Renesas M10162040108X0PWAR

Overview

M10162040108X0PWAR from Renesas is a 16Mbit serial STT-MRAM non-volatile memory IC with QSPI interface, 108MHz SDR clock speed, 1.71–2.0V supply voltage, industrial-plus temperature range (−40°C to +105°C), and 8-pad DFN (WSON) package - deployed in real-time industrial control systems requiring instant-write persistence and zero-latency read/write.

For engineers reviewing the M10162040108X0PWAR datasheet, M10162040108X0PWAR pinout, M10162040108X0PWAR application, or M10162040108X0PWAR equivalent, key selection criteria include its persistent SRAM timing compatibility, hardware/software write protection, 256-byte augmented storage array, JEDEC reset support, and dual low-power states (Deep Power Down & Hibernate).

Technical Context

The M10162040108X0PWAR implements a 40nm pMTJ spin-transfer torque MRAM array with true random-access behavior, supporting Quad SPI (4-4-4) and Single Data Rate mode at 108MHz. Its architecture includes dedicated command/control logic, row/column decoders, and a high-voltage generator for write operations - enabling XIP (eXecute-In-Place) to eliminate per-access command overhead.

It integrates dual data protection: hardware-based via WP# pin (active-low, no internal pull-up), and software-based via configurable status register bits (BPSEL[2:0], TBSEL, SNPEN). The device features two independent low-power modes - Deep Power Down (IDPD, 3µs entry, 400µs exit) and Hibernate (IHBN, 3µs entry, 450µs exit) - both preserving data and configuration without external refresh.

Key Specifications

Pinout & Package

Package: 8-pad DFN (WSON), 5.0mm × 6.0mm, exposed pad, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial non-volatile memory applications.

Compared with FM25V10-G and W25Q16JW-QI, the M10162040108X0PWAR uniquely delivers 16Mbit density with SRAM-like random write performance, 108MHz QSPI throughput, and industrial-plus temperature rating - making it the sole option for real-time, high-cycle, high-reliability embedded memory in extended-temperature environments.

Availability

M10162040108X0PWAR is available at Aetrix Electronics and suitable for factory automation, medical diagnostics, and industrial control applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for M10162040108X0PWAR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The M10162040108X0PWAR belongs to Renesas' Persistent SRAM (P-SRAM) family - engineered specifically to replace battery-backed SRAM and legacy NOR/NAND flash in applications demanding instant-write non-volatility, high endurance, and deterministic timing.

FAQ

What is the operating voltage range for M10162040108X0PWAR?

The M10162040108X0PWAR operates exclusively within 1.71V to 2.00V. This 1.8V nominal supply eliminates level-shifting requirements in modern low-voltage microcontroller designs and ensures stable MRAM cell switching margins across the full −40°C to +105°C temperature range. Operation outside this window is not supported and may cause data corruption or functional failure.

Does M10162040108X0PWAR support execute-in-place (XIP) functionality?

Yes, the M10162040108X0PWAR supports eXecute-In-Place (XIP) mode, allowing sequential instruction execution directly from memory without repeated command loading. Activation requires sending a specific XIP byte (Axh/Fxh) after the address. This feature reduces random access latency by up to 40% compared to standard SPI read sequences and is fully supported in all QSPI configurations.

How is data protected against unintended writes in M10162040108X0PWAR?

The M10162040108X0PWAR implements dual-layer protection: hardware-based via the WP# pin (active-low, requires external pull-down to enable) and software-based via status register bits (WP#EN, BPSEL[2:0], TBSEL). Both mechanisms can be used simultaneously - for example, WP# can guard the status register while BPSEL locks specific memory blocks - ensuring robust defense against firmware bugs or ESD-induced glitches.

What are the low-power modes supported by M10162040108X0PWAR?

The M10162040108X0PWAR supports two ultra-low-power states: Deep Power Down (IDPD) and Hibernate (IHBN). Both preserve all memory contents and register configurations. IDPD achieves sub-µA quiescent current with 400µs wake-up; IHBN offers faster 450µs recovery while maintaining higher internal bias - selected via dedicated JEDEC commands (B9h/BAh and ABh/ABh respectively).

Is the 256-byte Augmented Storage Array in M10162040108X0PWAR independently protected?

Yes, the 256-byte Augmented Storage Array in the M10162040108X0PWAR is physically and logically separate from the main 16Mbit array. It is divided into eight 32-byte sections, each individually programmable and protectable via the Augmented Storage Array Protection Register. This enables secure storage of calibration data, serial numbers, or cryptographic keys without risking main memory integrity.