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Renesas M10082040054X0PWAR
- Part No.:
- M10082040054X0PWAR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
M10082040054X0PWAR.pdf
- Description:
- IC RAM 8MBIT 54MHZ 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,265
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Product details
Overview
M10082040054X0PWAR from Renesas is an 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, industrial-plus temperature rating (−40°C to +105°C), and 1.71–2.0V or 2.7–3.6V dual-voltage operation. It delivers SRAM-compatible read/write latency, unlimited endurance, and data retention for real-time data logging in factory automation controllers.
For engineers reviewing the M10082040054X0PWAR datasheet, M10082040054X0PWAR pinout, M10082040054X0PWAR application, or M10082040054X0PWAR equivalent, key selection criteria include its 8-pad DFN (WSON) package, hardware/software write protection, 256-byte augmented storage array, JEDEC reset support, and compatibility with SPI Mode 0/3 across SDR/DDR modes.
Technical Context
The M10082040054X0PWAR implements a 40nm pMTJ spin-transfer torque MRAM core with quad-SPI (4-4-4) interface supporting both Single Data Rate (SDR) and Double Data Rate (DDR) protocols. Its architecture includes dedicated command/address/data paths, on-die voltage regulation, and independent 256-byte augmented storage array with per-section write protection.
It operates in three power states - active, standby, and low-power hibernate/deep power-down - with full configuration retention during state transitions. All instructions are executed via an 8-bit instruction register, and XIP (eXecute-In-Place) mode reduces command overhead for sequential access patterns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 8Mbit (1,048,576 × 8-bit organization); supports full random read/write without erase cycles |
| Interface | QSPI (4-4-4) with SDR up to 108MHz or DDR up to 54MHz; compatible with standard SPI host controllers |
| Voltage Range | 1.71–2.00V or 2.70–3.60V; dual-voltage support enables direct integration into 1.8V or 3.3V systems |
| Temp Range | Industrial Plus: −40°C to +105°C; qualified for extended-temperature industrial control and medical diagnostics |
| Endurance | Virtually unlimited (>10¹⁵ cycles); eliminates wear-leveling firmware overhead required in Flash/EEPROM |
| Data Retention | ≥20 years at +105°C; guaranteed non-volatility without backup power or capacitors |
| Package | 8-pad DFN (WSON), 5.0mm × 6.0mm; footprint-compatible with industry-standard SOIC-8 and low-power serial NOR/FRAM |
Pinout & Package
8-pad DFN (WSON) package, 5.0mm × 6.0mm body, 0.5mm pitch, exposed thermal pad (not electrically connected). RoHS-compliant, halogen-free, moisture sensitivity level (MSL) 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS# | Chip Select Input | Active-low enable signal; falling edge initiates instruction latch; high-Z output when deasserted |
| WP# / IO[2] | Bidirectional I/O or Hardware Write Protect | In SPI mode: hardware lock for status register; in QPI/DPI: bidirectional data lane 2 |
| SI / IO[0] | Input or Bidirectional Data 0 | Command/address/data input in SDR; bidirectional lane 0 in dual/quad modes |
| CLK | Clock Input | Synchronous timing reference; rising/falling edges used per SDR/DDR mode per Table 4 |
| IO[3] | Bidirectional Data 3 | Quad-mode data lane 3; must be tied high if unused in single/dual mode |
| SO / IO[1] | Output or Bidirectional Data 1 | Data output in SDR; bidirectional lane 1 in dual/quad modes; always outputs on falling clock edge |
| VCC | Power Supply | Single supply for core and I/O; supports 1.8V or 3.3V operation with internal regulation |
| VSS | Ground | Common reference for core and I/O; requires local 100nF decoupling adjacent to pin |
Key Features
| Feature | Design Value |
|---|---|
| STT-MRAM Technology | 40nm pMTJ cell enables zero-write-latency, byte-addressable non-volatility without erase blocks |
| Hardware + Software Protection | WP# pin + configurable block protect bits (BPSEL[2:0]) + top/bottom selection (TBSEL) prevent unintended writes |
| Augmented Storage Array | 256-byte user-programmable space, divided into eight 32-byte sections, each independently write-protectable |
| JEDEC Reset Support | Standard reset command (66h) restores device to known state without power cycle - critical for field firmware recovery |
| eXecute-In-Place (XIP) | Reduces instruction overhead by enabling continuous read bursts without repeated command transmission |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time logging of PLC I/O states, motion controller parameters, and sensor calibration data during machine runtime. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing volatile configuration and operational history with sub-100ns write latency. Use Value: Eliminates battery-backed SRAM or slow Flash writes; ensures deterministic data capture even during unexpected power loss. | Use Scenario: Storing patient-specific calibration coefficients, firmware update staging buffers, and diagnostic event logs in portable ultrasound or ECG units. IC Role / Device Role / Timing Role: High-reliability parameter storage with guaranteed 20-year retention at +105°C ambient. Use Value: Meets IEC 60601-1 long-term stability requirements without external energy storage or refresh circuitry. |
| Industrial Control And Monitoring | Data Switches And Routers |
Use Scenario: Caching network stack state, routing table snapshots, and secure boot keys in DIN-rail mounted edge gateways. IC Role / Device Role / Timing Role: Persistent SRAM replacement interfacing directly to ARM Cortex-M7/M33 MCU SPI peripherals. Use Value: Enables instant resume after brownout; avoids Flash wear-out from frequent configuration updates. | Use Scenario: Storing MAC address tables, port mapping metadata, and QoS policy rules subject to dynamic reconfiguration. IC Role / Device Role / Timing Role: Low-latency, high-endurance serial memory accessed via FPGA or switch ASIC SPI master. Use Value: Supports >100k daily write cycles to forwarding tables without degradation - impossible with standard serial NOR. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial non-volatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress Semiconductors FM25V05 | 512Kb F-RAM; 40MHz SPI; 2.7–3.6V only; no DDR mode; no augmented storage array | Limited density and voltage flexibility; lower endurance than MRAM but faster write cycle time | Prefer for cost-sensitive, low-density (<1Mb), 3.3V-only designs where ultra-fast single-byte writes dominate |
| Infineon Technologies CY14V108N | 8Mb nvSRAM; 100MHz parallel interface; requires external VCAP capacitor; 3.3V only | Parallel bus increases PCB routing complexity and pin count; capacitor dependency adds BOM cost and reliability risk | Prefer only when legacy parallel interface is mandated and board space allows VCAP placement |
Compared with FM25V05 and CY14V108N, the M10082040054X0PWAR offers higher density in serial form factor, dual-voltage operation, DDR timing headroom, and integrated hardware/software protection - making it optimal for new industrial designs prioritizing footprint, flexibility, and long-term data integrity.
Availability
M10082040054X0PWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, extended temperature operation, and guaranteed 20-year data retention.
Supply support for M10082040054X0PWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The M10082040054X0PWAR belongs to Renesas' Persistent SRAM (P-SRAM) product line, designed specifically to replace battery-backed SRAM and legacy serial Flash in mission-critical industrial systems demanding zero-latency writes, infinite endurance, and extended-temperature reliability.
FAQ
What is the operating voltage range supported by the M10082040054X0PWAR?
The M10082040054X0PWAR supports two distinct VCC ranges: 1.71V to 2.00V for 1.8V systems, and 2.70V to 3.60V for 3.3V systems. It does not operate across the entire 1.71–3.60V span - users must select one voltage domain during design and ensure stable rail regulation within the chosen range. Both ranges are fully specified for all performance parameters including 54MHz DDR timing and −40°C to +105°C operation.
Does the M10082040054X0PWAR require an external capacitor for non-volatility like nvSRAM devices?
No, the M10082040054X0PWAR does not require any external capacitor. As a true MRAM device, it retains data inherently through magnetic tunnel junctions - eliminating the need for backup capacitors, batteries, or charge pumps. This simplifies BOM, improves long-term reliability, and removes capacitor aging and leakage concerns present in nvSRAM solutions such as the CY14V108N.
How is write protection implemented on the M10082040054X0PWAR?
The M10082040054X0PWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables status register writes when enabled), and software-based via configuration bits in the Status Register (BPSEL[2:0], TBSEL, SNPEN). These mechanisms can be used independently or concurrently to protect main memory, augmented storage array, and serial number registers against accidental or malicious modification.
What package type is used for the M10082040054X0PWAR, and is it pin-compatible with other serial memories?
The M10082040054X0PWAR uses an 8-pad DFN (WSON) package measuring 5.0mm × 6.0mm with 0.5mm pitch. Its pinout matches industry-standard serial NOR Flash and FRAM devices in the same footprint (e.g., SOIC-8 pin-compatible layout), enabling drop-in replacement in many existing designs - provided voltage, timing, and instruction set compatibility are verified per the datasheet.
Can the M10082040054X0PWAR be used in DDR mode at 54MHz while operating at 1.8V?
Yes, the M10082040054X0PWAR is fully specified for Double Data Rate (DDR) operation at 54MHz across both voltage ranges - including 1.71–2.00V. The 0054 performance grade in the part number explicitly denotes DDR-54MHz capability, and electrical characteristics in Tables 14–15 of the datasheet confirm timing compliance at 1.8V with tV < 9.26ns setup/hold margins under industrial-plus conditions.
M10082040054X0PWAR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 8Mbit
- Memory Organization:
- 2M x 4
- Memory Interface:
- -
- Clock Frequency:
- 54 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.71V ~ 2V
- Operating Temperature:
- -40°C ~ 105°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
M10082040054X0PWAR FAQ
1.How can I place an order for M10082040054X0PWAR through Aetrix?
Please submit a Request for Quotation (RFQ) for M10082040054X0PWAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M10082040054X0PWAR reliable?
The price and inventory of M10082040054X0PWAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M10082040054X0PWAR is usually 5 days.
3.What payment methods are accepted for M10082040054X0PWAR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M10082040054X0PWAR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M10082040054X0PWAR?
M10082040054X0PWAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M10082040054X0PWAR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M10082040054X0PWAR?
For technical support, including M10082040054X0PWAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M10082040054X0PWAR requirements.
6.How does Aetrix verify that M10082040054X0PWAR is sourced from the original manufacturer or authorized distributors?
All M10082040054X0PWAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M10082040054X0PWAR meets industry standards.
7.What is the process for return or replacement of M10082040054X0PWAR?
All M10082040054X0PWAR units undergo pre-shipment inspection (PSI). If there is an issue with M10082040054X0PWAR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M10082040054X0PWAR part is unused and in its original packaging.
Return procedure for M10082040054X0PWAR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M10082040054X0PWAR Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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