Vishay General Semiconductor - Diodes Division LVE2560E-M3/P

Overview

LVE2560E-M3/P from Vishay General Semiconductor is a low forward voltage, single-phase, single in-line bridge rectifier rated for 25 A average forward current and 600 V repetitive peak reverse voltage, featuring GSIB-5S package, 360 A surge capability, and 0.74 V forward voltage at 12.5 A and 125 °C - used in telecom power supplies and high-efficiency server SMPS.

For engineers reviewing the LVE2560E-M3/P datasheet, LVE2560E-M3/P pinout, LVE2560E-M3/P application, or LVE2560E-M3/P equivalent, key selection criteria include thermal resistance (RθJC = 1 °C/W), junction temperature range (–55 to +150 °C), UL recognition (E312394), halogen-free RoHS-compliant M3 suffix, and 2500 VRMS dielectric strength.

Technical Context

This device integrates four silicon diodes in a single-phase full-wave bridge configuration within a thin, molded GSIB-5S package with matte tin-plated leads. Its oxide planar chip junction enables low VF (0.74 V @ 12.5 A, 125 °C) and high surge robustness (IFSM = 360 A, 8.3 ms sine wave).

Designed for high-reliability AC/DC conversion, it delivers 24 °C/W junction-to-ambient thermal resistance without heatsink and supports soldering per JESD 22-B106 (275 °C max, 10 s). Polarity is marked on body; mounting torque must not exceed 10 cm-kg.

Key Specifications

Pinout & Package

Package: GSIB-5S - thin, single in-line, epoxy-molded case meeting UL 94 V-0; 5-terminal configuration with integrated bridge topology (AC1, AC2, +, –, case tab grounded).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with VBO25-06 and GBU25J, the LVE2560E-M3/P offers superior thermal performance (RθJC = 1 °C/W), certified safety (UL E312394), and lower VF - making it optimal for space-constrained, high-efficiency, and safety-regulated AC/DC front-ends.

Availability

LVE2560E-M3/P is available at Aetrix Electronics and suitable for telecom power supply, server SMPS, and home appliance power module applications requiring stable component supply, consistent M3-grade compliance, and traceable lot-level sourcing.

Supply support for LVE2560E-M3/P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global supplier of discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The LVE2560E-M3/P belongs to Vishay's low-VF single in-line bridge rectifier product line, engineered for high-efficiency, high-surge AC/DC conversion in demanding power supply environments including telecom infrastructure and data center hardware.

FAQ

What is the maximum junction temperature rating for the LVE2560E-M3/P?

The LVE2560E-M3/P has a maximum junction temperature (TJ max.) of +150 °C, verified per datasheet revision 22-Aug-2023. This rating allows operation in high-ambient environments such as enclosed server power supplies. Derating curves confirm usable current capacity up to 118.7 °C case temperature with heatsink. The LVE2560E-M3/P must be mounted with recommended torque (5.7 cm-kg) to maintain thermal integrity at this limit.

Does the LVE2560E-M3/P have UL safety certification?

Yes, the LVE2560E-M3/P carries UL recognition file number E312394, confirming compliance with UL 60747-4 for semiconductor devices. This certification covers dielectric strength (2500 VRMS, 1 minute), flammability (UL 94 V-0), and construction suitability for end-product safety approvals. The LVE2560E-M3/P is approved for use in Class I and II equipment where reinforced insulation is required.

What does the "M3" suffix indicate in LVE2560E-M3/P?

The "M3" suffix denotes halogen-free, RoHS-compliant construction meeting JESD201 Class 1A whisker resistance requirements. It also signifies commercial-grade qualification and matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. The LVE2560E-M3/P uses epoxy meeting UL 94 V-0, distinguishing it from standard-grade variants lacking these environmental and reliability certifications.

How is thermal performance specified for the LVE2560E-M3/P?

Thermal performance is defined by RθJC = 1 °C/W (junction-to-case) and RθJA = 24 °C/W (junction-to-ambient, no heatsink). These values are measured per JEDEC standards with the case tab directly attached to a heatsink or PCB copper area. The LVE2560E-M3/P achieves 25 A IF(AV) only when TC ≤ 118.7 °C - requiring proper heatsinking. Its low RθJC enables efficient heat transfer in compact telecom and server designs.

What is the reverse recovery time (trr) of the LVE2560E-M3/P and why does it matter?

The LVE2560E-M3/P has a typical reverse recovery time (trr) of 309 ns, measured at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A. This parameter directly impacts switching losses and EMI in high-frequency SMPS designs. A lower trr like that of the LVE2560E-M3/P reduces turn-off energy dissipation and improves efficiency compared to slower rectifiers such as GBU25J (trr ≈ 500 ns), especially above 50 kHz operation.