Renesas M10082040054X0PSAR

Overview

M10082040054X0PSAR from Renesas is an 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, industrial-plus temperature rating (−40°C to +105°C), and 1.71–2.0V or 2.7–3.6V dual supply support. It delivers SRAM-compatible random read/write latency with persistent data retention, used in real-time industrial control logging and firmware parameter storage.

For engineers reviewing the M10082040054X0PSAR datasheet, M10082040054X0PSAR pinout, M10082040054X0PSAR application, or M10082040054X0PSAR equivalent, this page provides verified package mapping, QSPI timing constraints, hardware/software write protection mechanisms, endurance/retention specifications, and validated alternative MRAM options for industrial embedded systems requiring zero-latency non-volatility.

Technical Context

The M10082040054X0PSAR implements a 40nm pMTJ spin-transfer torque MRAM array with Quad SPI (4-4-4) interface supporting both SDR and DDR modes. Its architecture includes dedicated command/address/data buffers, on-die voltage regulation, and dual power domains for VCC core/I/O operation.

It features eXecute-In-Place (XIP) capability to reduce instruction overhead during sequential access, plus two low-power states-Deep Power Down (IDPD) and Hibernate-with full configuration retention and sub-µs wake-up. The device integrates a 256-byte Augmented Storage Array with per-section write protection and supports JEDEC-standard reset sequences.

Key Specifications

Pinout & Package

8-pin SOIC package (5.2mm × 5.2mm), RoHS-compliant, moisture sensitivity level (MSL) 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial MRAM applications.

Compared with M10082040054X0PSAR, MR25H80 offers simpler timing but sacrifices DDR bandwidth and dual-voltage flexibility, while M10082040108X0PSAR trades DDR efficiency for higher SDR clock rate - both require revalidation of low-power state entry/exit timing and write-protect configuration flow.

Availability

M10082040054X0PSAR is available at Aetrix Electronics and suitable for factory automation logging, medical diagnostic device storage, and industrial router firmware caching requiring stable component supply across extended temperature and long product lifecycles.

Supply support for M10082040054X0PSAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.

The Mxxxx204 family is designed as Persistent SRAM (P-SRAM) replacements - targeting applications needing true random-access non-volatility with SRAM-like timing, eliminating battery backup and wear-leveling complexity in mission-critical embedded systems.

FAQ

What is the maximum clock frequency supported by M10082040054X0PSAR in Double Data Rate mode?

M10082040054X0PSAR supports 54MHz DDR clock frequency, delivering 108 MT/s effective throughput. This is confirmed in the Ordering Options table (Page 4) and Signal Description section (Page 7), where "0054" in the part number denotes 54MHz DDR operation. The device does not support higher DDR frequencies; exceeding 54MHz violates AC timing specifications including tCH and tCL.

Does M10082040054X0PSAR support both 1.8V and 3.3V supply voltages simultaneously?

No - M10082040054X0PSAR operates on a single VCC supply rail: either 1.71–2.00V (1.8V nominal) or 2.70–3.60V (3.3V nominal), as defined in the Ordering Options (Page 4, "1" = 1.8V, "3" = 3.3V). The "1" in the M10082040054X0PSAR part number indicates 1.8V operation. Mixed-voltage operation is not supported; VCC must be stable within one range during operation.

How is write protection implemented on M10082040054X0PSAR?

M10082040054X0PSAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables status register writes when enabled) and software-based via Status Register bits BPSEL[2:0] and TBSEL. Configuration is detailed in Table 12 (Page 17) and Section 11.1. Both mechanisms must be correctly initialized after power-up or reflow to prevent unintended writes to memory or registers.

What is the purpose of the Augmented Storage Array in M10082040054X0PSAR?

The Augmented Storage Array is a dedicated 256-byte memory region (address 000000h–0000FFh) divided into eight 32-byte sections, each independently programmable and write-protectable. As specified on Page 16 (Table 9), it is intended for storing critical calibration data, security keys, or device-specific identifiers separate from the main 8Mb array - enhancing system robustness against accidental overwrite during firmware updates.

Is M10082040054X0PSAR pin-compatible with standard 8-pin SOIC serial flash devices?

Yes - M10082040054X0PSAR uses the industry-standard 8-pin SOIC package (5.2mm × 5.2mm) with identical pinout (CS#, WP#/IO[2], SI/IO[0], CLK, IO[3], SO/IO[1], VCC, VSS) to common serial NOR flash and EEPROM devices. This enables drop-in replacement in existing layouts, though firmware must be updated to support QSPI commands, DDR timing, and MRAM-specific status register handling.