My Inquiry
My Account
Renesas M10162040054X0IWAR
- Part No.:
- M10162040054X0IWAR
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
M10162040054X0IWAR.pdf
- Description:
- IC RAM 16MBIT 54MHZ 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,249
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
M10162040054X0IWAR from Renesas is a 16Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, 1.71–2.0V supply, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write performance with persistent data retention-ideal for real-time industrial control logging where power loss must not corrupt state.
For engineers reviewing the M10162040054X0IWAR datasheet, M10162040054X0IWAR pinout, M10162040054X0IWAR application, or M10162040054X0IWAR equivalent, this page provides verified technical context, pin-level design meaning, JEDEC-compliant reset support, hardware/software write protection, and XIP-enabled low-latency execution-in-place capability for deterministic embedded firmware storage.
Technical Context
The M10162040054X0IWAR implements a 40nm pMTJ spin-transfer torque MRAM array with quad SPI (QPI: 4-4-4) interface supporting Double Data Rate mode at 54MHz. Its architecture includes dedicated command/address/data buffers, on-die voltage regulation, and dual low-power states (Deep Power Down and Hibernate) that preserve configuration and data without external backup.
It features a 256-byte Augmented Storage Array-separate from main memory-with per-section (32-byte) programmability and individual write protection. Register mapping includes Status, Configuration (1–4), Device ID, Unique ID, and Serial Number registers-all accessible via standard SPI instructions with JEDEC Reset compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16Mbit (2,097,152 bytes); supports full random-access reads/writes with no erase cycles |
| Interface | Quad SPI (QPI 4-4-4); enables 216MB/s effective throughput in DDR mode at 54MHz |
| Supply Voltage | 1.71V–2.00V; compatible with 1.8V system rails and eliminates level-shifting in modern low-voltage controllers |
| Operating Temp | −40°C to +85°C (Industrial); validated for continuous operation in factory automation enclosures |
| Endurance & Retention | Virtually unlimited write cycles (>10¹⁵) and >20-year data retention at 85°C-no wear leveling required |
| Package | 8-pad DFN (WSON), 5.0mm × 6.0mm; RoHS-compliant, surface-mountable, and footprint-compatible with SOIC-8 alternatives |
| Power Modes | Deep Power Down (IDPD ≤ 2µA) and Hibernate (IHBN ≤ 15µA); both retain full memory content and register state |
Pinout & Package
8-pad DFN (WSON), 5.0mm × 6.0mm, moisture-sensitive level 3, exposed thermal pad (not electrically connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS# | Chip Select Input | Active-low enable; falling edge initiates instruction latch; high-Z output when deasserted |
| WP# / IO[2] | Bidirectional I/O or Hardware Write Protect | In SPI mode: hardware lock for Status Register when WP# = Low and WP#EN = 1; in QPI: bidirectional data line IO[2] |
| SI / IO[0] | Input or Bidirectional Data 0 | In SPI: serial input only; in QPI: bidirectional data line IO[0] for command/address/data |
| CLK | Clock Input | Synchronous timing reference; DDR mode uses both rising/falling edges for address/data transfer |
| IO[3] | Bidirectional Data 3 | QPI-only; carries command/address/data in 4-4-4 mode; may be tied to VCC if unused |
| SO / IO[1] | Output or Bidirectional Data 1 | In SPI: serial output only (data valid on falling edge); in QPI: bidirectional data line IO[1] |
| VCC | Core & I/O Supply | 1.71–2.00V primary power; requires local 100nF decoupling per datasheet layout guidelines |
| VSS | Ground Reference | Common return for core and I/O; must be low-impedance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| eXecute-In-Place (XIP) | Enables sequential instruction execution without repeated command overhead-reduces random read latency by up to 40% vs standard SPI |
| Hardware + Software Protection | WP# pin locks Status Register; configurable block protect (BPSEL[2:0]) and top/bottom selection (TBSEL) prevent unintended writes to memory sections |
| Augmented Storage Array | 256-byte user-programmable area split into eight 32-byte sections, each independently write-protectable for secure calibration or firmware metadata |
| JEDEC Reset Support | Standardized reset command (66h) restores device to known operational state-critical for field-upgrade reliability |
| Unique & Programmable IDs | 64-bit factory-assigned UID + 64-bit user-writable serial number-enables traceability and secure device binding in OEM systems |
Applications
| Factory Automation | Multifunction Printers |
|---|---|
Use Scenario: Real-time motion controller logs position history and fault events during servo axis operation. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing timestamped encoder data and error codes between power cycles. Use Value: Eliminates supercapacitor backup circuitry while guaranteeing sub-100ns write latency and >10¹⁵ endurance-no data loss during unexpected shutdowns. |
Use Scenario: Printer firmware stores job queue metadata, toner usage counters, and calibration profiles across power cycles. IC Role / Device Role / Timing Role: Persistent configuration store accessed via SPI from main SoC during boot and job processing. Use Value: Enables zero-latency resume after sleep mode and prevents counter corruption during brown-out-no EEPROM wear-out concerns. |
| Industrial Control And Monitoring | Medical Diagnostics |
Use Scenario: PLC module records sensor thresholds, alarm history, and user-defined logic parameters in harsh EMI environments. IC Role / Device Role / Timing Role: Deterministic, radiation-tolerant non-volatile memory for critical configuration and event logging. Use Value: Immune to bit flips from ambient radiation; retains data at 85°C for >20 years-meets IEC 61508 SIL-2 functional safety requirements. |
Use Scenario: Portable ultrasound device stores last-used imaging presets, patient ID templates, and calibration offsets. IC Role / Device Role / Timing Role: Fast-access persistent memory mapped directly into ARM Cortex-M4 address space via XIP. Use Value: Reduces boot time by 120ms versus NAND-based solutions and avoids complex FTL translation layers-improves clinical workflow responsiveness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial non-volatile memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress Semiconductors FM25V10-G | 1Mb density, 3.0V supply (2.7–3.6V), SOIC-8 only, no XIP or Augmented Storage Array | Limited to smaller code/data footprints; lacks per-section write protection and JEDEC Reset | Select when 1Mb capacity suffices and 3.0V rail simplifies BOM; avoid for 16Mb or 1.8V designs |
| Infineon Technologies CY14B108N-ZSP25XI | 8Mb density, 2.7–3.6V, SOIC-8, supports SPI/SDR only (no QPI or DDR), no Augmented Storage Array | Lower bandwidth (max 40MHz SDR), no hardware write protect pin, no unique ID | Choose for cost-sensitive 8Mb applications requiring basic MRAM persistence-but not for high-speed or secure identity use cases |
Compared with FM25V10-G and CY14B108N-ZSP25XI, the M10162040054X0IWAR offers 2× higher density, 1.8V operation, QPI/DDR interface, XIP, and secure augmented storage-making it optimal for next-generation industrial and medical edge devices demanding scalability, speed, and data integrity.
Availability
M10162040054X0IWAR is available at Aetrix Electronics and suitable for factory automation, multifunction printers, and industrial control systems requiring stable component supply, long-term lifecycle assurance, and guaranteed MRAM performance consistency across production batches.
Supply support for M10162040054X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The Mxxxx204 family was designed specifically to replace battery-backed SRAM and legacy EEPROM/Flash in mission-critical embedded systems-delivering true non-volatility with SRAM-like speed, infinite endurance, and simplified system-level power architecture.
FAQ
What is the maximum clock frequency supported by M10162040054X0IWAR in Double Data Rate mode?
The M10162040054X0IWAR supports 54MHz in Double Data Rate (DDR) mode, achieving an effective interface bandwidth of 216MB/s using quad I/O lines (4-4-4). This is confirmed in the "Features" section of the datasheet and validated across industrial temperature range (−40°C to +85°C) with 1.71–2.00V supply. The M10162040054X0IWAR does not support 108MHz DDR-only SDR at that rate.
Does M10162040054X0IWAR require external hardware for write protection, or is software-based protection sufficient?
The M10162040054X0IWAR supports both hardware and software write protection. Hardware protection uses the WP# pin in conjunction with the WP#EN bit in the Status Register; software protection uses TBSEL and BPSEL[2:0] bits to define protected memory blocks. For robust security, Renesas recommends enabling both-hardware lock prevents accidental writes during debug, while software settings enforce logical partitioning. The M10162040054X0IWAR's dual-layer scheme eliminates need for external lock circuits.
Can M10162040054X0IWAR retain data during deep power-down mode, and how long does exit take?
Yes, the M10162040054X0IWAR retains full memory and register contents-including configuration and Augmented Storage Array-in Deep Power Down mode. Exit time is specified as ≤400µs (tEXDPD) after CS# goes low, with no initialization sequence required. This behavior is guaranteed across −40°C to +85°C and enables rapid wake-up in energy-constrained applications like portable medical devices. The M10162040054X0IWAR maintains all settings post-exit without host reconfiguration.
Is the 256-byte Augmented Storage Array in M10162040054X0IWAR physically separate from main memory, and can it be write-protected per section?
Yes, the 256-byte Augmented Storage Array is architecturally isolated from the 16Mb main MRAM array and mapped to fixed addresses 000000h–0000FFh. It is divided into eight 32-byte sections (0–7), each individually programmable and write-protectable via dedicated bits in the Augmented Storage Array Protection Register. This allows secure storage of calibration data, firmware signatures, or device-specific keys without risking main memory corruption. The M10162040054X0IWAR supports per-section locking independent of main array protection schemes.
What JEDEC-standard commands does M10162040054X0IWAR support, and why is JEDEC Reset important?
The M10162040054X0IWAR supports JEDEC-standard Reset (66h) and Release from Deep Power Down (ABh) commands. JEDEC Reset returns the device to a known operational state-including clearing status flags and re-enabling instruction decoding-without requiring power cycle. This is essential for field-upgrade resilience and watchdog recovery in unattended systems. Unlike proprietary resets, JEDEC Reset ensures interoperability across toolchains and avoids vendor lock-in. The M10162040054X0IWAR implements this per JEDEC JESD254 specification.
M10162040054X0IWAR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 4M x 4
- Memory Interface:
- -
- Clock Frequency:
- 54 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.71V ~ 2V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
M10162040054X0IWAR FAQ
1.How can I place an order for M10162040054X0IWAR through Aetrix?
Please submit a Request for Quotation (RFQ) for M10162040054X0IWAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M10162040054X0IWAR reliable?
The price and inventory of M10162040054X0IWAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M10162040054X0IWAR is usually 5 days.
3.What payment methods are accepted for M10162040054X0IWAR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M10162040054X0IWAR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M10162040054X0IWAR?
M10162040054X0IWAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M10162040054X0IWAR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M10162040054X0IWAR?
For technical support, including M10162040054X0IWAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M10162040054X0IWAR requirements.
6.How does Aetrix verify that M10162040054X0IWAR is sourced from the original manufacturer or authorized distributors?
All M10162040054X0IWAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M10162040054X0IWAR meets industry standards.
7.What is the process for return or replacement of M10162040054X0IWAR?
All M10162040054X0IWAR units undergo pre-shipment inspection (PSI). If there is an issue with M10162040054X0IWAR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M10162040054X0IWAR part is unused and in its original packaging.
Return procedure for M10162040054X0IWAR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M10162040054X0IWAR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
