Analog Devices Inc. LTC5576IUF#TRPBF
- Part No.:
- LTC5576IUF#TRPBF
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF Mixers
- Package:
- 16-WQFN Exposed Pad
- Datasheet:
-
LTC5576IUF#TRPBF.pdf
- Description:
- IC MIXER DOWN CONVERTER 16QFN
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
LTC5576IUF#TRPBF from Analog Devices (formerly Linear Technology) is a high-linearity active upconverting mixer IC optimized for RF transmitter signal chains in 3–8 GHz bands. It delivers –0.6 dB conversion gain, 25 dBm OIP3, 14.1 dB noise figure at 5.8 GHz, and –154 dBm/Hz output noise floor with only 0 dBm LO drive. It serves as the core frequency translation stage in wideband wireless infrastructure transmitters.
For engineers reviewing the LTC5576IUF#TRPBF datasheet, LTC5576IUF#TRPBF pinout, LTC5576IUF#TRPBF application, or LTC5576IUF#TRPBF equivalent, key selection criteria include its single-ended LO input, differential RF input, integrated transformer-coupled single-ended output, enable-controlled shutdown, and operation across –40°C to 105°C with 5 V or 3.3 V supply.
Technical Context
The LTC5576IUF#TRPBF employs a double-balanced bipolar mixer core driven by a high-performance LO buffer amplifier, enabling wideband upconversion with low LO leakage and high input IP1dB (10.4 dBm at 5 V). Its differential input stage supports broadband 50 Ω matching via external balun or direct differential drive.
It integrates an on-die RF transformer for single-ended output, configurable for 3–8 GHz via external tuning components. The LO port is single-ended and impedance-matched from 1–8 GHz, requiring no external matching network for typical 0 dBm drive - simplifying RF front-end design while maintaining >35 dB IN-to-LO isolation and <–35 dBm LO-to-RF leakage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 3–8 GHz RF output; 30 MHz–6 GHz RF input; 1–8 GHz LO input - supports full 5G FR1/FR2 and fixed wireless access bands. |
| Conversion Gain | –0.6 dB typical at 5.8 GHz (5 V supply) - enables direct interface with PA drivers without intermediate gain stages. |
| OIP3 | 25 dBm at 5.8 GHz (5 V) - ensures high linearity for multi-carrier LTE/5G signals with low adjacent channel interference. |
| Noise Figure | 14.1 dB at 5.8 GHz - balances sensitivity and dynamic range in high-SNR transmit paths where DAC/IF noise dominates. |
| LO Drive Level | 0 dBm single-ended - eliminates need for LO buffer amplifiers, reducing BOM count and power consumption. |
| Supply & Current | 5 V or 3.3 V; 99 mA at 5 V - compatible with standard telecom power rails and supports low-power standby via EN pin. |
| Operating Temp | –40°C to 105°C case temperature - qualified for outdoor base station and industrial wireless equipment environments. |
Pinout & Package
16-lead (4 mm × 4 mm) plastic QFN package with exposed thermal pad (Pin 17 = GND). Requires soldering of exposed pad to PCB ground plane for thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TEMP (1) | Temperature monitor diode anode | Enables die temperature sensing using constant-current source; voltage slope ≈ –1.8 mV/°C for system thermal management. |
| IN+, IN– (2,3) | Differential RF input | Internally biased at 1.6 V DC; requires AC coupling; supports 50 Ω single-ended drive via external balun or direct differential drive. |
| LGND (4) | Input amplifier DC/RF return | Carries ~64 mA tail current; must connect to low-impedance ground; inductor insertion here may improve IP2 at sub-1 GHz. |
| EN (5) | Enable control input | Logic-high (>1.8 V) enables operation; logic-low (<0.5 V) shuts down core, reducing current to 1.3 mA for power savings. |
| VCC (6,7) | Positive supply | Accepts 4.5–5.3 V (5 V mode) or 3.1–3.5 V (3.3 V mode); bypass with 10 nF capacitor near each pin for stability. |
| IADJ (8) | Bias current adjustment | DC voltage ≈1.8 V; adding external pull-down resistor tunes mixer core current and trade-offs between gain, linearity, and power. |
| GND (9,11,12,13,14,17) | Ground terminals | Multiple GND pins and exposed pad ensure low-inductance RF grounding and thermal dissipation; all must connect to PCB ground plane. |
| OUT (10) | Single-ended RF output | Internally transformer-coupled; requires external matching network (e.g., shunt capacitor + series inductor) for target band. |
| LO (15) | Single-ended local oscillator input | 50 Ω matched from 1–8 GHz; internally biased at 1.7 V; requires DC blocking capacitor; accepts –6 to +6 dBm drive. |
| TP (16) | Factory test pin | Must be connected to ground in application; not intended for user functionality or signal routing. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated output transformer | Enables single-ended RF output without external balun; tunable from 3–8 GHz with minimal external components. |
| Low LO drive requirement | 0 dBm LO input achieves optimal linearity and noise - eliminates need for dedicated LO buffer amplifier stage. |
| High input P1dB | 10.4 dBm at 5.8 GHz (5 V) - accommodates high-level IF signals from DACs or modulators without compression. |
| Enable-controlled shutdown | Reduces supply current to 1.3 mA; turn-on/off time <0.6 µs - supports TDD systems and burst-mode transmission. |
| On-chip temperature sensor | Diode-based TEMP pin provides calibrated voltage vs. junction temperature (–1.8 mV/°C) for closed-loop thermal compensation. |
Applications
| 5G Massive MIMO Remote Radio Head | Fixed Wireless Access (FWA) CPE Transmitter |
|---|---|
Use Scenario: Transmit path in compact 5G NR FR1 (3.3–3.8 GHz) and FR2 (5.925–7.125 GHz) active antenna units with tight thermal and power constraints. IC Role / Device Role / Timing Role: Primary upconverting mixer translating baseband/IQ signals to RF band; replaces discrete mixer+transformer+buffer solutions. Use Value: 25 dBm OIP3 and –0.6 dB gain maintain EVM compliance under multi-carrier 100 MHz bandwidth signals; 0 dBm LO drive reduces LO chain complexity. |
Use Scenario: Outdoor customer premises equipment transmitting in 3.5 GHz or 5.8 GHz unlicensed bands for last-mile broadband delivery. IC Role / Device Role / Timing Role: Final-stage RF upconverter in wideband OFDM transmitter supporting 802.11ay and proprietary PHYs. Use Value: –154 dBm/Hz noise floor preserves SNR in high-gain receive paths; –40°C to 105°C rating ensures reliability in non-climate-controlled enclosures. |
| 4G/LTE Advanced Small Cell Base Station | Wireless Backhaul Transmitter Module |
Use Scenario: Compact macrocell or microcell BTS operating in 2.3–2.7 GHz or 3.4–3.8 GHz licensed bands with carrier aggregation support. IC Role / Device Role / Timing Role: High-linearity upconverter in digital predistortion (DPD)-enabled transmit chain. Use Value: 35 dB IN-to-LO isolation prevents LO pulling; low LO-OUT leakage (<–35 dBm) eases filtering requirements before PA stage. |
Use Scenario: Point-to-point 6–8 GHz E-band backhaul radio requiring high spectral purity and robustness over temperature. IC Role / Device Role / Timing Role: Frequency translator in dual-conversion architecture, upconverting IF to final E-band RF. Use Value: 8 GHz output capability and stable OIP3 across –40°C to 105°C enable single-part coverage of 71–76 GHz and 81–86 GHz bands via harmonic mixing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar active upconverting mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC1040LP4CE | Wider LO range (2–14 GHz), higher OIP3 (27 dBm), but requires +7 dBm LO drive and consumes 150 mA at 5 V. | Better suited for Ka-band upconversion; less suitable for low-LO-power 5G FR1 designs due to higher drive and power. | Select when >8 GHz output or highest linearity is critical; avoid if LO power budget is constrained. |
| MAX2039ETX+ | 3.3 V only, lower OIP3 (21 dBm), integrated LO synthesizer, but narrower RF output range (1.7–2.7 GHz). | Targets sub-3 GHz cellular infrastructure; lacks 3–8 GHz coverage and transformer-coupled output flexibility. | Choose for integrated LO synthesis in legacy LTE bands; not viable for 5G FR1/FR2 or FWA 5.8 GHz. |
Compared with HMC1040LP4CE and MAX2039ETX+, the LTC5576IUF#TRPBF uniquely balances ultra-low LO drive (0 dBm), wide 3–8 GHz output coverage, and high linearity (25 dBm OIP3) in a thermally robust QFN package - making it optimal for cost- and power-sensitive 5G/FWA transmitter designs where external LO sources are already available.
Availability
LTC5576IUF#TRPBF is available at Aetrix Electronics and suitable for 5G massive MIMO remote radio heads, fixed wireless access customer premises equipment, and wireless backhaul transmitter modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for LTC5576IUF#TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices acquired Linear Technology in 2017 and maintains its high-performance RF product portfolio, emphasizing precision analog, signal processing, and wireless infrastructure solutions.
The LTC5576IUF#TRPBF belongs to Linear's high-frequency active mixer family, designed specifically for wideband upconversion in next-generation wireless infrastructure where low LO power, high linearity, and thermal resilience are critical.
FAQ
What is the recommended LO drive level for optimal performance of the LTC5576IUF#TRPBF?
The LTC5576IUF#TRPBF achieves best-in-class linearity and noise figure with a nominal 0 dBm single-ended LO drive. Performance remains robust across –6 dBm to +6 dBm, but OIP3 degrades above +3 dBm and conversion gain drops below –4 dBm. For 5G FWA applications at 5.8 GHz, 0 dBm is the validated optimum per the datasheet's TA01b and G18 plots.
Can the LTC5576IUF#TRPBF operate from a 3.3 V supply, and what performance trade-offs occur?
Yes, the LTC5576IUF#TRPBF supports 3.3 V operation with R1 = 649 Ω. At 3.3 V, OIP3 decreases to 23 dBm (vs. 25 dBm at 5 V), noise figure rises to 12.8 dB (vs. 14.1 dB), and input P1dB falls to 8.5 dBm (vs. 10.4 dBm). Supply current drops to 85 mA. These trade-offs are acceptable for power-constrained FWA CPE where thermal headroom is limited.
How is the TEMP pin (Pin 1) used for die temperature monitoring in the LTC5576IUF#TRPBF?
The TEMP pin connects to an on-die diode anode through a 30 Ω resistor. Applying a constant 10 µA or 80 µA current and measuring the resulting voltage yields die temperature: at 25°C, voltage is 697 mV (10 µA) or 755 mV (80 µA), with a coefficient of –1.80 mV/°C (10 µA) or –1.61 mV/°C (80 µA). This enables real-time thermal derating in base station radios.
What external components are required for basic evaluation of the LTC5576IUF#TRPBF at 5.8 GHz?
A functional 5.8 GHz evaluation setup requires: 1000 pF DC-blocking caps on IN+/IN–, 10 nF VCC bypass caps, 1 µF bulk cap, 0.2 pF LO matching cap, 1:1 balun (e.g., Mini-Circuits ADT1-1WT), and a 2.61 kΩ resistor on IADJ for 5 V operation. The DC2322A evaluation board implements this configuration with verified layout and stack-up.
Does the LTC5576IUF#TRPBF support both low-side and high-side LO injection, and how does it affect matching?
Yes, the LTC5576IUF#TRPBF supports both low-side and high-side LO injection. The datasheet confirms fOUT = fLO ± fIN operation. External matching components (e.g., C3, L1 in Figure 1) must be re-optimized for the chosen injection scheme and target band - low-side LO at 4.9 GHz for 5.8 GHz output requires different C6/L1 values than high-side LO at 6.7 GHz.
LTC5576IUF#TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Package/Case:
- 16-WQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- RF Type:
- Cellular, WLAN
- Frequency:
- 3GHz ~ 8GHz
- Number of Mixers:
- 1
- Gain:
- -0.6dB
- Noise Figure:
- 17.5dB
- Secondary Attributes:
- -
- Current - Supply:
- 105mA
- Voltage - Supply:
- 3.1V ~ 5.3V
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-QFN (4x4)
LTC5576IUF#TRPBF FAQ
1.How can I place an order for LTC5576IUF#TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for LTC5576IUF#TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LTC5576IUF#TRPBF reliable?
The price and inventory of LTC5576IUF#TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LTC5576IUF#TRPBF is usually 5 days.
3.What payment methods are accepted for LTC5576IUF#TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LTC5576IUF#TRPBF transactions.
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4.How is shipping managed for LTC5576IUF#TRPBF?
LTC5576IUF#TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LTC5576IUF#TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LTC5576IUF#TRPBF?
For technical support, including LTC5576IUF#TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LTC5576IUF#TRPBF requirements.
6.How does Aetrix verify that LTC5576IUF#TRPBF is sourced from the original manufacturer or authorized distributors?
All LTC5576IUF#TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LTC5576IUF#TRPBF meets industry standards.
7.What is the process for return or replacement of LTC5576IUF#TRPBF?
All LTC5576IUF#TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with LTC5576IUF#TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LTC5576IUF#TRPBF part is unused and in its original packaging.
Return procedure for LTC5576IUF#TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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