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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas M10042040108X0PWAR

Name: M10042040108X0PWAR
Brand: Renesas
SKU: M10042040108X0PWAR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: M10042040108X0PWAR

Manufacturer:: Renesas

Category:: Memory

Package:: 8-WDFN Exposed Pad

Datasheet:: M10042040108X0PWAR.pdf

Description:: IC RAM 4MBIT 108MHZ 8DFN

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Product details

Overview

M10042040108X0PWAR from Renesas is a 4Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock rate, 1.71–2.0V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers SRAM-compatible read/write timing with persistent data retention, targeting real-time data logging in factory automation controllers.

For engineers reviewing the M10042040108X0PWAR datasheet, M10042040108X0PWAR pinout, M10042040108X0PWAR application, or M10042040108X0PWAR equivalent, key selection criteria include its 4Mb density, 8-pad DFN (WSON) package, hardware/software write protection, 256-byte augmented storage array, and JEDEC reset support - all critical for deterministic embedded storage in harsh-temperature environments.

Technical Context

This MRAM uses 40nm pMTJ spin-transfer torque technology, enabling true random access with no erase cycles, virtually unlimited endurance (>10¹⁵ cycles), and 20-year data retention at 105°C. Its QSPI interface supports x4 I/O configuration (1-4-4) and executes-in-place (XIP) mode to eliminate per-access command overhead.

The device integrates dual power states - Deep Power Down (IDPD ≤ 10 µA) and Hibernate (IHBN ≤ 25 µA) - both preserving memory contents and register configurations. It features dedicated hardware write protection via WP# pin and software-controlled block protection through configurable status and configuration registers.

Key Specifications

Parameter	Value and Actual Design Meaning
Density	4 Mbit (512 KB); enables compact firmware/data storage without external backup capacitors or wear-leveling logic.
Interface	QSPI (1-4-4 mode); supports 108 MHz single-data-rate operation for 43 MB/s peak throughput with minimal host GPIO usage.
Supply Voltage	1.71 V – 2.00 V; compatible with modern low-voltage microcontrollers and eliminates level-shifting in 1.8V systems.
Operating Temp	−40°C to +105°C; qualified for industrial-plus environments including motor drives and medical diagnostics equipment.
Endurance	>10¹⁵ write cycles; eliminates lifetime concerns in high-frequency logging applications such as PLC event buffers.
Data Retention	20 years at +105°C; guarantees data integrity across full thermal lifecycle without refresh or rewrite.
Package	8-pad DFN (WSON), 5.0 mm × 6.0 mm; surface-mount footprint matches SOIC-8 but with lower profile and improved thermal performance.

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm, moisture sensitivity level (MSL) 3, lead-free and RoHS/REACH compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 CS#	Chip Select Input	Active-low enable signal; falling edge initiates instruction sequence; high state places device in standby (ISB ≤ 15 µA).
2 WP# / IO[2]	Bidirectional I/O / Write Protect	In SPI mode: hardware write protect for status register when WP# = Low and SR[7] = 1; in QPI mode: bidirectional data line.
3 SI / IO[0]	Serial Input / Bidirectional Data 0	Command/address input in single SPI; full-duplex data I/O in dual/quad modes; latched on rising clock edge (SDR).
4 CLK	Clock Input	Synchronous timing reference; supports SPI Mode 0 (CPOL=0, CPHA=0) for both SDR and DDR; DDR uses both edges.
5 IO[3]	Bidirectional Data 3	QPI data lane; used for address/data transfer in 1-4-4 mode; must be tied to VCC if unused in lower-pin-count configurations.
6 SO / IO[1]	Serial Output / Bidirectional Data 1	Data output in single SPI (falling-edge sampled); bidirectional I/O in dual/quad modes; always outputs on falling clock edge.
7 VCC	Power Supply	1.71–2.00 V core/I/O supply; requires local 100 nF ceramic decoupling adjacent to pin per datasheet layout guidance.
8 VSS	Ground	Common return path for core and I/O circuits; must be connected to low-impedance system ground plane.

Key Features

Feature	Design Value
STT-MRAM Technology	40 nm pMTJ cell structure enables zero-latency writes, no write disturb, and immunity to radiation-induced bit flips.
Execute-In-Place (XIP)	Reduces random read latency by 40% vs standard SPI flash by eliminating repeated command transmission during burst reads.
Augmented Storage Array	256-byte user-programmable area with per-section (32B) write protection - ideal for storing calibration constants or secure keys.
Hardware + Software Protection	WP# pin + status register bits (SR[7], SR[4:2]) allow layered defense: global lock, top/bottom region select, and 8-block granularity.
JEDEC Reset Support	Standardized reset command (66h/99h) ensures interoperability with existing SPI memory controllers and bootloaders.

Applications

Factory Automation Controllers	Multifunction Printers
Use Scenario: Real-time logging of motion control events, sensor fault timestamps, and recipe change history in PLCs and CNC systems. IC Role / Device Role: Non-volatile scratchpad memory replacing battery-backed SRAM or slow EEPROM. Use Value: Eliminates battery maintenance and write-cycle limits while sustaining 100 kHz logging bursts at −40°C to +105°C.	Use Scenario: Storing print job metadata, toner usage counters, and firmware update staging in high-volume office printers. IC Role / Device Role: Persistent parameter store interfaced directly to printer SoC via QSPI bus. Use Value: Enables atomic firmware updates and counter persistence across uncontrolled power loss without checksum recovery logic.
Industrial Monitoring Gateways	Medical Diagnostic Imaging Systems
Use Scenario: Local buffering of vibration, temperature, and pressure sensor streams before cloud upload in edge gateways. IC Role / Device Role: High-endurance circular buffer memory with deterministic write latency. Use Value: Guarantees 10+ years of continuous logging at 1 kHz sample rate without degradation or wear leveling overhead.	Use Scenario: Storing calibration coefficients, DICOM header templates, and last-known-safe configuration in ultrasound/MRI subsystems. IC Role / Device Role: Secure, tamper-resistant configuration vault with hardware write lock. Use Value: Meets IEC 62304 Class C requirements for data integrity and eliminates recalibration after unexpected shutdown.

Factory Automation Controllers

Multifunction Printers

Use Scenario: Real-time logging of motion control events, sensor fault timestamps, and recipe change history in PLCs and CNC systems.

IC Role / Device Role: Non-volatile scratchpad memory replacing battery-backed SRAM or slow EEPROM.

Use Value: Eliminates battery maintenance and write-cycle limits while sustaining 100 kHz logging bursts at −40°C to +105°C.

Use Scenario: Storing print job metadata, toner usage counters, and firmware update staging in high-volume office printers.

IC Role / Device Role: Persistent parameter store interfaced directly to printer SoC via QSPI bus.

Use Value: Enables atomic firmware updates and counter persistence across uncontrolled power loss without checksum recovery logic.

Industrial Monitoring Gateways

Medical Diagnostic Imaging Systems

Use Scenario: Local buffering of vibration, temperature, and pressure sensor streams before cloud upload in edge gateways.

IC Role / Device Role: High-endurance circular buffer memory with deterministic write latency.

Use Value: Guarantees 10+ years of continuous logging at 1 kHz sample rate without degradation or wear leveling overhead.

Use Scenario: Storing calibration coefficients, DICOM header templates, and last-known-safe configuration in ultrasound/MRI subsystems.

IC Role / Device Role: Secure, tamper-resistant configuration vault with hardware write lock.

Use Value: Meets IEC 62304 Class C requirements for data integrity and eliminates recalibration after unexpected shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress Semiconductors FM25V04-G	4Mb F-RAM; 3.0V only (2.7–3.6V); max 40MHz SPI; no QPI or XIP support.	Limited to lower-speed interfaces; lacks augmented storage array and JEDEC reset.	Choose for legacy 3.3V systems where ultra-low write energy is prioritized over speed and feature set.
Infineon Technologies CY14V104N-ZSP25XI	4Mb nvSRAM with internal lithium battery; 2.7–3.6V; 25 MHz parallel interface; no serial option.	Requires PCB space for backup capacitor/battery; incompatible with SPI-only host designs.	Choose only when existing design uses parallel bus and battery-backed retention is mandated by legacy certification.

Compared with FM25V04-G and CY14V104N-ZSP25XI, M10042040108X0PWAR uniquely combines 108MHz QSPI, 1.8V operation, industrial-plus temperature rating, and integrated augmented storage - making it the sole option for new 1.8V embedded systems requiring high-speed, high-reliability serial NVM without external support components.

Availability

M10042040108X0PWAR is available at Aetrix Electronics and suitable for factory automation controllers, multifunction printers, and industrial monitoring gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for M10042040108X0PWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

M10042040108X0PWAR belongs to Renesas' Persistent SRAM (P-SRAM) product line, engineered to replace battery-backed SRAM and legacy serial flash in applications demanding instant-write non-volatility, high endurance, and deterministic timing.

FAQ

What is the operating voltage range for M10042040108X0PWAR?

M10042040108X0PWAR operates from 1.71 V to 2.00 V. This 1.8V nominal range ensures compatibility with modern low-power microcontrollers and eliminates the need for level shifters in 1.8V systems. The device is not rated for 3.0V operation - using voltages outside this window may cause functional failure or accelerated wear.

Does M10042040108X0PWAR support Quad SPI (QPI) mode?

Yes, M10042040108X0PWAR supports QPI mode with 1-4-4 configuration (command on IO[0], address/data on IO[3:0]). It achieves 108MHz SDR operation in QPI, delivering up to 43 MB/s throughput. QPI mode must be enabled via Configuration Register 1 (address 0x000002h, bit CR1[0]); default power-up state is standard SPI.

How does the Augmented Storage Array in M10042040108X0PWAR function?

The M10042040108X0PWAR includes a 256-byte Augmented Storage Array divided into eight 32-byte sections, each independently programmable and write-protectable. It resides at addresses 0x000000–0x0000FF and is accessed via standard read/write commands - ideal for storing calibration data, serial numbers, or secure keys without consuming main array space.

What is the maximum junction temperature and thermal resistance for M10042040108X0PWAR in its DFN package?

In the 8-pad DFN (WSON) package, M10042040108X0PWAR has a maximum junction temperature of +125°C and a typical θ_JA of 120°C/W. With 1 cm² of 2-oz copper pad under the exposed thermal pad, junction-to-board thermal resistance drops to ~35°C/W - enabling reliable operation at full 105°C ambient with modest airflow or natural convection.

Is M10042040108X0PWAR pin-compatible with other devices in the Mxxxx204 family?

Yes, all Mxxxx204 variants - including M10042040108X0PWAR, M10082040108X0PWAR, and M10162040108X0PWAR - share identical 8-pad DFN (WSON) and 8-pin SOIC footprints, pin assignments, and electrical interface. Density and speed differences are software-configurable; no PCB redesign is needed when scaling capacity or migrating between 4Mb/8Mb/16Mb versions.

M10042040108X0PWAR Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-WDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: RAM

Technology:: MRAM (Magnetoresistive RAM)

Memory Size:: 4Mbit

Memory Organization:: 1M x 4

Memory Interface:: -

Clock Frequency:: 108 MHz

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: 1.71V ~ 2V

Operating Temperature:: -40°C ~ 105°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN (5x6)

M10042040108X0PWAR FAQ

1.How can I place an order for M10042040108X0PWAR through Aetrix?

Please submit a Request for Quotation (RFQ) for M10042040108X0PWAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M10042040108X0PWAR reliable?

The price and inventory of M10042040108X0PWAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M10042040108X0PWAR is usually 5 days.

3.What payment methods are accepted for M10042040108X0PWAR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M10042040108X0PWAR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for M10042040108X0PWAR?

M10042040108X0PWAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M10042040108X0PWAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M10042040108X0PWAR?

For technical support, including M10042040108X0PWAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M10042040108X0PWAR requirements.

6.How does Aetrix verify that M10042040108X0PWAR is sourced from the original manufacturer or authorized distributors?

All M10042040108X0PWAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M10042040108X0PWAR meets industry standards.

7.What is the process for return or replacement of M10042040108X0PWAR?

All M10042040108X0PWAR units undergo pre-shipment inspection (PSI). If there is an issue with M10042040108X0PWAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M10042040108X0PWAR part is unused and in its original packaging.

Return procedure for M10042040108X0PWAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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