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Renesas M10162040108X0IWAR

Part No.:
M10162040108X0IWAR
Manufacturer:
Renesas
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixM10162040108X0IWAR.pdf
Description:
IC RAM 16MBIT 108MHZ 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,492

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Product details

Overview

M10162040108X0IWAR from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock speed, 1.71–2.0V supply voltage, and industrial temperature range (−40°C to +85°C). It delivers SRAM-compatible read/write timing, zero write latency, and persistent data retention without backup power-used in real-time industrial control logging and firmware storage.

For engineers reviewing the M10162040108X0IWAR datasheet, M10162040108X0IWAR pinout, M10162040108X0IWAR application, or M10162040108X0IWAR equivalent, key selection criteria include QSPI x4 interface compatibility, 108MHz SDR timing compliance, WSON-8 package footprint, hardware/software write protection, and 16Mbit density for deterministic boot code storage.

Technical Context

The M10162040108X0IWAR implements a 40nm pMTJ spin-transfer torque MRAM array with quad SPI (QPI) command-address-data (4-4-4) support and Execute-In-Place (XIP) capability. Its architecture enables single-cycle random reads/writes without erase cycles, eliminating write latency penalties inherent in Flash.

It integrates dual protection mechanisms: hardware write protect via WP# pin and software-configurable block protection through Status and Configuration Registers. The device supports Deep Power Down (3µs entry, 400µs exit) and Hibernate modes while retaining full configuration state and memory contents.

Key Specifications

ParameterValue and Actual Design Meaning
Density16 Mbit (2 MByte) main memory array - sufficient for full firmware images or real-time data buffers in edge controllers
InterfaceQuad SPI (QPI) 4-4-4 mode - enables 432 MB/s peak throughput at 108 MHz SDR, matching high-speed microcontroller bus requirements
Supply Voltage1.71 V – 2.00 V - compatible with modern low-voltage SoCs and eliminates need for level-shifting in 1.8V systems
Operating Temp−40°C to +85°C - certified for industrial automation environments including PLC backplanes and motor drives
EnduranceVirtually unlimited (>10¹⁵ cycles) - eliminates wear-leveling firmware overhead and guarantees lifetime data integrity
Data Retention20+ years at 85°C - ensures unpowered data persistence across equipment maintenance cycles and field deployments
Package8-pad DFN (WSON), 5.0 mm × 6.0 mm - surface-mount compatible with automated assembly and thermal performance validated per JEDEC JESD51-2

Pinout & Package

8-pad DFN (WSON) package, 5.0 mm × 6.0 mm body, 0.5 mm pitch, exposed thermal pad (EP), RoHS-compliant matte tin finish.

Pin/TerminalCircuit RoleDesign Meaning
CS#Chip Select InputActive-low enable signal; falling edge initiates instruction latch; must be held stable during power-up per tPU = 250 µs requirement
WP# / IO[2]Bidirectional I/O / Hardware Write ProtectIn SPI mode: input-only write protect; in QPI mode: bidirectional data line; requires external pull-up if unused
SI / IO[0]Serial Input / Bidirectional Data 0Command/address/data input in SDR; primary I/O in 1-1-1/1-1-4 modes; latched on rising CLK edge
CLKClock InputSynchronous timing reference; supports SPI Mode 0 (CPOL=0, CPHA=0); 108 MHz max frequency in SDR
IO[3]Bidirectional Data 3QPI data lane; used for address/data in 4-4-4 mode; must be tied to VCC if not used in lower-pin-count configurations
SO / IO[1]Serial Output / Bidirectional Data 1Data output in SDR begins on falling CLK edge; bidirectional in QPI; high-impedance when CS# high
VCCPower Supply1.71–2.00 V core/I/O rail; requires local 100 nF ceramic decoupling per datasheet layout guidelines
VSSGroundCommon reference for all signals; connected to exposed thermal pad for thermal and EMI performance

Key Features

FeatureDesign Value
SRAM-compatible timingNo erase cycles or write latency; random read/write access time ≤ 8 ns - enables direct replacement of PSRAM in boot memory subsystems
Hardware + software write protectionWP# pin + Status Register BPSEL bits allow hierarchical locking of top/bottom memory blocks - prevents accidental firmware corruption during field updates
256-byte Augmented Storage ArrayUser-programmable, section-wise write-protectable space for calibration data or secure keys - independent of main array and retained across power cycles
JEDEC Reset supportStandard reset command (66h) restores default register states - simplifies system initialization and avoids post-reflow reprogramming
Deep Power Down modeReduces ICC to <1 µA while preserving memory and register contents - extends battery life in always-on industrial sensors

Applications

Factory AutomationMultifunction Printers

Use Scenario: Real-time logging of motion controller position errors and fault timestamps across multi-axis CNC machines.

IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing timestamped diagnostics with zero write latency and guaranteed retention after unexpected power loss.

Use Value: Eliminates reliance on supercapacitors or batteries for data persistence, reducing BOM cost and improving long-term reliability in harsh factory environments.

Use Scenario: Storing printer firmware, font libraries, and job queue metadata across power cycles in enterprise-grade multifunction devices.

IC Role / Device Role / Timing Role: Boot memory and configuration store interfaced directly to ARM Cortex-A53 application processor via QSPI bus.

Use Value: Enables instant-on operation and deterministic boot sequence due to no erase-before-write delay - critical for meeting sub-5-second wake-from-standby SLAs.

Industrial Control And MonitoringMedical Diagnostics

Use Scenario: Persistent storage of sensor calibration coefficients and historical trend data in programmable logic controllers (PLCs) deployed in oil & gas refineries.

IC Role / Device Role / Timing Role: High-reliability data logger with 20+ year retention at 85°C ambient - retains calibration integrity across equipment lifecycles without periodic recalibration.

Use Value: Reduces scheduled maintenance intervals and eliminates field service visits solely for memory refresh, lowering total cost of ownership.

Use Scenario: Secure storage of patient-specific imaging parameters and DICOM header metadata in portable ultrasound units.

IC Role / Device Role / Timing Role: Tamper-resistant configuration memory with hardware write protect (WP#) and section-level augmented array protection for HIPAA-compliant audit logs.

Use Value: Meets IEC 62304 Class C software safety requirements by guaranteeing immutable parameter storage even during brown-out conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress Semiconductors FM16W088 Mbit FRAM, 1.8V, 40 MHz SPI - lower density, slower interface, no QPI or XIP supportLimited to smaller firmware footprints; lacks deep power down and augmented storage arraySelect when legacy SPI-1-1-1 interface suffices and 8 Mbit capacity meets design constraints
Infineon Technologies CY14B108N8 Mbit nvSRAM, 3.3V, 100 MHz parallel interface - different bus architecture, higher voltage, larger SOIC-28 packageRequires PCB redesign for parallel bus routing and level translation; incompatible with QSPI-based host SoCsChoose only for drop-in replacement in existing parallel-memory designs where board rework is acceptable

Compared with FM16W08 and CY14B108N, the M10162040108X0IWAR provides double the density, 108 MHz QPI bandwidth, and WSON-8 footprint - enabling higher-performance, space-constrained industrial edge nodes without compromising data persistence or power efficiency.

Availability

M10162040108X0IWAR is available at Aetrix Electronics and suitable for industrial control and monitoring, medical diagnostics, and factory automation requiring stable component supply across extended product lifecycles.

Supply support for M10162040108X0IWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets.

The Mxxxx204 family is designed as Persistent SRAM (P-SRAM) replacements - targeting applications demanding true non-volatility, SRAM-like performance, and long-term data retention without battery backup or complex wear-leveling firmware.

FAQ

What is the maximum clock frequency supported by M10162040108X0IWAR in Single Data Rate mode?

The M10162040108X0IWAR supports up to 108 MHz in Single Data Rate (SDR) mode. This is specified in the ordering code "0108" and confirmed in the Features section of the datasheet. At this frequency, command, address, and data are latched on the rising edge of CLK for inputs and output on the falling edge - enabling deterministic timing for real-time microcontroller interfaces.

Does M10162040108X0IWAR require an external voltage regulator for its 1.8V supply?

No, the M10162040108X0IWAR operates directly from a 1.71 V to 2.00 V supply and does not require an external regulator if the system already provides a stable 1.8V rail. However, the datasheet mandates local 100 nF ceramic decoupling at the VCC pin to suppress switching noise and ensure reliable operation at 108 MHz.

Can M10162040108X0IWAR be used as a direct replacement for standard SPI NOR Flash in existing designs?

Yes, the M10162040108X0IWAR is pin-compatible with industry-standard 8-pin SOIC and WSON-8 SPI NOR Flash devices and supports identical instruction sets (e.g., Read, Write Enable, Page Program). However, it eliminates erase commands and offers faster random writes - requiring only minor firmware updates to remove erase routines and leverage its true byte-write capability.

How is write protection implemented on M10162040108X0IWAR?

M10162040108X0IWAR implements dual-layer write protection: hardware-based via the WP# pin (active-low, disables Status Register writes when enabled), and software-based via BPSEL bits in the Status Register that configure top/bottom block protection. Both mechanisms can be used simultaneously to safeguard critical firmware regions against accidental overwrites during field updates.

What is the purpose of the Augmented Storage Array in M10162040108X0IWAR?

The Augmented Storage Array is a dedicated 256-byte user-programmable memory region divided into eight 32-byte sections. Each section can be individually write-protected. It is intended for storing calibration data, security keys, or device-specific identifiers - isolated from the main 16 Mbit array to prevent corruption during bulk firmware updates and retained across all power states including Deep Power Down.

M10162040108X0IWAR Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
RAM
Technology:
MRAM (Magnetoresistive RAM)
Memory Size:
16Mbit
Memory Organization:
4M x 4
Memory Interface:
-
Clock Frequency:
108 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.71V ~ 2V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (5x6)

M10162040108X0IWAR FAQ

1.How can I place an order for M10162040108X0IWAR through Aetrix?

Please submit a Request for Quotation (RFQ) for M10162040108X0IWAR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for M10162040108X0IWAR reliable?

The price and inventory of M10162040108X0IWAR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M10162040108X0IWAR is usually 5 days.

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M10162040108X0IWAR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your M10162040108X0IWAR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for M10162040108X0IWAR?

For technical support, including M10162040108X0IWAR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M10162040108X0IWAR requirements.

6.How does Aetrix verify that M10162040108X0IWAR is sourced from the original manufacturer or authorized distributors?

All M10162040108X0IWAR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M10162040108X0IWAR meets industry standards.

7.What is the process for return or replacement of M10162040108X0IWAR?

All M10162040108X0IWAR units undergo pre-shipment inspection (PSI). If there is an issue with M10162040108X0IWAR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The M10162040108X0IWAR part is unused and in its original packaging.

Return procedure for M10162040108X0IWAR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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