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Renesas M10162040108X0IWAY
- Part No.:
- M10162040108X0IWAY
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
M10162040108X0IWAY.pdf
- Description:
- IC RAM 16MBIT 108MHZ 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,125
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Product details
Overview
M10162040108X0IWAY from Renesas is a 16Mb serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock speed, 1.71–2.0V supply voltage, industrial temperature range (−40°C to +85°C), and 8-pad DFN (WSON) package. It delivers SRAM-compatible read/write timing with persistent data retention for real-time data logging in factory automation controllers.
For engineers reviewing the M10162040108X0IWAY datasheet, M10162040108X0IWAY pinout, M10162040108X0IWAY application, or M10162040108X0IWAY equivalent, this page provides verified technical context, pin-level design meaning, JEDEC-compliant reset support, hardware/software write protection, and XIP-enabled low-latency execution for deterministic embedded storage.
Technical Context
The M10162040108X0IWAY implements a 40nm pMTJ spin-transfer torque MRAM array with quad SPI (4-4-4) interface supporting both SDR (108MHz) and DDR (54MHz) modes. Its architecture includes dedicated command/address/data I/O lanes, on-die high-voltage generator, and dual power states-Deep Power Down (tEXDPD ≤ 400µs) and Hibernate (tEXHIB ≤ 450µs)-with full configuration retention.
It integrates a 256-byte Augmented Storage Array segmented into eight 32-byte programmable/protectable sections, plus registers for status, configuration (four registers), device ID (64-bit read-only), and user serial number (64-bit read/write). All memory operations are controlled via an 8-bit instruction register with CS#-synchronized activation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 16Mbit (2MB) main array; supports 24-bit addressing up to 0x1FFFFF |
| Interface | QSPI (4-4-4) with SDR @ 108MHz - enables 432MB/s peak throughput |
| Supply Voltage | 1.71V–2.00V - compatible with 1.8V logic systems; eliminates level-shifting |
| Operating Temp | −40°C to +85°C - qualified for industrial control environments without derating |
| Endurance & Retention | Virtually unlimited write cycles (>10¹⁵) and >20-year data retention at 85°C |
| Package | 8-pad DFN (WSON), 5.0mm × 6.0mm - surface-mount compatible with SOIC footprint |
| Data Protection | Hardware WP# pin + software-configurable block protect (BPSEL[2:0]) and top/bottom select (TBSEL) |
Pinout & Package
8-pad DFN (WSON) package, 5.0mm × 6.0mm body, exposed thermal pad, RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: CS# | Chip Select Input | Active-low enable; falling edge initiates instruction latch; high = standby mode with tri-stated outputs |
| 2: WP# / IO[2] | Bidirectional Data 2 / Write Protect | In SPI mode: hardware write lock for status register when WP#=low and WP#EN=1; in QPI mode: data I/O lane |
| 3: SI / IO[0] | Serial Input / Data 0 | Command/address input in 1-1-1; bidirectional data lane in 1-2-2, 1-4-4, and 4-4-4 modes |
| 4: CLK | Clock Input | SDR: latches command/address on rising edge, outputs data on falling edge; DDR: uses both edges for address/data |
| 5: IO[3] | Bidirectional Data 3 | QPI data lane; must be tied to VCC if unused in single/dual SPI configurations |
| 6: SO / IO[1] | Serial Output / Data 1 | Unidirectional output in 1-1-1; bidirectional data lane in all multi-I/O modes; always outputs on falling clock edge |
| 7: VCC | Power Supply | 1.71–2.0V core/I/O rail; requires local 100nF decoupling per datasheet recommendation |
| 8: VSS | Ground | Common reference for core and I/O; connects to thermal pad for thermal dissipation |
Key Features
| Feature | Design Value |
|---|---|
| eXecute-In-Place (XIP) | Enables continuous read/write sequences without repeated command overhead; reduces random access latency by ≥30% vs standard SPI |
| Augmented Storage Array | 256-byte user-programmable space, partitioned into eight 32-byte sections, each independently write-protectable |
| JEDEC Reset Support | Standardized reset command (66h) restores default configuration without requiring power cycle or external reset signal |
| Dual Low-Power States | Deep Power Down (IDPD) and Hibernate (IHBN) both retain full configuration and memory contents; exit times ≤450µs |
| Unique Identification | 64-bit factory-programmed UID + 64-bit user-programmable serial number for traceability and secure boot binding |
Applications
| Factory Automation | Medical Diagnostics |
|---|---|
Use Scenario: Real-time motion control log buffering in PLCs during servo axis synchronization. IC Role / Device Role / Timing Role: Non-volatile scratchpad memory storing position timestamps and fault codes with sub-100ns write latency. Use Value: Eliminates battery-backed SRAM and avoids Flash wear-out; ensures deterministic 16Mb data capture across 100k+ power cycles. |
Use Scenario: Storing calibration coefficients and patient-specific settings in portable ultrasound units. IC Role / Device Role / Timing Role: Persistent configuration store accessed at boot and during runtime updates; retains data through battery swaps. Use Value: Guarantees >20-year retention at 40°C ambient; supports FDA-required audit trails via unique ID and serial number fields. |
| Industrial Routers | Multifunction Printers |
Use Scenario: Firmware patch storage and routing table snapshots in edge networking gateways. IC Role / Device Role / Timing Role: High-speed QSPI memory enabling XIP execution of critical packet-forwarding routines. Use Value: 108MHz SDR interface sustains 432MB/s burst reads; eliminates DRAM refresh overhead and Flash erase delays. |
Use Scenario: Job queue metadata and toner usage history in enterprise-grade MFPs with duty cycles >100k pages/month. IC Role / Device Role / Timing Role: Wear-resistant non-volatile buffer for print job headers, error logs, and consumables tracking. Use Value: Withstands >10¹⁵ write cycles - exceeds lifetime requirements by 10⁶× versus EEPROM; no firmware wear-leveling needed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar non-volatile serial memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress Semiconductors FM16W08 | 8Mb density, 3.3V only (2.7–3.6V), SOIC-8 package, no QPI or XIP support | Limited to lower-density, higher-voltage designs; lacks augmented storage and JEDEC reset | Select when 3.3V system integration and cost sensitivity outweigh performance and feature needs |
| Infineon Technologies CY14B108N | 8Mb density, 3.3V/2.5V operation, 100MHz max, SOIC-8, supports NVSRAM emulation but no MRAM endurance | Based on nvSRAM (SRAM + battery backup); requires external capacitor and has finite backup time | Choose only where legacy nvSRAM compatibility is mandatory and long-term maintenance access is guaranteed |
Compared with FM16W08 and CY14B108N, the M10162040108X0IWAY offers double the density, 1.8V operation, QPI bandwidth, XIP execution, and true infinite endurance - making it optimal for next-generation industrial edge devices requiring zero-maintenance persistent memory.
Availability
M10162040108X0IWAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial routers requiring stable component supply, long-lifecycle assurance, and RoHS/REACH compliance.
Supply support for M10162040108X0IWAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.
The Mxxxx204 family is designed as Persistent SRAM (P-SRAM) replacements - delivering MRAM's non-volatility and endurance while maintaining SPI compatibility and SRAM-like timing for seamless integration into legacy and new embedded systems.
FAQ
What is the operating voltage range for M10162040108X0IWAY?
The M10162040108X0IWAY operates exclusively within the 1.71V to 2.00V range, as specified in its ordering code "1" suffix and confirmed in Table 7 of the datasheet. It is not rated for 3.0V operation; using voltages outside this window risks functional failure or accelerated wear. This 1.8V-native design simplifies power delivery in modern low-power industrial systems.
Does M10162040108X0IWAY support Quad SPI (QPI) mode?
Yes, M10162040108X0IWAY fully supports Quad SPI (4-4-4) mode as defined in its feature list and block diagram. In QPI mode, IO[3:0] carry command, address, and data simultaneously, enabling maximum throughput. The device also supports all intermediate modes including 1-1-1, 1-4-4, and DPI - all configurable via instruction sequences per Tables 3 and 4.
How does the Augmented Storage Array function in M10162040108X0IWAY?
The M10162040108X0IWAY includes a dedicated 256-byte Augmented Storage Array mapped to addresses 0x000000–0x0000FF, divided into eight 32-byte sections. Each section can be individually programmed and write-protected via configuration bits. This area is independent of the main 16Mb array and is used for calibration data, security keys, or field-upgradable parameters without affecting primary memory.
What power-down modes does M10162040108X0IWAY offer, and how do they differ?
M10162040108X0IWAY supports two low-power states: Deep Power Down (EDP command B9h) and Hibernate (EHBN command BAh). Both retain full memory and register contents, but Deep Power Down achieves lower current (IDPD) and requires longer exit time (tEXDPD ≤ 400µs), while Hibernate offers faster wake-up (tEXHIB ≤ 450µs) and slightly higher current. Neither requires reinitialization upon exit.
Is M10162040108X0IWAY pin-compatible with other devices in the Mxxxx204 family?
Yes, all Mxxxx204 variants - including M1004204, M1008204, and M1016204 - share identical 8-pad DFN (WSON) and 8-pin SOIC pinouts, signal assignments, and electrical characteristics. The M10162040108X0IWAY uses the same physical layout and interface protocol as M10082040108X0IWAY and M10042040108X0IWAY, enabling density-scaling without PCB redesign.
M10162040108X0IWAY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- RAM
- Technology:
- MRAM (Magnetoresistive RAM)
- Memory Size:
- 16Mbit
- Memory Organization:
- 4M x 4
- Memory Interface:
- -
- Clock Frequency:
- 108 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.71V ~ 2V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
M10162040108X0IWAY FAQ
1.How can I place an order for M10162040108X0IWAY through Aetrix?
Please submit a Request for Quotation (RFQ) for M10162040108X0IWAY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for M10162040108X0IWAY reliable?
The price and inventory of M10162040108X0IWAY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for M10162040108X0IWAY is usually 5 days.
3.What payment methods are accepted for M10162040108X0IWAY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for M10162040108X0IWAY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for M10162040108X0IWAY?
M10162040108X0IWAY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your M10162040108X0IWAY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for M10162040108X0IWAY?
For technical support, including M10162040108X0IWAY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your M10162040108X0IWAY requirements.
6.How does Aetrix verify that M10162040108X0IWAY is sourced from the original manufacturer or authorized distributors?
All M10162040108X0IWAY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that M10162040108X0IWAY meets industry standards.
7.What is the process for return or replacement of M10162040108X0IWAY?
All M10162040108X0IWAY units undergo pre-shipment inspection (PSI). If there is an issue with M10162040108X0IWAY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The M10162040108X0IWAY part is unused and in its original packaging.
Return procedure for M10162040108X0IWAY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
M10162040108X0IWAY Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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