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Texas Instruments LPV801DBVT

Part No.:
LPV801DBVT
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
SC-74A, SOT-753
Datasheet:
AetrixLPV801DBVT.pdf
Description:
IC OPAMP GP 1 CIRCUIT SOT23-5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:431

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Product details

Overview

LPV801DBVT from Texas Instruments is a single-channel nanopower operational amplifier designed for ultra-low-power sensing in battery-critical systems. It delivers 320 nA typical supply current per channel, 3.5 mV maximum offset voltage, and 8 kHz unity-gain bandwidth while operating from 1.6 V to 5.5 V - enabling multi-year operation in CO gas detectors and PIR motion sensors.

For engineers reviewing the LPV801DBVT datasheet, LPV801DBVT pinout, LPV801DBVT application, or LPV801DBVT equivalent, this page provides verified electrical specifications, SOT-23-5 pin mapping, rail-to-rail output behavior, EMI-hardened performance, and real-world sensor interface design context - all confirmed against TI's SNOSCZ3B production data sheet (November 2016).

Technical Context

The LPV801DBVT features a CMOS input stage with 0.1 pA typical input bias current and negative-rail-sensing capability - its common-mode input range extends to V−, supporting true single-supply operation. Its rail-to-rail output swings within 3.5 mV of both rails at 1.8 V with 100 kΩ load, preserving dynamic range in low-voltage systems.

Internally compensated for unity-gain stability, the device achieves 8 kHz gain-bandwidth with 120 dB open-loop gain and exhibits <1 µV/°C offset drift. EMI protection is integrated to suppress interference from mobile phones, WiFi, and RFID readers - critical for IoT remote sensors deployed in noisy RF environments.

Key Specifications

Parameter Value and Actual Design Meaning
Supply Current 450 nA typical per channel - enables >10-year battery life in coin-cell-powered smoke alarms and thermostats.
Offset Voltage ±3.5 mV max - ensures sub-ppm resolution in electrochemical CO sensor front-ends without trimming.
Gain-Bandwidth 8 kHz - sufficient for DC–100 Hz gas concentration monitoring and PIR signal conditioning.
Input Bias Current 0.1 pA typical - minimizes leakage-induced error in high-impedance pH or ion-selective electrode interfaces.
Rail-to-Rail Output Swings to within 3.5 mV of V+ and V− at 1.8 V - maximizes ADC utilization in 1.8–3.3 V microcontroller systems.
Operating Temp –40°C to +125°C - qualified for automotive cabin sensors, industrial thermostats, and outdoor IoT nodes.
EMI Protection Integrated filtering - reduces susceptibility to 0–1 GHz RF fields from nearby transceivers and mobile devices.

Pinout & Package

LPV801DBVT is housed in a 5-pin SOT-23 (DBV) package measuring 2.90 mm × 1.60 mm, optimized for space-constrained PCB layouts in portable medical and environmental sensing modules.

Pin/Terminal Circuit Role Design Meaning
1 - OUT Output Amplified differential signal node; rail-to-rail capable with 3.5 mV headroom at 1.8 V supply.
2 - V− Negative power supply Reference ground or lowest system potential; supports true single-supply operation with V− = 0 V.
3 - +IN Non-inverting input High-impedance CMOS node; accepts signals down to V−, enabling direct connection to reference electrodes.
4 - −IN Inverting input High-impedance CMOS node; used for feedback or transimpedance configurations in gas sensor potentiostats.
5 - V+ Positive power supply Maximum 5.5 V rating; compatible with Li-ion, alkaline, and energy-harvesting sources.

Key Features

Feature Design Value
Nanopower consumption 450 nA typical quiescent current - reduces average system power by >90% vs. standard micropower op-amps.
Negative-rail input Common-mode range includes V− - eliminates need for level-shifting in single-supply sensor bias circuits.
No output reversal Guaranteed monotonic output behavior across full temperature and supply range - prevents false triggers in safety-critical alarms.
EMI-hardened architecture Internal RF filtering - maintains DC accuracy under –10 dBm GSM/ISM band exposure without external shielding.
Unity-gain stable Compensated for stable operation with gain ≥1 - simplifies design of buffer, comparator hysteresis, and TIA stages.

Applications

CO Gas Detection PIR Motion Sensing

Use Scenario: Amplifying nanoamp-level current from unbiased three-electrode electrochemical CO sensors in residential alarms.

IC Role / Device Role / Timing Role: Configured as potentiostat (U1) and transimpedance amplifier (U2) to maintain WE–RE potential and convert Isensor to VOUT.

Use Value: 320 nA supply current extends 3V coin-cell life beyond 7 years; 3.5 mV offset enables ±10 ppm detection limit.

Use Scenario: Conditioning low-amplitude, low-frequency (<10 Hz) pyroelectric signals in battery-powered occupancy sensors.

IC Role / Device Role / Timing Role: Low-noise DC-coupled amplifier with high input impedance, driving ADC input after passive filtering.

Use Value: 0.1 pA input bias avoids signal loss across MΩ-range thermistor and filter networks; rail-to-rail output fully utilizes 12-bit ADC range.

Ionization Smoke Alarms IoT Remote Environmental Sensors

Use Scenario: Amplifying femtoamp-level chamber current changes during smoke particle ingress in UL-listed alarm modules.

IC Role / Device Role / Timing Role: Ultra-high-impedance current-to-voltage converter with guarded input traces and low-leakage PCB layout.

Use Value: 0.1 pA typical input bias current prevents false alarms from leakage; 125°C rating supports enclosed plastic housings.

Use Scenario: Signal conditioning for battery-operated soil moisture, air quality, or temperature nodes transmitting via LoRaWAN/NB-IoT.

IC Role / Device Role / Timing Role: Sensor front-end amplifier in duty-cycled measurement chains, active only during sampling bursts.

Use Value: 450 nA quiescent current enables >5-year operation on 2400 mAh Li-SOCl₂ cells; EMI hardening ensures reliable RF coexistence.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nanopower operational amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
LPV811DBVT Lower 370 µV max offset voltage; higher 450 nA typical supply current; same SOT-23-5 package. Better DC precision required (e.g., medical-grade pH sensing), where 3.5 mV offset of LPV801DBVT causes unacceptable error. Select LPV811DBVT when offset-limited accuracy dominates over battery life; verify layout compatibility with identical pinout.
TLV8811IDBVR 350 nA typical supply current; 1.5 mV max offset; 6 kHz GBW; same SOT-23-5 footprint but different pin assignment (V+ and OUT swapped). Cost-sensitive consumer IoT nodes where moderate precision suffices and PCB redesign is acceptable. Choose TLV8811IDBVR only if board layout allows pinout revision; not drop-in due to V+/OUT position swap.

Compared with LPV801DBVT, LPV811DBVT trades 110 nA higher quiescent current for 3.15 mV lower max offset - ideal for precision analog front-ends - while TLV8811IDBVR offers slightly lower IQ but requires PCB rework due to non-identical pin mapping, limiting retrofit use.

Availability

LPV801DBVT is available at Aetrix Electronics and suitable for CO gas detectors, PIR motion sensors, ionization smoke alarms, thermostats, and IoT remote sensors requiring stable component supply across extended product lifecycles.

Supply support for LPV801DBVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in precision amplifiers and low-power signal conditioning.

The LPV801DBVT belongs to TI's LPV8xx nanopower op-amp family, engineered specifically for battery- and energy-harvesting–powered sensing applications where multi-year operation and rail-to-rail performance at sub-2V supplies are mandatory.

FAQ

What is the maximum supply voltage for LPV801DBVT?

The LPV801DBVT supports a maximum supply voltage of 6 V absolute maximum, but its recommended operating range is 1.6 V to 5.5 V. Operation above 5.5 V risks permanent damage, while operation below 1.6 V may cause degraded gain-bandwidth and increased offset voltage drift. The 5.5 V upper limit ensures compatibility with standard 3.3 V and 5 V logic domains and Li-ion charging profiles.

Does LPV801DBVT support rail-to-rail input?

No, LPV801DBVT does not support rail-to-rail input. Its input common-mode voltage range extends from V− to (V+) – 0.9 V. While it senses down to the negative rail - enabling true single-supply use - it cannot accept signals within 0.9 V of the positive rail. This limitation is explicitly defined in the "Recommended Operating Conditions" table of the SNOSCZ3B datasheet and must be accounted for in bias network design.

Can LPV801DBVT drive capacitive loads directly?

LPV801DBVT is unity-gain stable but becomes unstable with capacitive loads >50 pF directly connected to its output. For loads exceeding this threshold - such as ADC input capacitance or long PCB traces - a series isolation resistor (RISO = 30–50 kΩ) must be placed between the output and the capacitor. This technique is validated in Section 7.4.4 and Figure 37 of the official datasheet to preserve phase margin and prevent oscillation.

Is LPV801DBVT suitable for electrochemical sensor potentiostats?

Yes, LPV801DBVT is explicitly validated for electrochemical potentiostat circuits, including three-terminal CO gas sensors (TIDA-00854 reference design). Its 0.1 pA input bias current, negative-rail input, rail-to-rail output, and EMI hardening make it ideal for maintaining precise WE–RE potential and converting pA–nA sensor currents with minimal error - as confirmed in Section 8.2 of the SNOSCZ3B datasheet.

What is the thermal resistance (θJA) of LPV801DBVT in SOT-23-5 package?

The junction-to-ambient thermal resistance (θJA) of LPV801DBVT in the DBV (SOT-23-5) package is 177.4 °C/W, as measured on a standard JEDEC 2-layer test board. This value assumes no copper pour or thermal vias; adding 1-in² copper pad with 4 thermal vias reduces effective θJA to ~65 °C/W. The device's 150 °C maximum junction temperature allows continuous operation at ambient up to 85 °C under typical 450 nA loading.

LPV801DBVT Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
SC-74A, SOT-753
Packaging:
Tape & Reel (TR)
Product Status:
Active
Amplifier Type:
General Purpose
Number of Circuits:
1
Output Type:
Rail-to-Rail
Slew Rate:
0.002V/µs
Gain Bandwidth Product:
8 kHz
-3db Bandwidth:
-
Current - Input Bias:
0.1 pA
Voltage - Input Offset:
550 µV
Current - Supply:
450nA
Current - Output / Channel:
4.7 mA
Voltage - Supply Span (Min):
1.6 V
Voltage - Supply Span (Max):
5.5 V
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-5

LPV801DBVT FAQ

1.How can I place an order for LPV801DBVT through Aetrix?

Please submit a Request for Quotation (RFQ) for LPV801DBVT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for LPV801DBVT reliable?

The price and inventory of LPV801DBVT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LPV801DBVT is usually 5 days.

3.What payment methods are accepted for LPV801DBVT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LPV801DBVT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for LPV801DBVT?

LPV801DBVT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your LPV801DBVT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for LPV801DBVT?

For technical support, including LPV801DBVT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LPV801DBVT requirements.

6.How does Aetrix verify that LPV801DBVT is sourced from the original manufacturer or authorized distributors?

All LPV801DBVT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LPV801DBVT meets industry standards.

7.What is the process for return or replacement of LPV801DBVT?

All LPV801DBVT units undergo pre-shipment inspection (PSI). If there is an issue with LPV801DBVT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The LPV801DBVT part is unused and in its original packaging.

Return procedure for LPV801DBVT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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