Renesas M10082040054X0IWAY

Overview

M10082040054X0IWAY from Renesas is an 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, 1.71–2.0V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible random read/write latency with persistent data retention-ideal for real-time data logging in factory automation controllers.

For engineers reviewing the M10082040054X0IWAY datasheet, M10082040054X0IWAY pinout, M10082040054X0IWAY application, or M10082040054X0IWAY equivalent, this page provides verified specifications, validated pin functions, confirmed industrial use cases, and two rigorously cross-checked alternative parts for memory subsystem design.

Technical Context

The M10082040054X0IWAY implements a 40nm pMTJ spin-transfer torque MRAM array with Quad SPI (4-4-4) interface supporting Double Data Rate mode at 54MHz. Its architecture includes dedicated command/address/data paths, on-die voltage regulation, and hardware/software write protection via WP# pin and configurable status register bits.

It features eXecute-In-Place (XIP) capability to reduce instruction overhead during sequential access, plus two low-power states-Deep Power Down (tEXDPD ≤ 400µs) and Hibernate (tEXHIB ≤ 450µs)-with full configuration retention. The 256-byte Augmented Storage Array supports per-section (32B) programmability and independent write protection.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0mm × 6.0mm body, wettable flank leads, JEDEC MO-229 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with CY14V108L-SP25XI and MR25H10MDF, the M10082040054X0IWAY uniquely combines 1.8V operation, QSPI DDR at 54MHz, and integrated 256-byte protected storage-enabling compact, low-power, high-reliability memory subsystems without external components or voltage translation.

Availability

M10082040054X0IWAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial networking applications requiring stable component supply, long-term lifecycle assurance, and RoHS/REACH-compliant sourcing.

Supply support for M10082040054X0IWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family was designed as Persistent SRAM (P-SRAM) replacements-delivering true non-volatility with SRAM-like timing for mission-critical industrial memory applications where data integrity and endurance are paramount.

FAQ

What is the operating voltage range for M10082040054X0IWAY?

The M10082040054X0IWAY operates exclusively within 1.71V to 2.00V. This 1.8V nominal range is fixed per its ordering code '1' (see datasheet Table 1). It is not compatible with 3.0V systems-the 2.7–3.6V variant uses different part numbering (e.g., M10082040054X0ISAY). Operating outside 1.71–2.00V violates absolute maximum ratings and may cause data corruption or permanent damage to the M10082040054X0IWAY.

Does M10082040054X0IWAY support both SDR and DDR SPI modes?

Yes, the M10082040054X0IWAY supports Double Data Rate (DDR) SPI mode at 54MHz, as indicated by its '0054' speed grade. It does not support 108MHz SDR-its base speed grade is DDR-only. The device implements SPI Mode 0 (CPOL=0, CPHA=0) for both SDR and DDR, and SPI Mode 3 (CPOL=1, CPHA=1) for SDR only. All timing parameters for DDR operation-including dual-edge sampling-are fully specified in the M10082040054X0IWAY datasheet.

What is the purpose of the Augmented Storage Array in M10082040054X0IWAY?

The M10082040054X0IWAY includes a dedicated 256-byte Augmented Storage Array divided into eight 32-byte sections. Each section can be individually programmed and write-protected via configuration registers. This area is electrically and logically isolated from the main 8Mb memory array-making it ideal for storing immutable data such as calibration coefficients, cryptographic keys, or device-specific identifiers that must survive field firmware updates without risking main memory corruption.

How does hardware write protection work on M10082040054X0IWAY?

Hardware write protection on the M10082040054X0IWAY is controlled by the WP# pin (Pin 2). When WP# is driven low *and* the WP#EN bit (SR[7]) in the Status Register is set to '1', the Status Register becomes read-only-blocking WRITE STATUS REGISTER commands. This prevents accidental modification of block protection bits (BPSEL[2:0]) or top/bottom selection (TBSEL). The WP# pin has no internal pull-up; it must be actively driven high or low-floating is prohibited per the M10082040054X0IWAY datasheet.

Is M10082040054X0IWAY pin-compatible with other densities in the Mxxxx204 family?

Yes, the M10082040054X0IWAY shares identical pinout, package footprint, and signal assignment with all Mxxxx204 variants-including M10042040054X0IWAY (4Mb) and M10162040054X0IWAY (16Mb)-in the same 8-pad DFN (WA) package. Memory density is determined solely by internal array configuration; no PCB layout change is needed when scaling capacity within the same speed/temperature/package combination. This allows seamless BOM optimization across product tiers using the M10082040054X0IWAY footprint.