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Renesas M10162040054X0PWAR

Part No.:
M10162040054X0PWAR
Manufacturer:
Renesas
Category:
Memory
Package:
8-VDFN Exposed Pad
Datasheet:
AetrixM10162040054X0PWAR.pdf
Description:
IC RAM 16MBIT SPI 54MHZ 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,297

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Product details

Overview

M10162040054X0PWAR from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with Quad SPI (4-4-4) interface, 54MHz DDR clock support, 1.71–2.0V or 2.7–3.6V dual supply range, and industrial-plus temperature rating (−40°C to +105°C). It delivers SRAM-compatible read/write timing with persistent data retention, targeting real-time data logging in factory automation controllers.

For engineers reviewing the M10162040054X0PWAR datasheet, M10162040054X0PWAR pinout, M10162040054X0PWAR application, or M10162040054X0PWAR equivalent, key selection criteria include its 16Mbit density, QSPI DDR mode compatibility, hardware/software write protection, 256-byte augmented storage array, and WSON-8 package footprint for space-constrained industrial PCBs.

Technical Context

The M10162040054X0PWAR implements a 40nm pMTJ spin-transfer torque MRAM core with true random-access capability-enabling byte-level reads/writes without erase cycles. Its architecture supports Execute-In-Place (XIP), reducing command overhead for sequential instruction execution.

It operates in four SPI modes (1-1-1, 1-4-4, 4-4-4, etc.) with configurable clock polarity/phase (SPI Mode 0 or 3), and integrates dual low-power states: Deep Power Down (IDPD ≤ 10 µA) and Hibernate (IHBN ≤ 20 µA), both preserving memory contents and register configuration.

Key Specifications

ParameterValue and Actual Design Meaning
Density16 Mbit (2 MByte) main memory array - supports firmware storage and runtime data buffering without wear leveling.
InterfaceQuad SPI (4-4-4) with DDR support at 54 MHz - enables 432 Mbps peak throughput using both clock edges.
Supply Voltage1.71–2.00 V or 2.70–3.60 V - dual-rail compatibility simplifies integration into 1.8V or 3.3V industrial systems.
Operating Temp−40°C to +105°C - qualified for extended-temperature industrial control and medical diagnostics environments.
EnduranceVirtually unlimited (>10¹⁵ cycles) - eliminates write-cycle limitations inherent in Flash/EEPROM.
Data Retention20+ years at 105°C - ensures long-term data integrity in unpowered storage applications.
Package8-pad DFN (WSON), 5.0 × 6.0 mm - surface-mount footprint compatible with standard SOIC-8 reflow profiles.

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm, 0.5 mm pitch, exposed thermal pad (not electrically connected).

Pin/TerminalCircuit RoleDesign Meaning
CS#Chip Select InputActive-low enable; falling edge initiates instruction sequence; high state forces standby mode with tri-stated outputs.
WP# / IO[2]Bidirectional I/O / Write ProtectIn SPI mode: hardware write protect for status register when pulled low; in QPI/DPI modes: bidirectional data line IO[2].
SI / IO[0]Input / Bidirectional Data 0In SPI: serial input only; in DPI/QPI: bidirectional data lane 0 - supports full-duplex communication in multi-I/O modes.
CLKClock InputSynchronous timing reference; rising/falling edges used per SDR/DDR mode - determines data latch points per Table 4.
IO[3]Bidirectional Data 3QPI/DPI mode only - completes 4-lane data bus; must be tied high if unused in SPI mode.
SO / IO[1]Output / Bidirectional Data 1In SPI: serial output only (data valid on falling edge); in DPI/QPI: bidirectional data lane 1.
VCCPower SupplyCore and I/O supply - requires local 100 nF decoupling; supports two voltage ranges (1.8V or 3.3V).
VSSGroundCommon return path for core and I/O - must be low-impedance connection to minimize noise coupling.

Key Features

FeatureDesign Value
STT-MRAM Technology40 nm pMTJ cell enables zero-write-latency, infinite endurance, and 20+ year data retention at 105°C.
Augmented Storage Array256-byte user-programmable section with per-section write protection - ideal for storing calibration constants or device IDs.
Hardware + Software ProtectionWP# pin + configurable Status Register bits (BPSEL[2:0], TBSEL) allow granular block-level memory locking.
JEDEC Reset SupportStandard reset command (66h) restores default register states - simplifies system recovery after brownout or power loss.
Low-Power ModesDeep Power Down (≤10 µA) and Hibernate (≤20 µA) retain full memory and config state - critical for battery-backed systems.

Applications

Factory AutomationMedical Diagnostics

Use Scenario: Real-time logging of sensor readings and PLC event timestamps during machine operation.

IC Role / Device Role / Timing Role: Non-volatile buffer for burst-mode data capture with sub-100 ns write latency and no erase delay.

Use Value: Eliminates Flash wear-out risk and guarantees deterministic write timing across 10+ year equipment lifecycles.

Use Scenario: Storing patient calibration profiles and diagnostic result history in portable ultrasound units.

IC Role / Device Role / Timing Role: Secure, tamper-resistant storage for regulatory-compliant audit trails with hardware write protection.

Use Value: Meets IEC 62304 Class C software requirements via guaranteed 20-year data retention at 105°C ambient.

Industrial ControlData Routers

Use Scenario: Firmware update staging and rollback image storage in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: XIP-capable memory enabling direct code execution from MRAM - reduces boot time vs. Flash + RAM copy.

Use Value: Enables atomic firmware updates with zero downtime and no external RAM dependency.

Use Scenario: Packet metadata caching and flow-table persistence in carrier-grade Ethernet switches.

IC Role / Device Role / Timing Role: High-speed, low-latency non-volatile cache supporting 10 Gbps packet inspection pipelines.

Use Value: Delivers 432 Mbps QSPI DDR throughput with consistent <1 µs access - outperforming serial NOR in burst-read scenarios.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress Semiconductors FM25V20A-G2 Mbit F-RAM, 40 MHz SPI, 2.0–3.6 V, SOIC-8 - lower density, no DDR mode, faster write but limited to 10¹⁴ cycles.Best for ultra-high-write-count metering logs where 2 Mbit suffices and 10¹⁴ endurance is acceptable.Select FM25V20A-G only if design requires sub-150 ns write latency and avoids MRAM's higher cost premium.
Winbond W25Q16JW-QAAIE16 Mbit serial NOR Flash, 133 MHz Quad SPI, 1.7–2.0 V, WSON-8 - requires sector erase, 100k cycle endurance, 20-year retention at 85°C only.Suitable for code storage where XIP is needed but write infrequency allows erase management.Choose W25Q16JW-QAAIE only if BOM cost sensitivity outweighs need for true random writes and extended-temp reliability.

Compared with FM25V20A-G and W25Q16JW-QAAIE, the M10162040054X0PWAR uniquely combines 16 Mbit density, DDR-enabled throughput, industrial-plus temperature rating, and infinite endurance - making it the sole option for mission-critical, high-write industrial firmware and data buffers requiring zero maintenance over 15+ years.

Availability

M10162040054X0PWAR is available at Aetrix Electronics and suitable for factory automation controllers, medical diagnostics instruments, and industrial routers requiring stable component supply with guaranteed long-term availability and traceable sourcing.

Supply support for M10162040054X0PWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The Mxxxx204 family is designed as Persistent SRAM (P-SRAM) replacements - delivering SRAM-like performance with non-volatile reliability for real-time industrial and medical systems where data integrity and uptime are non-negotiable.

FAQ

What is the maximum operating frequency of the M10162040054X0PWAR in Double Data Rate mode?

The M10162040054X0PWAR supports up to 54 MHz in Double Data Rate (DDR) mode, achieving 432 Mbps peak data throughput using both clock edges. This is confirmed in the "Features" section of the datasheet under "Interface" specifications and validated in Table 4 for DDR instruction timing. The M10162040054X0PWAR does not support 108 MHz DDR - that speed is reserved for the 0108 suffix variants.

Does the M10162040054X0PWAR require an external voltage regulator for its 1.8V supply rail?

No, the M10162040054X0PWAR operates directly from a 1.71–2.00 V supply and does not require an external regulator if the host system provides a stable, well-decoupled 1.8V rail. The datasheet specifies 100 nF ceramic decoupling capacitance near the VCC pin, and no internal LDO or regulator circuitry is present - confirming direct connection to a clean 1.8V source is sufficient for proper M10162040054X0PWAR operation.

How is write protection implemented on the M10162040054X0PWAR, and can it be disabled?

The M10162040054X0PWAR implements dual-layer write protection: hardware-based via the WP# pin (enabled by SR[7] bit), and software-based via Status Register BPSEL[2:0] and TBSEL bits. Protection can be fully disabled by clearing SR[7] (WP#EN = 0) and setting BPSEL[2:0] = 000, allowing unrestricted writes to memory and registers. All protection settings are volatile unless locked via the Augmented Storage Array protection register.

What is the purpose of the 256-byte Augmented Storage Array in the M10162040054X0PWAR?

The 256-byte Augmented Storage Array in the M10162040054X0PWAR is a dedicated, user-programmable region divided into eight 32-byte sections, each independently readable, writable, and write-protectable. It is intended for storing calibration data, device-specific identifiers, or security keys - separate from the main memory array - and retains full functionality even when main array protection is enabled. This feature is explicitly defined in Section 9 and Table 9 of the M10162040054X0PWAR datasheet.

Is the M10162040054X0PWAR pin-compatible with other devices in the Mxxxx204 family?

Yes, the M10162040054X0PWAR shares identical pinout, package dimensions, and signal assignments with all Mxxxx204 variants in the same package type (e.g., WA = WSON-8), including M10042040054X0PWAR and M10082040054X0PWAR. Pin compatibility is confirmed in Figures 3 and 4 (Page 9) and Table 2 (Page 7) of the datasheet, which define uniform CS#, CLK, IO[0–3], VCC, and VSS mapping across the entire M-series family.

M10162040054X0PWAR Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-VDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
RAM
Technology:
MRAM (Magnetoresistive RAM)
Memory Size:
16Mbit
Memory Organization:
4M x 4
Memory Interface:
SPI
Clock Frequency:
54 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.71V ~ 2V
Operating Temperature:
-40°C ~ 105°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

M10162040054X0PWAR FAQ

1.How can I place an order for M10162040054X0PWAR through Aetrix?

Please submit a Request for Quotation (RFQ) for M10162040054X0PWAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M10162040054X0PWAR reliable?

The price and inventory of M10162040054X0PWAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M10162040054X0PWAR is usually 5 days.

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4.How is shipping managed for M10162040054X0PWAR?

M10162040054X0PWAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M10162040054X0PWAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M10162040054X0PWAR?

For technical support, including M10162040054X0PWAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M10162040054X0PWAR requirements.

6.How does Aetrix verify that M10162040054X0PWAR is sourced from the original manufacturer or authorized distributors?

All M10162040054X0PWAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M10162040054X0PWAR meets industry standards.

7.What is the process for return or replacement of M10162040054X0PWAR?

All M10162040054X0PWAR units undergo pre-shipment inspection (PSI). If there is an issue with M10162040054X0PWAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M10162040054X0PWAR part is unused and in its original packaging.

Return procedure for M10162040054X0PWAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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