Renesas M10082040054X0PSAY

Overview

M10082040054X0PSAY from Renesas is an 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, industrial-plus temperature rating (−40°C to +105°C), and 1.71–2.0V or 2.7–3.6V dual-voltage operation. It delivers SRAM-compatible read/write latency, unlimited endurance, and data retention for real-time data logging in factory automation controllers.

For engineers reviewing the M10082040054X0PSAY datasheet, M10082040054X0PSAY pinout, M10082040054X0PSAY application, or M10082040054X0PSAY equivalent, this page provides verified package mapping (8-pin SOIC), confirmed QSPI x4 interface behavior, validated hardware/software write protection mechanisms, and two field-qualified alternative MRAM parts with documented functional alignment and key trade-offs.

Technical Context

The M10082040054X0PSAY implements a 40nm pMTJ spin-transfer torque MRAM array with quad SPI (QPI) interface supporting 1-4-4 command-address-data nomenclature. It operates in Double Data Rate mode at 54MHz, latching address and data on both clock edges while outputting data on falling edges per JEDEC-compliant timing.

It integrates dedicated registers for status control, configuration (four registers), device identification (64-bit unique ID), user-programmable serial number, and 256-byte augmented storage array segmented into eight 32-byte protected sections. Power management includes Deep Power Down (3µs entry, 400µs exit) and Hibernate modes with full configuration retention.

Key Specifications

Pinout & Package

8-pin SOIC package (5.2mm × 5.2mm, RoHS-compliant), pin-compatible with standard SPI memory devices. Pin functions align with JEDEC-standard QPI signaling and support hardware write protection via dedicated WP# input.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial MRAM applications.

Compared with M10082040054X0PSAY, MR25H80 trades DDR performance and dual-voltage flexibility for lower unit cost in fixed 3.3V systems, while M10082040108X0PSAY preserves identical functionality except for clock interface timing-making it a direct drop-in replacement where DDR is unsupported.

Availability

M10082040054X0PSAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for M10082040054X0PSAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family was designed as persistent SRAM (P-SRAM) replacements-delivering true non-volatility with SRAM-like timing for mission-critical data logging, configuration storage, and firmware overlay in harsh-temperature environments.

FAQ

What is the operating voltage range supported by M10082040054X0PSAY?

M10082040054X0PSAY supports two independent voltage ranges: 1.71V to 2.00V and 2.70V to 3.60V. This dual-voltage capability allows seamless integration into both 1.8V and 3.3V system designs without level-shifting circuitry. The device automatically adapts to the applied VCC level and maintains full functionality-including QSPI timing compliance and write protection-across both ranges. M10082040054X0PSAY does not operate outside these specified windows.

Does M10082040054X0PSAY support DDR mode, and what is its maximum clock frequency?

Yes, M10082040054X0PSAY supports Double Data Rate (DDR) mode at 54MHz, achieving an effective 108MB/s throughput by sampling address and data on both clock edges. In DDR mode, commands are latched on the rising edge, while address and data use both edges-per JEDEC-compliant timing. This is distinct from its SDR-capable sibling M10082040108X0PSAY. M10082040054X0PSAY does not support SDR at 108MHz.

How is hardware write protection implemented on M10082040054X0PSAY?

M10082040054X0PSAY implements hardware write protection via the WP# pin, which controls status register writability when the WP#EN bit (SR[7]) is set to 1. When WP# is driven low, the status register becomes read-only, preventing modification of block protection bits and other critical settings. WP# has no internal pull-up and must be actively driven-tying it to VCC disables hardware protection. This mechanism works exclusively in Single SPI mode and is independent of software-based protection schemes.

What is the purpose and structure of the Augmented Storage Array in M10082040054X0PSAY?

The Augmented Storage Array in M10082040054X0PSAY is a dedicated 256-byte memory region divided into eight 32-byte programmable sections, each individually addressable and write-protectable. It resides at fixed addresses 0x000000–0x0000FF and is intended for storing calibration data, security keys, or device-specific identifiers. Unlike main memory, this array supports byte-level writes without erase cycles and retains full protection state across power cycles. M10082040054X0PSAY guarantees its integrity under Industrial Plus temperature conditions.

Can M10082040054X0PSAY retain data during deep power-down mode?

Yes, M10082040054X0PSAY retains all stored data-including main memory, augmented storage array, and configuration registers-during Deep Power Down mode. Entry requires ≤3µs and exit takes ≤400µs, with no data loss or register reset. The device maintains its full configuration state (e.g., protection bits, QPI mode setting) and requires no reinitialization upon wake-up. This behavior is validated across the full −40°C to +105°C operating range and is intrinsic to STT-MRAM technology.