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Texas Instruments LMV851MGE/NOPB

Part No.:
LMV851MGE/NOPB
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
5-TSSOP, SC-70-5, SOT-353
Datasheet:
AetrixLMV851MGE/NOPB.pdf
Description:
IC OPAMP GP 1 CIRCUIT SC70-5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:338

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Product details

Overview

LMV851MGE/NOPB from Texas Instruments is a single-channel, rail-to-rail output, CMOS-input operational amplifier optimized for EMI-hardened signal conditioning in precision low-power systems. It delivers 8 MHz gain-bandwidth, 4.5 V/µs slew rate, 1 mV max input offset voltage, 0.1 pA input bias current, and 87 dB EMI rejection ratio at 1.8 GHz - enabling stable sensor amplification near RF sources such as cellular transceivers or Wi-Fi modules.

For engineers reviewing the LMV851MGE/NOPB datasheet, LMV851MGE/NOPB pinout, LMV851MGE/NOPB application, or LMV851MGE/NOPB equivalent, key selection criteria include its SC70-5 package footprint, −40°C to +125°C operating range, 2.7–5.5 V supply compatibility, rail-to-rail output swing, and verified immunity to 1.8 GHz RF interference in photodiode preamp and piezoelectric sensor front-ends.

Technical Context

The LMV851MGE/NOPB employs a unity-gain-stable CMOS input stage with input common-mode voltage range extending to ground and up to 2.1 V below V+ at 3.3 V supply. Its internal compensation ensures stability with capacitive loads up to 200 pF without external isolation.

EMI hardening is implemented via on-die filtering and layout techniques that suppress RF rectification at IN+ and IN−, quantified by EMIRR of 87 dB at 1.8 GHz - a design-critical specification for medical diagnostics equipment and portable instrumentation exposed to ambient RF fields.

Key Specifications

ParameterValue and Actual Design Meaning
Supply Voltage2.7 V to 5.5 V - supports single-cell Li-ion (3.0–3.7 V) and 3.3 V/5 V system rails without level shifting.
GBW8 MHz - enables stable closed-loop gain ≥10 at 800 kHz or ≥2 at 4 MHz for anti-aliasing filter buffering.
Slew Rate4.5 V/µs - supports 1 VPP signals up to ~700 kHz without distortion in unity-gain configurations.
Input Offset Voltage±1 mV max - ensures ≤10 mV error in 10× gain sensor interfaces with 10 mV full-scale input.
EMIRR @ 1.8 GHz87 dB - limits RF-induced offset shift to <1 µV under 100 mVP RF interference, critical for pressure sensor ADC front-ends.
Output SwingRail-to-rail - delivers >3.2 VPP into 10 kΩ load at 3.3 V supply, maximizing dynamic range for low-voltage ADCs.
Supply Current0.52 mA typ at 3.3 V - enables >10-year battery life in always-on wearable medical sensors.

Pinout & Package

The LMV851MGE/NOPB is housed in a 5-pin SC70 package (TI package code DCK), measuring 2.0 mm × 1.25 mm × 0.95 mm, with 0.65 mm lead pitch and moisture sensitivity level 1 (MSL-1).

Pin/TerminalCircuit RoleDesign Meaning
1 (IN−)Inverting InputHigh-impedance CMOS node; accepts common-mode voltages from −0.2 V to 2.1 V at 3.3 V supply.
2 (IN+)Non-inverting InputMatches IN− in bias current (0.1 pA) and EMI rejection; used for differential or single-ended sensing.
3 (V−)Negative SupplyGround-referenced terminal; supports true single-supply operation down to 0 V.
4 (OUT)Amplifier OutputRail-to-rail CMOS output capable of sourcing/sinking 30 mA; drives 10 kΩ load within 10 mV of rails.
5 (V+)Positive SupplyAccepts 2.7–5.5 V; PSRR of 93 dB minimizes supply noise coupling into signal path.

Key Features

FeatureDesign Value
EMI Hardening87 dB rejection at 1.8 GHz prevents RF-induced offset drift in proximity to cellular/Wi-Fi antennas.
Rail-to-Rail OutputSwings within 7 mV of V+ and V− at 3.3 V/10 kΩ, preserving full ADC input range in low-voltage systems.
Ultra-Low Input Bias Current0.1 pA typical enables high-Z sensor interfacing (e.g., piezoelectric elements) without signal attenuation.
Wide Temperature RangeSpecified from −40°C to +125°C for under-hood automotive pressure sensing and industrial motor control.
Capacitive Load DriveStable with up to 200 pF direct load - eliminates need for isolation resistors in compact PCB layouts.

Applications

Photodiode PreampPiezoelectric Sensors

Use Scenario: Amplifying weak current from medical pulse oximetry photodiodes in handheld devices near Bluetooth radios.

IC Role / Device Role / Timing Role: Transimpedance amplifier with 1 MΩ feedback resistor, converting photocurrent to voltage while rejecting 2.4 GHz RF noise.

Use Value: 87 dB EMIRR ensures <1 µV RF-induced offset shift, preventing false SpO₂ readings during concurrent wireless transmission.

Use Scenario: Conditioning high-impedance charge output from vibration sensors in predictive maintenance edge nodes.

IC Role / Device Role / Timing Role: Charge amplifier with ultra-low IB (0.1 pA) preserving signal integrity from piezoelectric elements.

Use Value: Input bias current <0.5 pA avoids >10 mV error in 20 pC/pSi charge sensitivity applications over temperature.

Portable Medical DiagnosticsBattery-Powered Environmental Monitoring

Use Scenario: Front-end amplification for blood pressure cuff transducers in field-deployable sphygmomanometers.

IC Role / Device Role / Timing Role: Precision DC-coupled buffer with 1 mV max VOS, driving 12-bit SAR ADC inputs.

Use Value: 0.4 mA supply current extends 2xAA alkaline battery life beyond 2 years in intermittent-use diagnostic mode.

Use Scenario: Signal conditioning for MEMS pressure sensors in IoT weather stations powered by coin-cell batteries.

IC Role / Device Role / Timing Role: Low-noise (11 nV/√Hz), rail-to-rail output amplifier interfacing to ultra-low-power microcontroller ADC.

Use Value: 3.3 V operation with rail-to-rail swing maximizes SNR when paired with 3.0 V reference ADCs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar operational amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TLV9001IDBVRLower GBW (1 MHz), higher supply current (60 µA), same SC70-5 package and rail-to-rail output.Not suitable for >100 kHz sensor bandwidths; better for ultra-low-power (<10 µA) sleep-mode wake-up amplifiers.Select TLV9001IDBVR only when bandwidth demand is <200 kHz and supply current must be <0.1 mA.
OPA316IDBVRHigher precision (50 µV VOS), lower noise (11 nV/√Hz), but no published EMIRR spec and 10× higher cost.Lacks documented EMI hardening - requires external RF filtering in noisy environments like industrial gateways.Choose OPA316IDBVR only for lab-grade instrumentation where EMI is controlled and offset accuracy dominates.

Compared with TLV9001IDBVR and OPA316IDBVR, the LMV851MGE/NOPB uniquely balances 8 MHz bandwidth, 0.4 mA quiescent current, and industry-leading 87 dB EMIRR - making it the only SC70 op amp qualified for unshielded pressure sensor front-ends in consumer-grade wireless medical devices.

Availability

LMV851MGE/NOPB is available at Aetrix Electronics and suitable for photodiode preamplification, piezoelectric sensor conditioning, and portable medical diagnostics requiring stable component supply across extended temperature ranges and EMI-prone environments.

Supply support for LMV851MGE/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets.

The LMV851MGE/NOPB belongs to TI's EMI-hardened precision op amp product line, engineered specifically for reliable signal acquisition in RF-dense environments such as wireless health monitors and smart industrial sensors.

FAQ

What is the maximum capacitive load the LMV851MGE/NOPB can drive without instability?

The LMV851MGE/NOPB is specified to remain unity-gain stable with capacitive loads up to 200 pF directly at the output. This eliminates the need for series isolation resistors in most PCB layouts, reducing component count and board area. For loads exceeding 200 pF, an isolation resistor (RISO) between the output and CL is required to maintain phase margin above 60°, as confirmed in Figure 28 of the SNOSAW1A datasheet. The LMV851MGE/NOPB's internal compensation is optimized for this exact drive capability.

Does the LMV851MGE/NOPB support true single-supply operation with input signals at ground potential?

Yes, the LMV851MGE/NOPB features an input common-mode voltage range that includes ground (−0.2 V minimum at 3.3 V supply) and extends up to 2.1 V, enabling direct interface with ground-referenced sensors like resistive bridges or thermistors. Its CMRR remains ≥76 dB across this range, and the rail-to-rail output ensures full dynamic range utilization even with 0 V to V+ input signals. This is explicitly validated in the CMVR specification and Figure 5 of the LMV851MGE/NOPB datasheet.

What does the 87 dB EMIRR value at 1.8 GHz mean for real-world circuit design?

An EMIRR of 87 dB at 1.8 GHz means that a 100 mVP RF signal at that frequency induces less than 1 µV of additional input offset voltage in the LMV851MGE/NOPB - a level negligible in 12-bit+ sensor interfaces. This allows placement of the LMV851MGE/NOPB within 10 mm of GSM/UMTS antenna traces without shielding or ferrite beads, simplifying mechanical integration in space-constrained wearables. The value is measured per JEDEC JESD85 methodology and applies to both IN+ and IN− pins.

Is the LMV851MGE/NOPB pin-compatible with other members of the LMV85x family?

No, the LMV851MGE/NOPB (SC70-5) is not pin-compatible with the LMV852 (VSSOP-8, dual) or LMV854 (TSSOP-14, quad). Each variant uses a distinct package and pinout optimized for channel count and thermal performance. The LMV851MGE/NOPB's 5-pin SC70 layout places V+, V−, IN+, IN−, and OUT on sequential leads - a configuration unique to the single-channel variant and incompatible with dual or quad footprints.

What is the guaranteed input offset voltage specification over temperature for the LMV851MGE/NOPB?

The LMV851MGE/NOPB has a maximum input offset voltage of ±1 mV over the full operating temperature range of −40°C to +125°C, as specified in the Electrical Characteristics table (page 2 of SNOSAW1A). This limit includes both initial offset and drift contribution, with TCVOS specified at ±2 µV/°C max. At 125°C, the worst-case accumulated offset remains within ±1.2 mV, ensuring predictable performance in under-hood automotive or industrial control applications.

LMV851MGE/NOPB Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
5-TSSOP, SC-70-5, SOT-353
Packaging:
Tape & Reel (TR)
Product Status:
Active
Amplifier Type:
General Purpose
Number of Circuits:
1
Output Type:
Rail-to-Rail
Slew Rate:
4.5V/µs
Gain Bandwidth Product:
8 MHz
-3db Bandwidth:
-
Current - Input Bias:
0.1 pA
Voltage - Input Offset:
260 µV
Current - Supply:
430µA
Current - Output / Channel:
65 mA
Voltage - Supply Span (Min):
2.7 V
Voltage - Supply Span (Max):
5.5 V
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-5

LMV851MGE/NOPB FAQ

1.How can I place an order for LMV851MGE/NOPB through Aetrix?

Please submit a Request for Quotation (RFQ) for LMV851MGE/NOPB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LMV851MGE/NOPB reliable?

The price and inventory of LMV851MGE/NOPB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LMV851MGE/NOPB is usually 5 days.

3.What payment methods are accepted for LMV851MGE/NOPB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LMV851MGE/NOPB transactions.

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4.How is shipping managed for LMV851MGE/NOPB?

LMV851MGE/NOPB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LMV851MGE/NOPB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LMV851MGE/NOPB?

For technical support, including LMV851MGE/NOPB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LMV851MGE/NOPB requirements.

6.How does Aetrix verify that LMV851MGE/NOPB is sourced from the original manufacturer or authorized distributors?

All LMV851MGE/NOPB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LMV851MGE/NOPB meets industry standards.

7.What is the process for return or replacement of LMV851MGE/NOPB?

All LMV851MGE/NOPB units undergo pre-shipment inspection (PSI). If there is an issue with LMV851MGE/NOPB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LMV851MGE/NOPB part is unused and in its original packaging.

Return procedure for LMV851MGE/NOPB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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