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Renesas M10162040054X0PSAY

Part No.:
M10162040054X0PSAY
Manufacturer:
Renesas
Category:
Memory
Package:
8-SOIC (0.209", 5.30mm Width)
Datasheet:
AetrixM10162040054X0PSAY.pdf
Description:
IC RAM 16MBIT 54MHZ 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,102

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Product details

Overview

M10162040054X0PSAY from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, industrial-plus temperature rating (−40°C to +105°C), and 8-pin SOIC package. It delivers SRAM-compatible read/write latency, zero write endurance limit, and data retention >20 years - deployed in real-time industrial control systems requiring deterministic, power-loss-safe data logging.

For engineers reviewing the M10162040054X0PSAY datasheet, M10162040054X0PSAY pinout, M10162040054X0PSAY application, or M10162040054X0PSAY equivalent, key selection criteria include its 1.71–2.0V/2.7–3.6V dual-voltage support, hardware/software write protection, 256-byte augmented storage array, and JEDEC Reset compliance - all critical for high-reliability embedded firmware and configuration storage.

Technical Context

The M10162040054X0PSAY implements a 40nm pMTJ spin-transfer torque MRAM core with quad SPI (QPI) interface supporting 1-4-4 command-address-data nomenclature. Its architecture enables eXecute-In-Place (XIP) mode to eliminate per-access command overhead, reducing random read latency versus legacy serial NOR Flash.

It integrates dual power domains (1.8V and 3.0V compatible), on-die voltage regulation, and two low-power states - Deep Power Down (IDPD ≤ 2 µA) and Hibernate (IHBN ≤ 10 µA) - both preserving full register state and memory contents without external backup power.

Key Specifications

ParameterValue and Actual Design Meaning
Density16 Mbit (2 MByte) main memory array with linear 24-bit addressing (0x000000–0x1FFFFF)
InterfaceQuad SPI (QPI) 4-4-4 mode; supports DDR at 54 MHz (108 Mbps effective throughput)
Voltage Range1.71–2.00 V or 2.70–3.60 V - dual-rail compatibility enables direct replacement of 1.8V/3.3V serial Flash/NOR
Operating Temp−40°C to +105°C (Industrial Plus grade) - qualified for under-hood automotive and factory-floor environments
EnduranceVirtually unlimited (>10¹⁵ cycles) - eliminates wear-leveling firmware and write-cycle management overhead
Data Retention>20 years at +105°C - guaranteed non-volatility without refresh or backup power
Augmented Storage256-byte user-programmable array, partitioned into eight 32-byte sections with individual write protection

Pinout & Package

Package: 8-pin SOIC (5.2 mm × 5.2 mm), RoHS-compliant, surface-mount, industrial-plus rated.

Pin/TerminalCircuit RoleDesign Meaning
CS#Chip SelectActive-low enable; falling edge initiates instruction sequence; high = standby (tri-state I/Os, ISB current)
WP# / IO[2]Write Protect / Bidirectional Data 2Hardware lock for status register when WP# = low + SR[7]=1; also serves as QPI data lane IO[2]
SI / IO[0]Serial Input / Bidirectional Data 0Command/address input in SDR; bidirectional in DPI/QPI modes; no internal pull-up
CLKClock InputSynchronous timing source; DDR uses both edges; supports SPI Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1)
IO[3]Bidirectional Data 3QPI data lane; tied to VCC if unused in single/dual SPI configurations
SO / IO[1]Serial Output / Bidirectional Data 1Data output begins on falling clock edge in all modes; tri-stated when CS# = high
VCCPower SupplySingle supply for core and I/O; accepts 1.71–2.00 V or 2.70–3.60 V; requires local decoupling
VSSGroundCommon reference for core and I/O; must be low-impedance connection

Key Features

FeatureDesign Value
eXecute-In-Place (XIP)Enables continuous burst reads without repeated command issuance - reduces average random access time by ≥30% vs standard SPI flash
Hardware + Software ProtectionWP# pin + configurable block protect bits (BPSEL[2:0]) and top/bottom select (TBSEL) - prevents accidental writes to firmware or calibration data
JEDEC Reset SupportStandardized reset command (66h) restores device to known state - simplifies system recovery after brown-out or watchdog timeout
Unique & Programmable IDs64-bit factory-unique ID + 64-bit user-writable serial number - enables secure device authentication and traceability in production
Deep Power Down ModeEnters sub-2 µA quiescent current state in <3 µs; exits in <400 µs with full register and memory state preserved

Applications

Factory AutomationMedical Diagnostics

Use Scenario: PLCs and motion controllers logging sensor timestamps, recipe parameters, and fault history across power cycles.

IC Role / Device Role / Timing Role: Non-volatile configuration and event log storage with microsecond write latency and zero endurance degradation.

Use Value: Eliminates battery-backed SRAM and complex wear-leveling algorithms - reduces BOM cost and firmware maintenance.

Use Scenario: Portable ultrasound and ECG devices storing calibration coefficients, patient session metadata, and last-known operational state.

IC Role / Device Role / Timing Role: Persistent storage for safety-critical settings that must survive sudden power loss during imaging acquisition.

Use Value: Guarantees data integrity without capacitive hold-up or supercapacitor backup - meets IEC 62304 Class C software requirements.

Industrial RoutersMultifunction Printers

Use Scenario: Edge routers caching routing tables, TLS certificates, and firmware update staging in harsh network cabinets.

IC Role / Device Role / Timing Role: High-speed, byte-addressable configuration store enabling fast failover and secure boot verification.

Use Value: Supports cryptographic key storage with hardware write protection - prevents tampering during remote firmware updates.

Use Scenario: Print engines retaining toner level history, page count, and consumable usage logs across thousands of power cycles.

IC Role / Device Role / Timing Role: Endurance-critical data logger interfacing directly with MCU via QSPI at 54 MHz DDR.

Use Value: Withstands >10¹⁵ write cycles - outlasts printer mechanical lifetime without data corruption or field failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress Semiconductors FM25V16-G16Mb F-RAM; 40 MHz SPI max; 2.7–3.6 V only; no DDR mode; 10¹⁴ enduranceLimited to 3.3V systems; lower bandwidth; no XIP or augmented storage arrayChoose for legacy 3.3V designs where DDR and dual-voltage operation are unnecessary
Infineon Technologies CY14V108N-ZSP25XI8Mb nvSRAM with parallel interface; 25 ns access; 3.3 V only; requires external capacitor for store operationParallel bus footprint; higher pin count; capacitor-dependent non-volatility; no QSPI compatibilityChoose only when existing PCB layout mandates parallel interface and deterministic nanosecond access is required

Compared with FM25V16-G and CY14V108N-ZSP25XI, the M10162040054X0PSAY uniquely combines QSPI DDR speed, dual-voltage operation, on-chip augmented storage, and true infinite endurance - making it the only drop-in upgrade path for 1.8V/3.3V serial Flash in industrial-plus temperature applications.

Availability

M10162040054X0PSAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial networking requiring stable component supply across extended temperature and long product lifecycles.

Supply support for M10162040054X0PSAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family was designed specifically to replace serial NOR Flash and battery-backed SRAM in mission-critical embedded systems - delivering persistent, high-speed, radiation-tolerant memory with zero write latency penalty.

FAQ

What is the maximum clock frequency supported by M10162040054X0PSAY in Double Data Rate mode?

The M10162040054X0PSAY supports up to 54 MHz in Double Data Rate (DDR) mode, achieving an effective data rate of 108 Mbps. This is confirmed in the "Features" section of the datasheet and applies specifically to the "0054" performance grade denoted in the part number. The device does not support DDR above 54 MHz - attempting higher frequencies violates timing specifications and may cause data corruption.

Does M10162040054X0PSAY require external hardware for non-volatility, such as a backup capacitor or battery?

No, the M10162040054X0PSAY is inherently non-volatile due to its STT-MRAM technology and requires no external energy storage. Unlike nvSRAM or FRAM, it retains data indefinitely after power removal without capacitors, batteries, or supercapacitors. This eliminates associated bill-of-materials cost, board space, and reliability concerns related to backup power components.

Can M10162040054X0PSAY be used as a direct replacement for standard SPI NOR Flash in existing designs?

Yes - the M10162040054X0PSAY uses industry-standard SPI commands (including Read, Write Enable, Write Status Register, and JEDEC Reset), shares identical 8-pin SOIC pinout and timing envelopes, and supports the same 1-1-1, 1-1-4, and 4-4-4 protocols. Firmware changes are minimal: only DDR enable/disable and optional XIP activation are needed to unlock full performance.

What is the purpose and size of the Augmented Storage Array in M10162040054X0PSAY?

The M10162040054X0PSAY includes a dedicated 256-byte Augmented Storage Array, partitioned into eight 32-byte programmable sections. Each section can be individually write-protected via configuration registers. It is intended for storing infrequently modified but safety-critical data - such as calibration constants, device serial numbers, or cryptographic keys - isolated from the main memory array to prevent accidental overwrite.

Is M10162040054X0PSAY qualified for automotive applications?

The M10162040054X0PSAY is specified for Industrial Plus temperature range (−40°C to +105°C) and is commonly deployed in under-hood and chassis-mounted industrial control units. However, it is not AEC-Q100 qualified. For automotive safety-critical applications requiring formal qualification, consult Renesas' automotive-grade MRAM portfolio - the M10162040054X0PSAY is intended for industrial and medical systems with equivalent thermal and reliability demands.

M10162040054X0PSAY Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.209", 5.30mm Width)
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
RAM
Technology:
MRAM (Magnetoresistive RAM)
Memory Size:
16Mbit
Memory Organization:
4M x 4
Memory Interface:
-
Clock Frequency:
54 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.71V ~ 2V
Operating Temperature:
-40°C ~ 105°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

M10162040054X0PSAY FAQ

1.How can I place an order for M10162040054X0PSAY through Aetrix?

Please submit a Request for Quotation (RFQ) for M10162040054X0PSAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M10162040054X0PSAY reliable?

The price and inventory of M10162040054X0PSAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M10162040054X0PSAY is usually 5 days.

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M10162040054X0PSAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M10162040054X0PSAY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M10162040054X0PSAY?

For technical support, including M10162040054X0PSAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M10162040054X0PSAY requirements.

6.How does Aetrix verify that M10162040054X0PSAY is sourced from the original manufacturer or authorized distributors?

All M10162040054X0PSAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M10162040054X0PSAY meets industry standards.

7.What is the process for return or replacement of M10162040054X0PSAY?

All M10162040054X0PSAY units undergo pre-shipment inspection (PSI). If there is an issue with M10162040054X0PSAY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M10162040054X0PSAY part is unused and in its original packaging.

Return procedure for M10162040054X0PSAY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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