Renesas M10082040108X0ISAY

Overview

M10082040108X0ISAY from Renesas is an 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock speed, 1.71–2.0V supply, and industrial temperature range (−40°C to +85°C) in 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write timing, zero write latency, and unlimited endurance for real-time data logging in factory automation controllers.

For engineers reviewing the M10082040108X0ISAY datasheet, M10082040108X0ISAY pinout, M10082040108X0ISAY application, or M10082040108X0ISAY equivalent, key selection criteria include its persistent SRAM behavior, hardware/software write protection, 256-byte augmented storage array, JEDEC reset support, and compatibility with SPI Mode 0/3 in both SDR and DDR configurations.

Technical Context

This MRAM uses 40nm pMTJ spin-transfer torque technology, enabling true random access with no erase cycles and deterministic sub-100ns write latency. Its architecture supports Execute-In-Place (XIP), reducing command overhead during sequential reads.

The device implements dual protection: hardware-based via WP# pin (active-low, requires external drive) and software-based via configurable status register bits (BPSEL[2:0], TBSEL, SNPEN). It also features two low-power states-Deep Power Down (3µs entry, 400µs exit) and Hibernate (3µs entry, 450µs exit)-with full configuration retention.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0mm × 6.0mm, exposed thermal pad, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V08-G and CY14V108N-ZSP25XI, M10082040108X0ISAY offers higher bandwidth (108MHz vs. 40/25MHz), smaller 5×6mm WSON package, QPI/XIP support for faster code execution, and zero-battery non-volatility - making it optimal for space-constrained, high-throughput industrial edge nodes.

Availability

M10082040108X0ISAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed 1.8V-compatible non-volatile memory.

Supply support for M10082040108X0ISAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 product line delivers persistent SRAM functionality using STT-MRAM technology - designed specifically for industrial systems needing instant-write, high-endurance, and zero-power-retention memory without batteries or capacitors.

FAQ

What is the operating voltage range for M10082040108X0ISAY?

M10082040108X0ISAY operates from 1.71V to 2.00V. This 1.8V nominal range ensures compatibility with modern low-voltage microcontrollers and eliminates the need for level shifters. The device is not rated for 3.3V operation - applying voltages outside this window may cause permanent damage or unpredictable behavior. Always verify V_CC stability with local decoupling before issuing commands to M10082040108X0ISAY.

Does M10082040108X0ISAY support Quad SPI (QPI) mode?

Yes, M10082040108X0ISAY supports full Quad SPI (QPI) with 4-4-4 command-address-data transfer. It operates in QPI mode at up to 108MHz in Single Data Rate configuration. The device also supports SPI Mode 0 (CPOL=0, CPHA=0) and SPI Mode 3 (CPOL=1, CPHA=1), but QPI functionality is only enabled in Mode 0. All QPI instructions require proper initialization via the Enable QPI command (38h) before use - attempting QPI without enabling will result in undefined responses from M10082040108X0ISAY.

How does the Augmented Storage Array in M10082040108X0ISAY work?

The Augmented Storage Array in M10082040108X0ISAY is a dedicated 256-byte region mapped to addresses 000000h–0000FFh, divided into eight 32-byte sections. Each section can be individually programmed and write-protected via configuration registers. Unlike main memory, this area supports enhanced security features including section-level lock bits and independent protection controls. It is commonly used to store calibration data, device serial numbers, or cryptographic keys - and remains fully accessible even when main array protection is active in M10082040108X0ISAY.

What is the endurance specification of M10082040108X0ISAY?

M10082040108X0ISAY has virtually unlimited endurance due to its STT-MRAM technology - specified as ≥10¹⁵ write cycles per bit across the full temperature range. Unlike Flash or EEPROM, there is no wear-out mechanism; each write is physically identical and causes no cumulative degradation. This enables continuous logging, firmware patching, or configuration updates without lifetime constraints - a key differentiator confirmed in Renesas' reliability reports for M10082040108X0ISAY.

Can M10082040108X0ISAY retain data during deep power-down mode?

Yes, M10082040108X0ISAY retains all stored data and register configurations during Deep Power Down mode. Entry requires the EDP command (B9h); exit uses EXDPD (ABh). Total exit time is ≤400µs, and current draw drops to <1µA. Crucially, no data loss occurs, and no reinitialization is needed upon wake - the device resumes operation exactly where it left off. This behavior is guaranteed across the full −40°C to +85°C range for M10082040108X0ISAY.