Texas Instruments LMV861MGE/NOPB

Overview

LMV861MGE/NOPB from Texas Instruments is a single-channel, CMOS-input, rail-to-rail output operational amplifier optimized for EMI-sensitive signal conditioning in precision sensor interfaces. It delivers 30 MHz gain-bandwidth, 18 V/µs slew rate, 1 mV max input offset voltage, and 105 dB EMI rejection ratio at 1.8 GHz - enabling robust photodiode preamplification and medical diagnosis equipment operation in noisy RF environments.

For engineers reviewing the LMV861MGE/NOPB datasheet, LMV861MGE/NOPB pinout, LMV861MGE/NOPB application, or LMV861MGE/NOPB equivalent, key selection criteria include its 2.25 mA supply current at 3.3 V, −40°C to +125°C operating range, SC70-5 package footprint, and verified EMI hardening performance across 400–2400 MHz bands without external filtering.

Technical Context

The LMV861MGE/NOPB employs a unity-gain-stable CMOS input stage with input common-mode voltage range extending to ground (−0.1 V min) and rail-to-rail output swing within 3–5 mV of supply rails under 10 kΩ load. Its 30 MHz GBW and 70° phase margin support stable operation with capacitive loads up to 200 pF.

EMI hardening is implemented via on-die filtering and layout techniques that suppress RF-induced offset voltage shifts, quantified by EMIRR values of 105 dB at 1.8 GHz and 110 dB at 2.4 GHz - directly addressing interference from mobile communications and wireless peripherals in compact PCB layouts.

Key Specifications

Pinout & Package

The LMV861MGE/NOPB is housed in a 5-pin SC70 package (2.0 mm × 1.25 mm, 0.65 mm pitch), optimized for space-constrained sensor front-ends. Thermal resistance θ_JA is 302°C/W on standard 2-layer PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar operational amplifier applications.

Compared with LMV821IDBVR and OPA333AIDBVR, the LMV861MGE/NOPB uniquely balances 30 MHz bandwidth, 105 dB EMI rejection, and 2.25 mA power consumption in a 5-pin SC70 - making it the only option among the three qualified for high-speed, RF-immune sensor buffering in compact portable medical devices.

Availability

LMV861MGE/NOPB is available at Aetrix Electronics and suitable for photodiode preamplification, weight scale signal conditioning, and medical diagnosis equipment requiring stable component supply across extended temperature ranges and EMI-prone environments.

Supply support for LMV861MGE/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with deep expertise in precision amplifiers and signal chain design.

The LMV861MGE/NOPB belongs to TI's EMI-hardened op amp product line, engineered specifically for reliable sensor signal conditioning in RF-dense environments such as portable medical devices, industrial IoT nodes, and automotive cabin electronics.

FAQ

What is the maximum capacitive load the LMV861MGE/NOPB can drive without instability?

The LMV861MGE/NOPB is unity-gain stable and maintains phase margin ≥70° with capacitive loads up to 200 pF. This allows direct connection to ADC input capacitance or long PCB traces without isolation resistors. For loads exceeding 200 pF, a series isolation resistor (e.g., 50 Ω) between the LMV861MGE/NOPB output and the load restores stability while preserving signal integrity in most sensor interface designs.

Does the LMV861MGE/NOPB support true single-supply operation with input signals at ground?

Yes. The LMV861MGE/NOPB features an input common-mode voltage range that includes ground (−0.1 V minimum) and extends to V+ − 1.2 V. Its CMRR remains ≥65 dB across this range, enabling accurate amplification of 0 V-referenced sensor outputs (e.g., bridge circuits, thermistors) without level-shifting circuitry - a critical capability confirmed in TI's SNOSAZ5C datasheet Section 7.3.

How does the EMI rejection ratio (EMIRR) of the LMV861MGE/NOPB compare at different RF frequencies?

The LMV861MGE/NOPB achieves 105 dB EMIRR at 1.8 GHz and 110 dB at 2.4 GHz, per TI's SNOSAZ5C datasheet Table 1. At lower frequencies, EMIRR is 80 dB at 900 MHz and 70 dB at 400 MHz. This frequency-dependent performance reflects its targeted hardening against modern wireless standards (LTE Band 3/7/38, Wi-Fi 2.4 GHz), making the LMV861MGE/NOPB especially effective in consumer and medical devices co-located with cellular/Wi-Fi radios.

What is the typical supply current of the LMV861MGE/NOPB at 5 V operation?

At V+ = 5 V and T_A = 25°C, the LMV861MGE/NOPB draws 2.47 mA (typical), 2.84 mA (max), and 3.27 mA (max over temperature), as specified in the 5V Electrical Characteristics table of SNOSAZ5C. This represents a <10% increase over its 3.3 V supply current (2.25 mA typ), confirming efficient operation across its full 2.7–5.5 V range - essential for mixed-voltage system designs.

Is the LMV861MGE/NOPB pin-compatible with other SC70-5 op amps like the TLV2461 or OPA348?

No. While the LMV861MGE/NOPB uses the standard SC70-5 pinout (V+, −IN, V−, +IN, OUT), functional compatibility is not guaranteed. The TLV2461 has different input stage topology (rail-to-rail input), and the OPA348 lacks EMI hardening and specifies only 1 MHz GBW. Substitution requires verification of offset, noise, stability, and EMI performance - the LMV861MGE/NOPB's unique value lies in its validated 30 MHz/105 dB combination, not mechanical interchangeability.