Renesas M10042040108X0PSAR

Overview

M10042040108X0PSAR from Renesas is a 4Mb serial STT-MRAM non-volatile memory with QSPI interface, 108MHz SDR clock rate, 1.71–2.0V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers SRAM-compatible read/write timing, zero write latency, and persistent data retention without backup power - deployed in real-time industrial control systems requiring deterministic memory access.

For engineers reviewing the M10042040108X0PSAR datasheet, M10042040108X0PSAR pinout, M10042040108X0PSAR application, or M10042040108X0PSAR equivalent, key selection criteria include its 4Mb density, 8-pad WSON package, hardware/software write protection, 256-byte augmented storage array, and JEDEC Reset support for robust embedded firmware storage.

Technical Context

The M10042040108X0PSAR implements a 40nm pMTJ spin-transfer torque MRAM array with quad SPI (4-4-4) interface supporting both SDR (108MHz) and DDR (54MHz) modes. Its architecture includes dedicated command/address/data paths, on-die voltage regulation, and dual low-power states (Deep Power Down and Hibernate) that preserve configuration and data without external power loss.

It features eXecute-In-Place (XIP) capability to reduce instruction overhead during sequential reads, plus dual-layer data protection: hardware-based via WP# pin and software-configurable via status register bits (BPSEL[2:0], TBSEL, SNPEN). The 256-byte Augmented Storage Array is partitioned into eight 32-byte sections, each independently programmable and write-protectable.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0mm × 6.0mm, moisture sensitivity level 3 (MSL3), RoHS & REACH compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with FM25V04-G and CY14B104N-ZSP25XI, the M10042040108X0PSAR offers superior integration (QSPI/XIP/JEDEC Reset), wider temperature range, smaller 5×6mm WSON package, and true zero-power non-volatility - making it optimal for next-generation industrial edge nodes where size, reliability, and power autonomy are critical.

Availability

M10042040108X0PSAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and RoHS/REACH-compliant sourcing.

Supply support for M10042040108X0PSAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M10042040108X0PSAR belongs to Renesas' Persistent SRAM (P-SRAM) product line, engineered to replace battery-backed SRAM and legacy serial Flash in mission-critical embedded systems demanding instant-write non-volatility and extended temperature resilience.

FAQ

What is the operating voltage range for M10042040108X0PSAR?

The M10042040108X0PSAR operates from 1.71V to 2.00V. This 1.8V nominal supply range aligns with modern low-power microcontroller I/O domains and eliminates the need for level shifters in 1.8V system designs. Operation outside this range - including below 1.71V or above 2.00V - is not guaranteed and may cause data corruption or functional failure. Decoupling capacitance must be placed within 5mm of the VCC pin per Renesas layout recommendations.

Does M10042040108X0PSAR support Quad SPI (QPI) mode?

Yes, the M10042040108X0PSAR fully supports Quad SPI (QPI) mode with 4-4-4 command-address-data timing. In QPI mode, all four I/O pins (IO[0]–IO[3]) carry command, address, and data simultaneously, enabling peak throughput of 108MB/s at 108MHz. QPI entry is initiated via the Enable QPI (38h) instruction; the device remains in QPI until Exit QPI (FFh) is issued. This mode is mandatory for achieving maximum bandwidth in high-speed firmware update or data logging applications.

How does the Augmented Storage Array function in M10042040108X0PSAR?

The M10042040108X0PSAR includes a 256-byte Augmented Storage Array mapped to addresses 000000h–0000FFh, divided into eight 32-byte sections. Each section can be independently programmed and write-protected using configuration bits in the Status Register. This structure allows secure storage of calibration data, cryptographic keys, or device-specific identifiers - with section-level granularity preventing unintended overwrites while preserving flexibility for field updates.

What is the purpose of the WP# pin on M10042040108X0PSAR?

The WP# pin on the M10042040108X0PSAR provides hardware-level write protection for the Status Register when the WP#EN bit (SR[7]) is set to '1'. When WP# is driven low under this condition, writes to the Status Register - which controls block protection, top/bottom selection, and serial number lock - are blocked. This prevents accidental or malicious modification of memory protection settings during system operation or debug sessions, adding a physical layer of security beyond software-only configuration.

Is M10042040108X0PSAR qualified for automotive applications?

The M10042040108X0PSAR is specified for industrial-plus temperature range (−40°C to +105°C) and meets AEC-Q100 stress test requirements for memory devices. While not formally AEC-Q100 certified, its thermal rating, 40nm pMTJ STT-MRAM process, and qualification testing align with under-hood ECU and ADAS module requirements. For automotive production use, Renesas recommends verifying compliance with specific vehicle manufacturer PPAP documentation and performing board-level reliability validation per ISO 16750.