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Renesas M10042040054X0PWAY

Part No.:
M10042040054X0PWAY
Manufacturer:
Renesas
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixM10042040054X0PWAY.pdf
Description:
IC RAM 4MBIT 54MHZ 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,974

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Product details

Overview

M10042040054X0PWAY from Renesas is a 4Mb serial STT-MRAM non-volatile memory IC with Quad SPI interface, 54MHz DDR timing, industrial-plus temperature rating (−40°C to +105°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible random read/write performance with persistent data retention, targeting real-time data logging in factory automation controllers.

For engineers reviewing the M10042040054X0PWAY datasheet, M10042040054X0PWAY pinout, M10042040054X0PWAY application, or M10042040054X0PWAY equivalent, key selection criteria include its 1.71–2.0V/2.7–3.6V dual-voltage support, hardware/software write protection, 256-byte augmented storage array, and JEDEC Reset compliance - all critical for industrial embedded systems requiring deterministic non-volatility.

Technical Context

The M10042040054X0PWAY implements a 40nm pMTJ spin-transfer torque MRAM core with Quad SPI (4-4-4) interface supporting both SDR and DDR modes. Its architecture includes dedicated command/address/data paths, on-die voltage regulation, and dual low-power states (Deep Power Down and Hibernate) with full configuration retention.

It features a 24-bit address space mapping 4Mb (0x000000–0x07FFFF), a separate 256-byte Augmented Storage Array with per-section write protection, and register-based control of block protection (BPSEL[2:0]), top/bottom selection (TBSEL), and WP# enable (WP#EN) - enabling fine-grained data security without external logic.

Key Specifications

Parameter Value and Actual Design Meaning
Density 4 Megabit (512KB); supports byte-level random read/write without erase cycles
Interface Quad SPI (4-4-4) with DDR mode at 54MHz; enables 432 Mbps effective throughput
Operating Voltage 1.71V–2.00V or 2.70V–3.60V; dual-rail compatibility simplifies power design in mixed-voltage systems
Temperature Range Industrial Plus: −40°C to +105°C; qualified for extended thermal operation in enclosed industrial enclosures
Endurance & Retention Virtually unlimited write cycles (>10¹⁵) and >20-year data retention at 105°C; eliminates wear leveling firmware overhead
Package 8-pad DFN (WSON), 5.0mm × 6.0mm; surface-mount compatible with standard reflow profiles and high-density PCB layouts
Data Protection Hardware WP# pin + software-configurable block protect (BPSEL[2:0]) and top/bottom select (TBSEL); prevents accidental writes across defined memory regions

Pinout & Package

8-pad DFN (WSON) package, 5.0mm × 6.0mm footprint, wettable flank leads for automated optical inspection (AOI). Pin 1 marked by chamfered corner.

Pin/Terminal Circuit Role Design Meaning
1: CS# Chip Select Input Active-low enable; device enters standby when high; falling edge initiates instruction sequence
2: WP# / IO[2] Write Protect Input / Bidirectional Data 2 Hardware write lock for status register in SPI mode; functions as I/O[2] in Dual/Quad modes
3: SI / IO[0] Serial Input / Bidirectional Data 0 Command/address/data input in SPI mode; bidirectional in DPI/QPI; no internal pull-up
4: CLK Clock Input Synchronous timing source; rising edge latches command in DDR/SDR; both edges used for data in DDR
5: IO[3] Bidirectional Data 3 Quad-mode data path; must be tied to VCC if unused in lower-pin-count configurations
6: SO / IO[1] Serial Output / Bidirectional Data 1 Data output in SPI mode; bidirectional in DPI/QPI; always drives on falling clock edge (SDR & DDR)
7: VCC Power Supply Core and I/O supply; requires local 100nF decoupling; supports 1.8V or 3.0V nominal rails
8: VSS Ground Common reference for core and I/O; low-inductance connection required for noise immunity

Key Features

Feature Design Value
eXecute-In-Place (XIP) Enables continuous read/write sequences without repeated command overhead, reducing random access latency by up to 40% vs. standard SPI
Augmented Storage Array 256-byte user-programmable region with per-32-byte section write protection - ideal for storing calibration data or firmware signatures
JEDEC Reset Support Standardized reset command (C0h) ensures interoperability with host bootloaders and avoids proprietary initialization sequences
Dual Low-Power States Deep Power Down (IDPD) draws <1µA; Hibernate retains configuration while consuming <5µA - extends battery life in portable diagnostics equipment
Unique & Programmable IDs Factory-assigned 64-bit UID + 64-bit user-writable serial number - enables secure device authentication and traceability in regulated medical systems

Applications

Factory Automation Controller Medical Diagnostic Imaging Module

Use Scenario: Real-time logging of sensor fusion data and motion control parameters during CNC machine operation.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory for deterministic, low-latency write capture without garbage collection delays.

Use Value: Eliminates backup battery or capacitor requirements while sustaining >100k write cycles/hour over 10+ years of service life.

Use Scenario: Storing calibration coefficients and DICOM header metadata in portable ultrasound units with intermittent power.

IC Role / Device Role / Timing Role: Persistent configuration store with guaranteed write completion under brown-out conditions.

Use Value: Prevents image corruption during sudden power loss by completing writes within 3µs (tEDPD) and retaining data at 105°C.

Multifunction Printer Firmware Cache Industrial Ethernet Switch Configuration

Use Scenario: Caching font glyphs and job queue metadata across print jobs with frequent power cycling.

IC Role / Device Role / Timing Role: High-endurance serial flash replacement with zero-latency random access for glyph lookups.

Use Value: Enables instant-on printing by eliminating firmware load time; 40nm STT-MRAM cell structure ensures >20-year data retention.

Use Scenario: Storing MAC address tables, VLAN settings, and firmware update staging in DIN-rail mounted switches.

IC Role / Device Role / Timing Role: Secure, tamper-resistant configuration vault with hardware write protect (WP#) and block-level software locks.

Use Value: Prevents unauthorized configuration changes via physical pin assertion and register-controlled memory segmentation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress Semiconductors FM25V04-G 4Mb F-RAM; 1.8V only; max 40MHz SPI; no DDR mode; no Augmented Storage Array Limited to 1.8V systems; lacks quad I/O and hibernate mode; lower endurance than MRAM but faster single-byte writes Select for cost-sensitive 1.8V-only designs where DDR bandwidth and extended temp range are not required
Infineon Technologies CY14B104N-ZSP25XI 4Mb nvSRAM; 3V only; parallel interface; built-in lithium battery backup; no SPI interface Requires PCB space for backup battery; incompatible with SPI-based microcontrollers; higher board-level BOM cost Select only when legacy parallel bus architecture exists and battery-backed retention is mandated by system spec

Compared with FM25V04-G and CY14B104N-ZSP25XI, the M10042040054X0PWAY provides broader voltage flexibility (1.8V/3.0V), higher bandwidth via DDR Quad SPI, integrated hibernate mode, and a dedicated 256-byte protected storage region - making it optimal for new industrial designs prioritizing compactness, thermal robustness, and firmware security.

Availability

M10042040054X0PWAY is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostic imaging modules, multifunction printer firmware caches, and industrial Ethernet switch configurations requiring stable component supply across extended temperature and long product lifecycles.

Supply support for M10042040054X0PWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family is designed as Persistent SRAM (P-SRAM) - bridging the gap between volatile SRAM speed and non-volatile Flash reliability - specifically for industrial systems demanding zero-latency writes, extreme endurance, and wide-temperature operation without backup power.

FAQ

What is the operating voltage range supported by the M10042040054X0PWAY?

The M10042040054X0PWAY supports two independent voltage ranges: 1.71V to 2.00V and 2.70V to 3.60V. This dual-rail capability allows direct integration into both 1.8V and 3.3V system designs without level-shifting circuitry. The device automatically adapts to the applied VCC and maintains full functionality across either range, as verified in Renesas' Electrical Specifications table (Page 39).

Does the M10042040054X0PWAY require an external backup power source?

No, the M10042040054X0PWAY does not require any external backup power source. Its STT-MRAM technology provides true non-volatility: data is retained indefinitely upon power removal, with >20-year retention at 105°C. Unlike nvSRAM or battery-backed SRAM, the M10042040054X0PWAY eliminates batteries, supercapacitors, and associated failure modes while maintaining SRAM-like write performance.

How is write protection implemented on the M10042040054X0PWAY?

The M10042040054X0PWAY implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables status register writes when asserted), and software-based via configuration bits in the Status Register (WP#EN, BPSEL[2:0], TBSEL). These controls independently protect the main memory array and the 256-byte Augmented Storage Array, allowing granular security without external components.

What package type is used for the M10042040054X0PWAY?

The M10042040054X0PWAY uses an 8-pad DFN (WSON) package measuring 5.0mm × 6.0mm. This small-footprint, leadless package features wettable flanks for reliable solder-joint inspection and is RoHS/REACH compliant. Pinout matches industry-standard 8-pin SOIC for layout compatibility, though the physical form factor differs.

Can the M10042040054X0PWAY operate in Deep Power Down mode while preserving configuration data?

Yes, the M10042040054X0PWAY retains all register configurations, memory contents, and Augmented Storage Array data during Deep Power Down mode. Entry requires the EDP command (B9h); exit uses EXDPD (ABh). Total wake-up time is ≤400µs (tEXDPD), and current draw drops below 1µA - enabling ultra-low-power operation in battery-powered industrial sensors without data loss or reinitialization.

M10042040054X0PWAY Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
RAM
Technology:
MRAM (Magnetoresistive RAM)
Memory Size:
4Mbit
Memory Organization:
1M x 4
Memory Interface:
-
Clock Frequency:
54 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.71V ~ 2V
Operating Temperature:
-40°C ~ 105°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

M10042040054X0PWAY FAQ

1.How can I place an order for M10042040054X0PWAY through Aetrix?

Please submit a Request for Quotation (RFQ) for M10042040054X0PWAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M10042040054X0PWAY reliable?

The price and inventory of M10042040054X0PWAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M10042040054X0PWAY is usually 5 days.

3.What payment methods are accepted for M10042040054X0PWAY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M10042040054X0PWAY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M10042040054X0PWAY?

M10042040054X0PWAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M10042040054X0PWAY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M10042040054X0PWAY?

For technical support, including M10042040054X0PWAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M10042040054X0PWAY requirements.

6.How does Aetrix verify that M10042040054X0PWAY is sourced from the original manufacturer or authorized distributors?

All M10042040054X0PWAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M10042040054X0PWAY meets industry standards.

7.What is the process for return or replacement of M10042040054X0PWAY?

All M10042040054X0PWAY units undergo pre-shipment inspection (PSI). If there is an issue with M10042040054X0PWAY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M10042040054X0PWAY part is unused and in its original packaging.

Return procedure for M10042040054X0PWAY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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