage over non-EMI-hardened op-amps that require compensation networks for loads >50 pF.

Does the LMV831MG/NOPB support true single-supply operation with input signals extending below ground?

Yes. The LMV831MG/NOPB features an input common-mode voltage range that includes ground (−0.1 V minimum at 3.3 V supply), enabling direct interface with sensors whose outputs swing slightly negative - such as piezoelectric elements or AC-coupled transducers - without level-shifting circuitry. This capability is explicitly specified in Section 6.5 of the LMV831MG/NOPB datasheet.

How does the EMI hardening in LMV831MG/NOPB differ from standard op-amps with external RF filtering?

The LMV831MG/NOPB implements EMI rejection at the silicon level using proprietary input-stage topology and on-die filtering, achieving 120 dB rejection at 2.4 GHz without external components. Standard op-amps rely on external RC networks or ferrite beads, which add cost, board area, and parasitic effects - whereas LMV831MG/NOPB's integrated solution eliminates those trade-offs while guaranteeing performance across temperature and process variation.

What is the output voltage swing specification for LMV831MG/NOPB at 3.3-V supply and 10-kΩ load?

At V+ = 3.3 V and RL = 10 kΩ to V+/2, the LMV831MG/NOPB delivers rail-to-rail output swing: within 6 mV of V+ (high) and 5 mV of V− (low) at TA = 25°C, per Table 6.5 in the SNOSAZ6C datasheet. This ensures >99% of the 3.3-V supply range is usable for ADC interfacing, maximizing dynamic range without external level translation.

Is LMV831MG/NOPB pin-compatible with other members of the LMV83x family?

No. The LMV831MG/NOPB uses a 5-pin SC70 package, while LMV832 (dual) uses 8-pin VSSOP and LMV834 (quad) uses 14-pin TSSOP. Pin functions are not shared across packages - for example, the LMV831MG/NOPB has dedicated IN+, IN−, OUTPUT, V+, and V− pins, whereas multi-channel variants assign separate pins per channel. Board redesign is required when scaling channel count.