Renesas M10082040054X0IWAR

Overview

M10082040054X0IWAR from Renesas is an 8Mb serial STT-MRAM memory IC with QSPI interface, 1.71–2.0V or 2.7–3.6V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write timing, non-volatility, and 54MHz DDR operation for real-time data logging in factory automation controllers.

For engineers reviewing the M10082040054X0IWAR datasheet, M10082040054X0IWAR pinout, M10082040054X0IWAR application, or M10082040054X0IWAR equivalent, key selection criteria include its dual-voltage support, hardware/software write protection, 256-byte augmented storage array, JEDEC reset compliance, and guaranteed 10¹⁵ write cycles at industrial temperature.

Technical Context

The M10082040054X0IWAR implements a 40nm pMTJ spin-transfer torque MRAM core with true random access, enabling byte-level writes without erase cycles. Its QSPI interface supports 1-4-4 command-address-data configuration and both SDR (108MHz) and DDR (54MHz) modes - this part is specifically configured for DDR at 54MHz.

It integrates dedicated registers for status, configuration, device identification (64-bit unique ID), and user-programmable serial number. The architecture includes hardware write protection via WP# pin and software-controlled block protection (Top/Bottom, BP[2:0]), plus two low-power states: Deep Power Down (IDPD) and Hibernate (IHBN), both preserving data and register settings.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm, wettable flank, RoHS-compliant. Pin 1 marked by top-side dot.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V08-G and CY14B108N-ZSP25XI, the M10082040054X0IWAR provides broader voltage flexibility, higher DDR throughput, integrated QPI, and superior endurance-making it optimal for new 1.8V/3.3V hybrid industrial designs requiring future-proof serial memory scalability.

Availability

M10082040054X0IWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and RoHS/REACH-compliant sourcing.

Supply support for M10082040054X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family is designed as Persistent SRAM (P-SRAM) replacements-targeting applications needing SRAM-like performance with Flash-like non-volatility, especially where endurance, latency, and low-power retention are critical.

FAQ

What is the operating voltage range supported by the M10082040054X0IWAR?

The M10082040054X0IWAR supports two distinct supply ranges: 1.71V to 2.00V and 2.70V to 3.60V. This dual-voltage capability allows direct integration into both 1.8V and 3.3V industrial systems without level-shifting. The device automatically adapts to the applied VCC and meets all AC/DC specifications across both ranges per the Renesas datasheet revision Feb.21.23.

Does the M10082040054X0IWAR support Quad SPI (QPI) mode, and what are its timing implications?

Yes, the M10082040054X0IWAR supports full QPI (4-4-4) mode with command, address, and data transferred simultaneously across four I/O lines. In DDR mode at 54MHz, this yields 432 Mbps effective bandwidth. Timing requires strict adherence to clock edge usage: command latched on rising edge, address/data on both edges, and output always aligned to falling edge - details are specified in Table 4 of the official datasheet.

How does the Augmented Storage Array in the M10082040054X0IWAR differ from the main memory array?

The Augmented Storage Array is a dedicated 256-byte region, organized in eight 32-byte sections, each independently programmable and write-protectable. Unlike the main 8Mb array, it resides in a separate address space (000000h–0000FFh) and supports enhanced security features including section-level lock bits and factory-default reset behavior post-reflow. It is intended for calibration data, serial numbers, or cryptographic keys.

What low-power states does the M10082040054X0IWAR support, and how do they affect data retention?

The M10082040054X0IWAR supports Deep Power Down (EDP command B9h) and Hibernate (EHBN command BAh). Both states reduce current to microamp levels while preserving all memory contents and register configurations. Data retention remains guaranteed for 20+ years at 85°C in either state, with exit times of ≤400 µs (EXDPD) and ≤450 µs (EXHIB), enabling rapid wake-up in energy-constrained edge nodes.

Is the M10082040054X0IWAR pin-compatible with other members of the Mxxxx204 family, such as M1004204 or M1016204?

Yes, all Mxxxx204 variants-including M1004204, M1008204, and M1016204-share identical 8-pad DFN (WSON) and 8-pin SOIC footprints, pin assignments, and electrical interface definitions. Density differences (4Mb/8Mb/16Mb) do not affect pinout, timing, or command set, enabling drop-in replacement within the same package and voltage grade, subject to address space validation in firmware.