Texas Instruments LMV881LEE/NOPB

Overview

LMV881LEE/NOPB from Texas Instruments is a 23 MHz, rail-to-rail output, low-power CMOS operational amplifier with EMI hardening, 1.8V logic-compatible shutdown, 1.65 mA supply current, and 1 mV max input offset voltage. It operates from 2.7V to 5.5V and delivers 70 mA output drive at 3.3V, serving as a precision signal conditioner in EMI-sensitive sensor front-ends such as pressure transducer interfaces.

For engineers reviewing the LMV881LEE/NOPB datasheet, LMV881LEE/NOPB pinout, LMV881LEE/NOPB application, or LMV881LEE/NOPB equivalent, key selection criteria include its 105 dB EMIRR at 1.8 GHz, sub-nanoamp shutdown current (200 pA), 9 nV/√Hz input voltage noise at 1 kHz, and validated stability with 200 pF capacitive loads - all critical for medical diagnostics and portable instrumentation design.

Technical Context

The LMV881LEE/NOPB implements a CMOS input stage with 0.1 pA typical input bias current and rail-to-rail output stage capable of sourcing/sinking up to 70 mA at 3.3V. Its internal EMI hardening circuitry yields 105 dB EMIRR at 1.8 GHz and maintains stable unity-gain operation across −40°C to +125°C ambient temperatures.

Shutdown control uses fixed 1.8V logic thresholds referenced to V−, enabling direct interface with low-voltage microcontrollers without level shifting. During shutdown, the output is hard-clamped to V− via a ~8.5 Ω internal MOSFET, ensuring a defined state while drawing only 200 pA supply current.

Key Specifications

Pinout & Package

LMV881LEE/NOPB is housed in a 6-pin µUQFN package (1.5 mm × 1.0 mm × 0.5 mm, package code NKK0006A) with wettable flanks for automated optical inspection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar operational amplifier applications.

Compared with LMV881IDBVR, LMV881LEE/NOPB saves >60% board area and improves thermal performance in compact layouts; versus OPA333AIDBVR, it trades ultra-low drift for 23 MHz bandwidth, 105 dB EMIRR, and integrated shutdown - making it optimal for battery-powered, RF-exposed sensor signal chains.

Availability

LMV881LEE/NOPB is available at Aetrix Electronics and suitable for pressure sensing, portable medical instrumentation, and industrial current loop interfaces requiring stable component supply across extended temperature ranges and EMI-prone environments.

Supply support for LMV881LEE/NOPB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets.

The LMV881LEE/NOPB belongs to TI's precision EMI-hardened op amp product line, engineered specifically for robust signal conditioning in RF-dense environments like wireless medical devices and smart industrial sensors.

FAQ

What is the maximum capacitive load the LMV881LEE/NOPB can drive without external compensation?

The LMV881LEE/NOPB is specified to remain stable with capacitive loads up to 200 pF directly connected to its output under unity-gain conditions. This eliminates the need for isolation resistors in many ADC driver and filter applications. Stability is verified across the full −40°C to +125°C temperature range and 2.7V–5.5V supply range, per Figure 12 and Figure 13 of the SNOSC62B datasheet.

Does the LMV881LEE/NOPB require external level-shifting circuitry to interface with 1.8V microcontroller GPIOs?

No, the LMV881LEE/NOPB does not require external level-shifting circuitry. Its shutdown pin (SD) has fixed 1.8V logic thresholds referenced to V−, meaning it reliably interprets 0.3–0.7 V as logic low and ≥1 V as logic high regardless of whether V+ is 3.3V or 5V. This allows direct connection to 1.8V MCU GPIOs without translators, as confirmed in Section 8.3.3 of the LMV881 datasheet.

How does the EMI hardening of the LMV881LEE/NOPB improve system-level robustness in wireless environments?

The LMV881LEE/NOPB achieves 105 dB EMI Rejection Ratio (EMIRR) at 1.8 GHz by integrating on-die RF rejection circuitry that minimizes input-referred offset voltage shift (ΔV_OS) caused by RF interference. In practice, this prevents visible baseline wander or false triggers in pressure sensor outputs near Bluetooth or Wi-Fi transceivers - reducing or eliminating the need for ferrite beads, shielded cables, or layout-level RF mitigation techniques.

What is the output behavior of the LMV881LEE/NOPB during shutdown mode?

During shutdown mode (SD pin < 0.676 V), the LMV881LEE/NOPB disables its amplifier core and hard-clamps the output (OUT) to V− via an internal MOSFET with ~8.5 Ω on-resistance. This provides a known, low-impedance state - unlike high-Z tri-state outputs - preventing floating nodes in downstream circuits. The clamped output remains stable even with 200 Ω pull-up to V+, producing ≤260 mV at V−, as specified in the 5V Electrical Characteristics table.

Can the LMV881LEE/NOPB operate from a single 2.7V supply while maintaining rail-to-rail output swing?

Yes, the LMV881LEE/NOPB is fully specified for 2.7V operation and delivers rail-to-rail output swing across its entire supply range. At 2.7V and 10 kΩ load, the output swings within 5 mV of both rails (per Figure 6 and Figure 7), supporting full-scale utilization of low-voltage ADCs. Input common-mode range extends to −0.2 V (below ground), enabling true single-supply operation with grounded sensor references.