Renesas M10042040054X0IWAR

Overview

M10042040054X0IWAR from Renesas is a 4Mb serial STT-MRAM non-volatile memory IC with Quad SPI interface, 54MHz DDR timing, 1.71–2.0V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write latency with persistent data retention, targeting real-time data logging in factory automation controllers.

For engineers reviewing the M10042040054X0IWAR datasheet, M10042040054X0IWAR pinout, M10042040054X0IWAR application, or M10042040054X0IWAR equivalent, key selection considerations include its QSPI x4 DDR interface timing, hardware/software write protection, 256-byte augmented storage array, JEDEC reset support, and compatibility with low-power industrial embedded systems requiring deterministic non-volatile writes.

Technical Context

This device implements spin-transfer torque magnetoresistive RAM (STT-MRAM) using 40nm pMTJ technology, enabling true random access with no erase cycles, virtually unlimited endurance (>10¹⁵ cycles), and 20-year data retention at 85°C. Its architecture supports Execute-In-Place (XIP) mode to eliminate per-access command overhead during burst reads.

The serial interface operates in QSPI (4-4-4) mode with double data rate clocking-latching address and data on both rising and falling edges of CLK-achieving effective throughput of 54MHz × 4 bits = 216 Mbps. It integrates dedicated registers for status, configuration, device ID, and user-programmable serial number, all accessible via standard SPI opcodes.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0mm × 6.0mm body, exposed thermal pad, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V04-G and CY14B104N-ZSP25XI, M10042040054X0IWAR provides superior bandwidth via QSPI DDR, eliminates backup power components, and offers finer-grained data protection-making it optimal for new 1.8V industrial designs demanding high write throughput and long-term data integrity without maintenance.

Availability

M10042040054X0IWAR is available at Aetrix Electronics and suitable for factory automation controllers, multifunction printers, and industrial monitoring gateways requiring stable component supply with guaranteed long-term availability and traceable sourcing.

Supply support for M10042040054X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

M10042040054X0IWAR belongs to Renesas' Persistent SRAM (P-SRAM) product line, engineered to replace battery-backed SRAM and legacy non-volatile memories in mission-critical industrial systems requiring zero-maintenance, high-endurance, and deterministic performance.

FAQ

What is the maximum operating frequency of M10042040054X0IWAR in Double Data Rate mode?

M10042040054X0IWAR supports a maximum clock frequency of 54MHz in DDR mode. Because data is sampled on both rising and falling edges of the clock, this yields an effective data rate of 216 Mbps in Quad SPI (4-4-4) configuration. This timing is validated across the full −40°C to +85°C industrial temperature range and 1.71–2.00V supply voltage.

Does M10042040054X0IWAR require an external backup power source?

No, M10042040054X0IWAR does not require any external backup power source. As a true non-volatile STT-MRAM device, it retains data indefinitely without batteries, supercapacitors, or external energy harvesting. All memory states-including configuration registers and augmented storage contents-are preserved across power cycles and deep power down modes.

How is write protection implemented on M10042040054X0IWAR?

M10042040054X0IWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables status register writes when enabled), and software-based via configuration bits in the Status Register (BPSEL[2:0] and TBSEL) that lock specific memory blocks. Both mechanisms can be used simultaneously to protect bootloader code, calibration data, and user parameters against accidental or malicious overwrites.

What package type is used for M10042040054X0IWAR?

M10042040054X0IWAR uses an 8-pad DFN (WSON) package measuring 5.0mm × 6.0mm with an exposed thermal pad. This compact, lead-free, RoHS-compliant package is pin-compatible with standard 8-pin SOIC footprints in terms of pad layout but offers lower profile and improved thermal performance-ideal for space-constrained industrial PCBs.

Can M10042040054X0IWAR be used in Execute-In-Place (XIP) mode?

Yes, M10042040054X0IWAR supports Execute-In-Place (XIP) mode. By sending a special XIP byte (0xAxh or 0xFxh) after the address, the device enters XIP mode, allowing sequential read operations without reissuing the read command for each access. This reduces instruction overhead and improves effective read throughput-especially valuable for executing firmware directly from MRAM in resource-constrained microcontrollers.