Renesas M10162040108X0ISAR

Overview

M10162040108X0ISAR from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock speed, 1.71–2.0V supply voltage, and industrial temperature range (−40°C to +85°C). It delivers SRAM-compatible read/write timing, zero write latency, and persistent data retention-ideal for real-time data logging in factory automation controllers.

For engineers reviewing the M10162040108X0ISAR datasheet, M10162040108X0ISAR pinout, M10162040108X0ISAR application, or M10162040108X0ISAR equivalent, key selection criteria include its 16Mbit density, 8-pad DFN (WSON) package, hardware/software write protection, 256-byte augmented storage array, and JEDEC Reset support.

Technical Context

The M10162040108X0ISAR implements a 40nm pMTJ spin-transfer torque MRAM array with Quad SPI (4-4-4) interface supporting both SDR (108MHz) and DDR (54MHz) modes. Its architecture includes dedicated command/address/data paths, eXecute-In-Place (XIP) capability, and dual power domains enabling Deep Power Down (3µs entry) and Hibernate (3µs entry) states without data loss.

It integrates hardware-based write protection via WP# pin and software-configurable block protection (Top/Bottom, BP[2:0]) through Status and Configuration Registers. The 256-byte Augmented Storage Array is partitioned into eight 32-byte sections, each independently programmable and protectable-enabling secure storage of calibration data or firmware metadata.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0mm × 6.0mm, moisture sensitivity level (MSL) 3, lead-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V16-G and CY14B116N-ZSP25XI, the M10162040108X0ISAR provides higher bandwidth (108MHz vs ≤40MHz), broader voltage support (1.71–2.0V), and true serial QSPI compatibility - making it optimal for new low-power, high-throughput embedded systems where pin count and layout simplicity are critical.

Availability

M10162040108X0ISAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial networking requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for M10162040108X0ISAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M10162040108X0ISAR belongs to Renesas' Persistent SRAM (P-SRAM) family, engineered to replace battery-backed SRAM and legacy Flash/EEPROM in mission-critical industrial systems demanding instant-write non-volatility and 20+ year data retention.

FAQ

What is the operating voltage range specified for the M10162040108X0ISAR?

The M10162040108X0ISAR operates from 1.71V to 2.00V. This narrow 1.8V nominal range ensures compatibility with advanced low-power microcontrollers and reduces system-level power consumption. Operation outside this range is not guaranteed, and the device will not function below 1.71V or above 2.00V per the datasheet's absolute maximum ratings. The M10162040108X0ISAR does not support 3.0V operation - that variant is designated with suffix '3' (e.g., M10162040108X0IS3R).

Does the M10162040108X0ISAR support Quad SPI (QPI) mode, and what are the requirements?

Yes, the M10162040108X0ISAR supports full Quad SPI (4-4-4) mode using all four I/O pins (IO[0]–IO[3]). To enter QPI mode, the device must receive the Enable QPI instruction (38h), after which all subsequent commands use the 4-line bus. The M10162040108X0ISAR requires proper initialization including status register configuration and clock polarity/phase alignment (CPOL=0, CPHA=0 for SDR). All QPI timing parameters-including tEDPD and tEXDPD-are validated per the datasheet.

How is write protection implemented on the M10162040108X0ISAR?

The M10162040108X0ISAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables status register writes when enabled) and software-based via Status Register bits (TBSEL, BPSEL[2:0]) for top/bottom and block-level memory array protection. The 256-byte Augmented Storage Array also supports per-section write lock. All protection mechanisms are active simultaneously and must be explicitly disabled before modifying protected regions - the M10162040108X0ISAR enforces strict hierarchical locking.

What is the purpose and structure of the Augmented Storage Array in the M10162040108X0ISAR?

The M10162040108X0ISAR includes a dedicated 256-byte Augmented Storage Array mapped to addresses 0x000000–0x0000FF, divided into eight 32-byte sections. Each section can be individually programmed and write-protected via configuration registers. This area is electrically isolated from the main 16Mbit array and intended for storing immutable or infrequently updated data such as calibration constants, device serial numbers, or firmware signatures - the M10162040108X0ISAR guarantees independent endurance and retention for this region.

Is the M10162040108X0ISAR compatible with standard SPI memory controllers?

Yes, the M10162040108X0ISAR is fully compatible with industry-standard SPI controllers supporting Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1). It responds to standard instructions including Read Status Register (05h), Write Enable (06h), Page Program (02h), and Read Data (03h). The M10162040108X0ISAR also supports JEDEC-standard Reset (66h) and Deep Power Down (B9h), ensuring seamless integration into existing SPI memory firmware stacks without custom driver development.