Renesas M10162040108X0PSAY

Overview

M10162040108X0PSAY from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock rate, 1.71–2.0V or 2.7–3.6V supply, and industrial-plus (−40°C to +105°C) operation in 8-pad DFN (WSON) package. It serves as persistent SRAM replacement in real-time data logging and firmware storage.

For engineers reviewing the M10162040108X0PSAY datasheet, M10162040108X0PSAY pinout, M10162040108X0PSAY application, or M10162040108X0PSAY equivalent, key selection criteria include QSPI x4 timing compliance, hardware/software write protection, 256-byte augmented storage array, JEDEC reset support, and deep power-down latency.

Technical Context

The M10162040108X0PSAY implements a 40nm pMTJ spin-transfer torque MRAM array with true random access, enabling byte-level reads/writes without erase cycles. Its SPI controller supports QPI (4-4-4), SDR (108MHz), and DDR (54MHz) modes with configurable clock polarity/phase (Mode 0 or Mode 3).

It integrates dual protection mechanisms: hardware write protect via WP# pin and software-configurable block protection using Status Register BPSEL bits and TBSEL. The device also features eXecute-In-Place (XIP) mode to reduce command overhead during sequential accesses.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0 mm × 6.0 mm, exposed pad, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar non-volatile serial memory applications.

Compared with FM25V10-G and CY14B108N-ZSP25XI, the M10162040108X0PSAY delivers 2× higher density, extended temperature operation, QSPI scalability, and true MRAM endurance-making it optimal for next-generation industrial and medical edge devices requiring future-proof, high-reliability non-volatile memory.

Availability

M10162040108X0PSAY is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and RoHS/REACH compliance.

Supply support for M10162040108X0PSAY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.

The Mxxxx204 family is designed as persistent SRAM (P-SRAM) replacements targeting high-reliability, low-power, and latency-critical applications where Flash endurance or battery-backed SRAM limitations are unacceptable.

FAQ

What is the primary memory technology used in the M10162040108X0PSAY?

The M10162040108X0PSAY uses spin-transfer torque magnetoresistive RAM (STT-MRAM) built on a 40nm pMTJ process. This technology provides true random access, non-volatility, SRAM-compatible timing, and virtually unlimited endurance - distinguishing it from Flash, EEPROM, or battery-backed SRAM. The M10162040108X0PSAY leverages this to deliver persistent storage without erase cycles or wear leveling.

Does the M10162040108X0PSAY support both 1.8V and 3.3V operation?

Yes, the M10162040108X0PSAY supports dual voltage operation: 1.71–2.00V (1.8V nominal) and 2.70–3.60V (3.3V nominal). The specific variant M10162040108X0PSAY is configured for 1.8V operation, as indicated by the "1" in the voltage code position of its ordering string. This allows seamless integration into mixed-voltage systems without level-shifting circuitry.

What package type does the M10162040108X0PSAY use, and is it RoHS compliant?

The M10162040108X0PSAY uses an 8-pad DFN (WSON) package measuring 5.0 mm × 6.0 mm with an exposed thermal pad. It is fully RoHS and REACH compliant, as confirmed in the official datasheet. The "Y" suffix in the part number denotes tray packaging, and the "WA" package code explicitly identifies the WSON variant.

How does the M10162040108X0PSAY implement data protection?

The M10162040108X0PSAY implements dual-layer data protection: hardware-based via the WP# pin (active-low, requires WP#EN bit set in Status Register), and software-based via configurable block protection (BPSEL[2:0]) and top/bottom selection (TBSEL). Both mechanisms prevent unintended writes to memory or registers, and the 256-byte augmented storage array can be independently write-protected per 32-byte section.

What is the significance of the "0108" and "0P" codes in M10162040108X0PSAY?

In M10162040108X0PSAY, "0108" indicates 108MHz Single Data Rate (SDR) SPI performance, and "0P" specifies the industrial-plus temperature grade (−40°C to +105°C). The "WA" package code (embedded in base part M1016204) confirms the 8-pad DFN (WSON) form factor, while "Y" denotes tray packing. These codes collectively define the full electrical, thermal, mechanical, and logistical configuration of the M10162040108X0PSAY.