Renesas M10082040108X0IWAR

Overview

M10082040108X0IWAR from Renesas is an 8Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR operation, 1.71–2.0V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It serves as persistent SRAM replacement in real-time data logging and firmware storage applications where instant write persistence and infinite endurance are critical.

For engineers reviewing the M10082040108X0IWAR datasheet, M10082040108X0IWAR pinout, M10082040108X0IWAR application, or M10082040108X0IWAR equivalent, key selection considerations include its 108MHz SDR QSPI timing, hardware/software write protection (WP# pin + configuration registers), 256-byte augmented storage array, JEDEC reset support, and compatibility with existing SPI-based memory layouts requiring zero-latency non-volatility.

Technical Context

The M10082040108X0IWAR implements a 40nm pMTJ spin-transfer torque MRAM array with true random-access read/write capability and SRAM-compatible timing. Its QSPI interface supports 1-4-4 command-address-data nomenclature and operates in Single Data Rate mode at up to 108MHz using rising-edge clock latching for commands/addresses and falling-edge output for data.

It integrates dual power domains (1.8V core/I/O), hardware write protection via dedicated WP# pin, software-configurable block protection (BP[2:0]) and top/bottom selection, plus two low-power states-Deep Power Down (3µs entry, 400µs exit) and Hibernate-with full data retention and register state preservation across both modes.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package, 5.0mm × 6.0mm body, exposed thermal pad, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V08-G and CY14B108N-ZSP25XI, the M10082040108X0IWAR offers higher interface bandwidth (108MHz vs. 40MHz or parallel-only), lower voltage operation (1.8V vs. 3.0V), and integrated features like augmented storage and JEDEC reset - making it optimal for new industrial designs targeting compact layout, low power, and robust data persistence.

Availability

M10082040108X0IWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed RoHS/REACH compliance.

Supply support for M10082040108X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets.

The Mxxxx204 product line delivers persistent SRAM (P-SRAM) functionality using STT-MRAM technology, designed specifically for industrial and medical applications demanding instant-write non-volatility, extreme endurance, and seamless SPI integration.

FAQ

What is the operating voltage range for M10082040108X0IWAR?

The M10082040108X0IWAR operates from 1.71V to 2.00V. This 1.8V nominal supply range is optimized for compatibility with modern low-power microcontrollers and SoCs. Operation outside this range is not guaranteed, and the device enters undefined behavior below 1.71V or above 2.00V. Decoupling capacitors must be placed near the VCC pin to maintain stable rail integrity during high-speed QSPI transfers.

Does M10082040108X0IWAR support Quad SPI (QPI) mode?

No, the M10082040108X0IWAR supports only Single Data Rate (SDR) operation in QSPI 1-4-4 mode - it does not support Double Data Rate (DDR) or true QPI command sets. The datasheet confirms SDR-only operation at 108MHz, with commands and addresses latched on the rising clock edge and data output on the falling edge. This simplifies controller integration while maintaining high throughput for industrial firmware and logging use cases.

How is write protection implemented on M10082040108X0IWAR?

M10082040108X0IWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables status register writes when enabled) and software-based via configuration bits (BP[2:0], TBSEL) in the Status Register. Both mechanisms can be used independently or concurrently. The WP# pin has no internal pull-up and must be actively driven; tying it to VCC disables hardware protection. Software protection allows fine-grained memory region locking without external components.

What is the purpose of the Augmented Storage Array in M10082040108X0IWAR?

The Augmented Storage Array in M10082040108X0IWAR is a dedicated 256-byte memory space, divided into eight 32-byte sections, each individually programmable and write-protectable. It is physically and logically separate from the main 8Mb MRAM array. This area is intended for storing calibration data, security keys, or device-specific identifiers - values that require high reliability and selective protection without affecting main memory operations. Its contents persist across all power modes including Deep Power Down.

Is M10082040108X0IWAR pin-compatible with other devices in the Mxxxx204 family?

Yes, all Mxxxx204 devices - including M1004204, M1008204, and M1016204 - share identical 8-pad DFN (WSON) and 8-pin SOIC pinouts and signal assignments. The M10082040108X0IWAR uses the same CS#, WP#/IO[2], SI/IO[0], CLK, IO[3], SO/IO[1], VCC, and VSS pin mapping as other variants. This allows direct density upgrades (e.g., from 4Mb to 8Mb) on the same PCB layout without redesign, provided voltage and timing constraints remain satisfied.