Renesas M10162040054X0PWAY

Overview

M10162040054X0PWAY from Renesas is a 16Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 54MHz DDR timing, industrial-plus temperature rating (−40°C to +105°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible random read/write latency, zero write endurance limit, and persistent data retention without backup power - deployed in real-time industrial control logging and medical diagnostic data buffering.

For engineers reviewing the M10162040054X0PWAY datasheet, M10162040054X0PWAY pinout, M10162040054X0PWAY application, or M10162040054X0PWAY equivalent, key selection criteria include its 1.71–2.0V/2.7–3.6V dual-voltage support, hardware/software write protection, 256-byte augmented storage array, and JEDEC Reset compliance for deterministic initialization in safety-critical embedded systems.

Technical Context

This MRAM uses 40nm pMTJ spin-transfer torque technology to achieve true random-access non-volatility with no wear-out mechanism. Its QSPI interface supports x4 I/O (1-4-4) configuration and both SDR and DDR modes - with DDR enabling 54MHz effective clock rate via double-edge sampling on CLK.

The device integrates dedicated registers for status, configuration, unique ID, and user-programmable serial number, plus an independent 256-byte augmented storage array segmented into eight 32-byte protected sections. Power management includes Deep Power Down (3µs entry, 400µs exit) and Hibernate modes that preserve register state and memory contents.

Key Specifications

Pinout & Package

8-pad DFN (WSON) package: 5.0mm × 6.0mm body, 0.5mm pitch, exposed thermal pad (not electrically connected). RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with FM25V16-G and CY14B116N-ZSP25XI, M10162040054X0PWAY offers superior bandwidth via DDR QSPI, eliminates backup power dependencies, and provides finer-grained data protection through its augmented storage array - making it optimal for new designs targeting compact, high-reliability industrial and automotive endpoints.

Availability

M10162040054X0PWAY is available at Aetrix Electronics and suitable for factory automation logging, medical diagnostic buffering, and automotive ADAS event recording requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for M10162040054X0PWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

M10162040054X0PWAY belongs to Renesas' Persistent SRAM (P-SRAM) family - engineered to replace battery-backed SRAM and legacy serial flash in applications demanding instant-write non-volatility, high endurance, and deterministic timing behavior.

FAQ

What voltage ranges does M10162040054X0PWAY support?

M10162040054X0PWAY supports two independent operating voltage ranges: 1.71V to 2.00V and 2.70V to 3.60V. This dual-voltage capability allows direct integration into both 1.8V logic domains and 3.3V industrial buses without level shifters. The device automatically adapts to the applied VCC level, and both ranges are fully qualified across the −40°C to +105°C temperature span. M10162040054X0PWAY does not support intermediate voltages like 2.5V.

Does M10162040054X0PWAY require a battery or capacitor for data retention?

No, M10162040054X0PWAY is inherently non-volatile due to its STT-MRAM technology and requires no backup power source. Data persists indefinitely at temperatures up to +105°C without degradation, eliminating the reliability risks and maintenance overhead associated with battery-backed SRAM or capacitor-holdup circuits. M10162040054X0PWAY retains all stored content - including main memory, augmented storage, and configuration registers - immediately after power removal.

How is write protection implemented on M10162040054X0PWAY?

M10162040054X0PWAY implements dual-layer write protection: hardware-based via the WP# pin (active-low, functional only in SDR mode), and software-based via configuration bits in the Status Register controlling top/bottom block protection and serial number lock. The WP# pin must be driven - it has no internal pull-up - and ties directly to the status register's WP#EN bit. M10162040054X0PWAY also supports individual 32-byte section locking within its 256-byte augmented storage array.

What is the purpose of the augmented storage array in M10162040054X0PWAY?

The augmented storage array is a dedicated 256-byte memory region separate from the main 16Mb array, organized into eight 32-byte programmable and independently write-protectable sections. It is designed for storing critical, infrequently updated data such as calibration coefficients, device-specific security keys, or manufacturing traceability codes. M10162040054X0PWAY allows selective write-locking of each section after programming, preventing accidental overwrites while leaving the main array fully available for dynamic data logging.

Is M10162040054X0PWAY pin-compatible with other devices in the Mxxxx204 family?

Yes, M10162040054X0PWAY shares identical pinout, package dimensions, and electrical interface with all Mxxxx204 variants - including M1004204 and M1008204 in both DFN and SOIC packages. All members use the same 8-pin assignment (CS#, WP#/IO[2], SI/IO[0], CLK, IO[3], SO/IO[1], VCC, VSS) and support identical instruction sets and register maps. M10162040054X0PWAY differs only in density (16Mb), clock speed (54MHz DDR), and temperature grade (Industrial Plus), enabling drop-in upgrades within the same footprint.