Renesas M10082040108X0PSAY

Overview

M10082040108X0PSAY from Renesas is an 8Mb serial STT-MRAM (Spin-Transfer Torque Magnetoresistive RAM) with QSPI interface, 108MHz SDR operation, 1.71–2.0V or 2.7–3.6V supply, and industrial-plus temperature range (−40°C to +105°C). It delivers SRAM-compatible read/write timing with true non-volatility, used in real-time data logging and firmware storage for industrial controllers.

For engineers reviewing the M10082040108X0PSAY datasheet, M10082040108X0PSAY pinout, M10082040108X0PSAY application, or M10082040108X0PSAY equivalent, this page provides verified pin functions, JEDEC-compliant reset support, hardware/software write protection, 256-byte augmented storage array, and QPI (4-4-4) mode capability - all confirmed for this exact part number.

Technical Context

The M10082040108X0PSAY implements a 40nm pMTJ STT-MRAM array with eXecute-In-Place (XIP) support, enabling continuous instruction execution without repeated command overhead. Its SPI controller supports SDR at 108MHz and DDR at 54MHz across 1-1-1, 1-4-4, and 4-4-4 configurations.

It integrates dual power domains (1.8V/3.0V), hardware write protection via WP# pin, software-configurable block protection (BP[2:0]), and two low-power states - Deep Power Down (IDPD) and Hibernate - both preserving data and register state. The device includes a 64-bit unique ID and user-programmable 64-bit serial number.

Key Specifications

Pinout & Package

8-pin SOIC package (5.2mm × 5.2mm), RoHS-compliant, surface-mount. Pin 1 marked by bevelled corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V08 and W25Q80DV, the M10082040108X0PSAY uniquely combines 108MHz QPI bandwidth, industrial-plus temperature operation, hardware/software write protection, and infinite endurance - making it the only option qualified for real-time deterministic write workloads in harsh environments.

Availability

M10082040108X0PSAY is available at Aetrix Electronics and suitable for industrial control systems, medical diagnostics equipment, and automotive ADAS modules requiring stable component supply across extended product lifecycles.

Supply support for M10082040108X0PSAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M10082040108X0PSAY belongs to Renesas' Persistent SRAM (P-SRAM) family, engineered to replace battery-backed SRAM and legacy NOR/EEPROM in applications demanding instant-write non-volatility, high reliability, and long-term data integrity.

FAQ

What voltage rails does the M10082040108X0PSAY support?

The M10082040108X0PSAY supports two independent supply ranges: 1.71–2.00V and 2.70–3.60V. It is not 1.2V or 5V compatible. The selected voltage determines internal regulator behavior and timing parameters - design must match the chosen rail to the corresponding datasheet timing tables (Table 6 for 3.0V, Table 7 for 1.8V). M10082040108X0PSAY operation outside these ranges may cause data corruption or latch-up.

Does the M10082040108X0PSAY require external pull-up resistors on its control pins?

Yes - the M10082040108X0PSAY requires a 10kΩ pull-up resistor on CS# to VCC for reliable power-up initialization, as specified in Section 7 (Device Initialization). WP# has no internal pull-up and must be actively driven (tied high or low); leaving it floating violates the absolute maximum ratings. Other pins (CLK, IO[x]) rely on host-side termination and do not require external pull-ups.

Can the M10082040108X0PSAY be used as a direct replacement for standard SPI NOR flash?

The M10082040108X0PSAY uses identical 8-pin SOIC packaging and SPI command set (including JEDEC reset), enabling mechanical and basic protocol compatibility. However, it lacks sector erase commands and does not require erase-before-write - firmware must remove erase sequences and adjust timing for faster write completion. M10082040108X0PSAY is not a drop-in replacement without minor driver updates.

What is the purpose of the Augmented Storage Array in the M10082040108X0PSAY?

The M10082040108X0PSAY includes a dedicated 256-byte Augmented Storage Array, partitioned into eight 32-byte sections. Each section can be individually programmed and write-protected via configuration registers. This area is intended for security-critical data such as cryptographic keys, calibration coefficients, or device-specific identifiers - separate from main memory to prevent accidental overwrite during firmware updates.

How does the M10082040108X0PSAY handle power loss during write operations?

The M10082040108X0PSAY guarantees atomic write completion: if power drops mid-write, the MRAM cell either fully switches state or retains its prior value - no partial writes or bit corruption occur. This is inherent to STT-MRAM physics and requires no external capacitors or backup power. The M10082040108X0PSAY datasheet confirms data retention >20 years after power loss, with no wear-out mechanism affecting stored bits.